Power type GaN base Schottky diode and manufacture method thereof
A Schottky diode, power type technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of small size and high cost of GaN self-supporting substrates, improve heat dissipation characteristics, and reduce heat dissipation design requirements , the effect of good thermal conductivity
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Embodiment 1
[0045] Such as figure 1 As shown, this embodiment shows the structure of a GaN-based Schottky diode with an upper and lower electrode structure in the present invention, which includes: a metal substrate 11 and a semiconductor epitaxial stack connected through the metal substrate 11, the semiconductor epitaxial stack The layer consists of an outward-facing metal substrate 11, which in turn includes an N-type GaN layer 3, a low-doped GaN layer 4, and a Schottky metal layer 10; the GaN-based Schottky diode has an upper and lower electrode structure, and the metal substrate 11 and Schottky The base metal layer 10 together serves as the anode of the Schottky diode; a metal electrode is provided under the N-type GaN layer 3 as the cathode. A buffer layer 2 is provided between the N-type GaN layer 3 and the metal electrode, and the metal electrode passes through the buffer layer 2 as a cathode.
[0046] A cylindrical hole 5 and a small cylindrical hole 6 are provided in the low-doped ...
Embodiment 2
[0049] Such as figure 2 Shown is a schematic diagram of the second structure of a GaN-based Schottky diode with a conductive structure of upper and lower electrodes of the present invention. The structure in this embodiment is basically the same as that in Embodiment 1, except that when the substrate is wet etched After Si, a metal layer 12 is deposited on the lower surface of the buffer layer 2 through an evaporation process, which forms a good ohmic contact with the conductive material 7, and together serves as the cathode of the Schottky diode, which is conducive to current conduction , And parallel packaging of devices.
Embodiment 3
[0051] Such as image 3 As shown, it is a schematic diagram of the third structure of a GaN-based Schottky diode with a conductive structure of upper and lower electrodes of the present invention. The structure in this embodiment is basically the same as that in Embodiment 1. The semiconductor epitaxial stack is sequentially comprised of the outer metal substrate 11 N-type GaN layer 3, low-doped GaN layer 4, and Schottky metal layer 10. The difference is that when the substrate Si1 is wet-etched, the stress buffer layer 2 is etched away by dry etching technology, and then a metal layer 12 is plated on the bottom surface through an evaporation process, and the N-type GaN Layer 3 forms a good ohmic contact and together serves as the cathode of the Schottky diode. This structure has a simple process, no through-hole structure is needed, and the process is simplified.
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