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Metallization processing method of three-dimensional quartz-sensitive structure

A sensitive structure and processing method technology, applied in the manufacture/assembly of piezoelectric/electrostrictive devices, electrical components, piezoelectric/electrostrictive/magnetostrictive devices, etc., can solve the problem of shielding plate thickness, corrosion, Inapplicable and other problems, to achieve the effect of meeting the design requirements, good ohmic contact, and small contact resistance

Active Publication Date: 2013-01-02
BEIJING AUTOMATION CONTROL EQUIP INST
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  • Application Information

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Problems solved by technology

[0013] The above two schemes can process surface electrodes, but there are the following disadvantages in processing high-precision surface electrodes: (1) The photolithography and etching method mentioned in the above-mentioned Japanese patent requires uniform glue on the processed three-dimensional structure, The process is complicated and it is difficult to ensure the uniformity of the thickness of the photoresist, which will seriously affect the precision of the photolithography, and then affect the dimensional accuracy of the surface electrode; (2) the mask evaporation method mentioned in the above Chinese patent, due to the processing accuracy of the shield There are shadows on the edge of the surface electrode plated at the same time, which will affect the dimensional accuracy of the surface electrode; (3) the side electrodes processed by the above two schemes are of single polarity and distributed on the corresponding entire side surface, which is not suitable for the requirements of the present invention. Machining of side electrodes with different polarities and high dimensional accuracy requirements
If the diameter of the evaporation source is too large, it is easy to cause shadows on the edge of the side electrodes, so that short circuits between side electrodes of different polarities are easy
[0015] The above two schemes can process surface electrodes with unequal height structures, but the processing of surface electrodes with unequal height structures requires the following deficiencies in the present invention: (1) The photolithography and corrosion method mentioned in the above-mentioned Japanese patent can not be processed in the structure of unequal heights. Near the edge (near the boundary between the unequal height structure and the beam surface), sometimes due to the poor coverage of the steps of the photoresist, the metal film will be directly exposed to the metal corrosion solution and then corroded, so the unequal height surface electrode The electrodes on the surface of the beam are easily disconnected; (2) The above-mentioned Chinese patent proposes the use of a mask evaporation method, because the shielding plate processed by the traditional machining method is too thick, so it is easy to cause gaps between the surface electrodes of different heights during the evaporation process. easy break

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  • Metallization processing method of three-dimensional quartz-sensitive structure
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  • Metallization processing method of three-dimensional quartz-sensitive structure

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Embodiment Construction

[0044] A metallization processing method for a three-dimensional quartz sensitive structure, comprising the steps of:

[0045] Step 1: Machining Surface Electrodes

[0046] The invention adopts the method of simultaneously processing the electrode structure and the three-dimensional sensitive structure to process the surface electrode with high dimensional accuracy.

[0047] First, chromium (Cr) / gold (Au) / chromium (Cr) / gold (Au) thin films are sequentially plated on the upper and lower surfaces of the quartz wafer by thermal evaporation or magnetron coating. Chromium gold plating is used as a mask for the corrosion process, and chrome plating is because the effect of electroplating gold directly on the quartz surface is not good, and the effect of electroplating gold after adding a chromium layer will be much better, and the adhesion of gold (Au) film to quartz is not good. Well, a transition layer of chrome (Cr) needs to be added between the two. The coating is carried out ...

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Abstract

The invention belongs to the field of processing methods and specifically relates to a metallization processing method of a three-dimensional quartz-sensitive structure. The metallization processing method of the three-dimensional quartz-sensitive structure is characterized by comprising the following steps: step 1: processing a surface electrode; and step 2: processing side electrodes and the surface electrode in a non-equal height structure. The metallization processing method has the following significant effects: (1) realizing the processing of three types of combined electrodes, including the surface electrode, the side electrodes and the surface electrode in the non-equal height structure; (2) enabling the dimensional precision of the surface electrode to be high and be controlled within plus or minus 1 mu m, simultaneously being good in compatibility with other processes and being easy to process; (3) being applied in batch production of quartz micro-devices; and (4) processingthe side electrodes with different polarities on the same side surface.

Description

technical field [0001] The invention belongs to a processing method, in particular to a metallization processing method of a three-dimensional quartz sensitive structure. Background technique [0002] Quartz crystal is an important piezoelectric material, which has been widely used in communication, inertial navigation, automatic control, electronic watch and other fields. The basic working principle of piezoelectric quartz devices is based on the piezoelectric effect of quartz crystals, so it is necessary to metallize each surface of the quartz sensitive structure to apply or obtain electrical signals of different polarities. In quartz micro-inertial devices, the sensitive structure usually has a three-dimensional structure, and it is necessary to deposit metal thin films on all sides of the three-dimensional structure to form electrodes (usually composed of a base electrode layer of chromium (Cr) and an upper electrode layer of gold (Au). film). [0003] Next, the struct...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L41/22H10N30/01H10N30/067
Inventor 盛洁杨军唐琼刘大俊廖兴才刘迎春姜福灏李佳朱建伟车一卓杨轶博
Owner BEIJING AUTOMATION CONTROL EQUIP INST