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Sample preparation method for measuring impurity element in high-purity arsenic by ICP-MS method

A technology of ICP-MS and impurity elements, applied in the field of sample preparation for detection of high-purity arsenic, which can solve the problems of cumbersome sample preparation and incomplete detection of impurity elements

Active Publication Date: 2011-05-25
洛宁中天利新材料有限公司
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AI Technical Summary

Problems solved by technology

The above methods are cumbersome to prepare samples, and the detection of impurity elements is incomplete

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0007] (1) Temperature adjustment: adjust the temperature of the heating furnace to 300-350°C in advance (the heating furnace is controlled by a program-controlled meter).

[0008] (2) Weighing: Weigh 5-10g of high-purity arsenic, and record the mass m 高纯砷 , and then put all the weighed high-purity arsenic into a quartz crucible.

[0009] (3) Furnace loading: Put the quartz crucible into the quartz tube, then put the quartz tube into the heating furnace with adjusted temperature, and seal and keep warm at the gap between the furnace mouth and the quartz tube.

[0010] (4) Ventilate and exhaust arsenic (eliminate matrix A s Interference): Use a silicone plastic hose at the gas outlet of the quartz tube to introduce a glass container containing an aqueous solution (the plastic hose is inserted 5mm below the water surface), and oxygen is introduced into the inlet of the quartz tube. According to the vapor pressure difference, the matrix element As The compound As 2 o 3 Due to...

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Abstract

The invention discloses a sample preparation method for measuring an impurity element in high-purity arsenic by an inductively coupled plasma-mass spectrometry (ICP-MS) method, and relates to the technical field of material analysis. The method comprises the following steps of: putting the high-purity arsenic into a special container; introducing oxygen at a certain temperature to form arsenic trioxide and sublimating to remove the arsenic; remaining the impurity element with low steam pressure in the container; resolving the remaining solution through electronic-grade nitric acid; and fixing the volume by using dilute nitric acid. By the method, the interference to the matrix element arsenic can be completely eliminated. Compared with glow discharge-mass spectrometry (GD-MS) detection data, the detection data of a sample prepared by the ICP-MS method has the characteristics of high precision and high accuracy, and is practical and feasible.

Description

technical field [0001] The invention relates to the technical field of material analysis, in particular to a sample preparation method for detecting high-purity arsenic by ICP-MS. Background technique [0002] High-purity arsenic, as a third-generation semiconductor material, is known for its superior physical and chemical properties. By doping in silicon materials and compounding gallium arsenide and other forms. It has broken through the limitations of silicon materials, such as limited information capacity, limited computing speed, large energy consumption, large capacity, and unsatisfactory brightness and color. It has been widely used in information communication optoelectronics, large-scale integrated circuits, high-definition bright large-screen displays, Remote sensing, detection, far infrared, automatic control, intelligence, vulcanized optical fiber, alloy materials, medical and medical equipment, aerospace equipment, aerospace, military equipment and other indust...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N1/28G01N27/62G01N27/626
Inventor 李显坪王继荣陈琦杨华琴何卫卫
Owner 洛宁中天利新材料有限公司
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