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Crucibleless growth method of sapphire crystals in different atmospheres

A sapphire crystal, crucible-free technology, applied in the directions of single crystal growth, crystal growth, single crystal growth, etc., to achieve the effects of simple operation of growth equipment, low energy consumption, and elimination of potential pollution

Inactive Publication Date: 2012-08-15
BEIJING UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technology of artificially growing sapphire crystals rapidly and reducing production costs is still a challenge

Method used

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  • Crucibleless growth method of sapphire crystals in different atmospheres
  • Crucibleless growth method of sapphire crystals in different atmospheres

Examples

Experimental program
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Effect test

Embodiment 1

[0028] (1) Ingredients and bar preparation: the high-purity raw material Al 2 o 3 , FeTiO 3 and Fe 2 o 3 , according to mass percentage 98.6%wtAl 2 o 3 +0.8%wtFe 2 o 3 +0.6wt% FeTiO 3 Mixing, and then mechanical mixing; after drying, put the mixture into rubber balloons and place it under isostatic pressure to make green bars. Put it into a high-temperature sintering furnace with a sintering temperature of 1350°C and a sintering time of 6 hours to obtain a polycrystalline rod;

[0029] (2) Fixing of the material rod and its seed crystal: the polycrystalline rod is put into the crystal growth furnace, the material rod is fixed on the upper part of the central axis of crystal growth, the polycrystalline rod seed crystal is fixed on the lower part of the crystal growth central axis, and then Cover the quartz tube to prevent external gas from entering;

[0030] (3) Atmosphere introduction: pass the oxygen atmosphere required for crystal growth into the quartz tube, adjus...

Embodiment 2

[0035] (1) Ingredients and bar preparation: the high-purity raw material Al 2 o 3 , FeTiO 3 and Fe 2 o 3 , according to mass percentage 98.6%wtAl 2 o 3 +0.8%wtFe 2 o 3 +0.6wt% FeTiO 3 Mixing, and then mechanical mixing; after drying, put the mixture into rubber balloons and place it under isostatic pressure to make green bars. Put it into a high-temperature sintering furnace with a sintering temperature of 1450°C and a sintering time of 10 hours to obtain a polycrystalline rod;

[0036] (2) Fixing of the material rod and its seed crystal: the polycrystalline rod is put into the crystal growth furnace, the material rod is fixed on the upper part of the central axis of crystal growth, the polycrystalline rod seed crystal is fixed on the lower part of the crystal growth central axis, and then Cover the quartz tube to prevent external gas from entering;

[0037] (3) Atmosphere introduction: Introduce the argon atmosphere required for crystal growth into the quartz tube, ...

Embodiment 3

[0042] (1) Ingredients and bar preparation: the high-purity raw material Al 2 o 3 , FeTiO 3 and Fe 2 o 3 , according to mass percentage 98.6%wtAl 2 o 3 +0.6%wtFe 2 o 3 +0.8wt% FeTiO 3 Mixing, and then mechanical mixing; after drying, put the mixture into rubber balloons and place it under isostatic pressure to make green bars. Put it into a high-temperature sintering furnace with a sintering temperature of 1550°C and a sintering time of 12 hours to obtain a polycrystalline rod;

[0043] (2) Fixing of the material rod and its seed crystal: the polycrystalline rod is put into the crystal growth furnace, the material rod is fixed on the upper part of the central axis of crystal growth, the polycrystalline rod seed crystal is fixed on the lower part of the crystal growth central axis, and then Cover the quartz tube to prevent external gas from entering;

[0044] (3) Atmosphere introduction: pass the oxygen atmosphere required for crystal growth into the quartz tube, adju...

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Abstract

The invention discloses a crucibleless growth method of sapphire crystals in different atmospheres, and belongs to the field of sapphire crystal growth. The method comprises the following steps: a polycrystalline rod is prepared by using high-purity raw materials of Al2O3, FeTiO3 and Fe2O3; the polycrystalline rod is put into a crystal growth furnace, and is sleeved by a quartz tube; oxygen gas or argon gas is led to the quartz tube, and a gas valve is closed when the pressure reaches a certain value; the temperature rises for 0.5 to 1 hour until the material rod and seed crystals are melted;a crystal growth speed is set for crystal growth; the grown crystals are cooled to reach the room temperature; and the gas valve is opened, and the gas is released to the normal atmospheric pressure.The sapphire crystals grown through the method have large sizes, evener color and better quality, and avoid macroscopic defects.

Description

technical field [0001] The invention belongs to the field of sapphire crystal growth and relates to a method for growing sapphire crystals without a crucible under different atmospheres. technical background [0002] Crystal materials play a very important role in the development of science and technology. They are the important cornerstone of the information age and the material basis for the development of high technology. The main single crystal preparation techniques mainly include: melt growth, solution growth, vapor phase growth, and solid phase growth. As a new type of crucible-free crystal growth method, the crucible-free growth method has the advantages of no need for a crucible, less pollution, and fast growth rate. Great advantage. [0003] Sapphire is α-phase alumina, which is the oxide crystal material with the highest hardness known so far. The Mohs hardness is 9, and it can still maintain high hardness at high temperatures. It has good thermal conductivity, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B27/00C30B29/20
Inventor 蒋毅坚徐宏范修军王越
Owner BEIJING UNIV OF TECH
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