Gallium nitride (GaN) enhancement type metal insulator semiconductor field effect transistor (MISFET) device and manufacturing method thereof

Abstract

The invention relates to a gallium nitride (GaN) enhancement type metal insulator semiconductor field effect transistor (MISFET) device and a manufacturing method thereof. The GaN enhancement type MISFET device comprises a substrate and an epitaxial layer arranged on the substrate, wherein the epitaxial layer comprises a stress buffer layer and a GaN layer sequentially from bottom to top; a heterogeneous layer selectively grows on the GaN layer; insulating medium layers are formed on the surface, where the heterogeneous layer does not grow, of the GaN layer and the surface of the heterogeneous layer; a grid region is arranged on the insulating medium layer formed on the surface of the GaN layer; the insulating medium layer formed on the surface of the heterogeneous layer is etched to form a source region and a drain region; grid metals are formed in the grid region; and ohmic contact metals are formed on the source region and the drain region. The GaN enhancement type MISFET device and the manufacturing method thereof have the characteristics that: a heterogeneous structure with high-concentration two-dimensional electron gas grows in an access region by a selected region epitaxial technique, so that the conducting channel plane of the grid can naturally align with that of the source and the drain, the resistance of the access region can be effectively reduced, and the threshold voltage of the grid of the device can be increased.

Description

technical field [0001] The invention relates to a GaN enhanced MISFET device and a preparation method thereof, in particular to a GaN enhanced MISFET device used in high temperature and high power switching devices and microwave devices and a preparation method thereof. Background technique [0002] The wide bandgap semiconductor material represented by GaN has excellent material properties such as wide bandgap, high breakdown electric field strength, high thermal conductivity, high saturation electron drift velocity, and high concentration of two-dimensional electron gas at the heterogeneous interface; it has become the third research hotspots in semiconductors. These characteristics make GaN have great advantages and application prospects in the manufacture of high-power electronic devices. [0003] The study of enhanced (normally off) HEMT is of great significance to the practical application of GaN electronic devices. The gate of the enhanced device can close the chann...

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Problems solved by technology

However, the current GaN-based MISFET based on the traditional MISFET structure has a small conduction current, which is not conducive to the realization of high-power characteristics; The etching process, and the damage caused by the etching process to the material affects the performance of the device. After etching, the alignment of the conductive channel plane under the gate and the source-drain conductive channel plane cannot be accurately controlled, which increases the on-resistance of the device and the current density. Low

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