Three-axis capacitive micro accelerometer based on silicon on insulator (SOI) process and micropackage technology

An accelerometer and acceleration technology, applied in the direction of microstructure technology, measurement acceleration, multi-dimensional acceleration measurement, etc., to achieve the effects of shortening the processing cycle, solving packaging problems, and fast speed

Inactive Publication Date: 2011-08-17
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Abstract
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Problems solved by technology

On this basis, the three-axis acceleration test structure can be integrated through mi

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  • Three-axis capacitive micro accelerometer based on silicon on insulator (SOI) process and micropackage technology
  • Three-axis capacitive micro accelerometer based on silicon on insulator (SOI) process and micropackage technology
  • Three-axis capacitive micro accelerometer based on silicon on insulator (SOI) process and micropackage technology

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[0014] The technical solution of the present invention will be described in further detail below with reference to the drawings and specific embodiments.

[0015] like figure 1 As shown, the present invention comprises: lower substrate 12, upper substrate 13 (for convenience of observation, the upper substrate omits its encapsulation cover, is a partial sectional view), each substrate is divided into an inner layer structure and an outer layer structure, and the groove 1 is located between the inner structure and the outer structure. In the upper substrate 13 , the Z-axis mass block 6 suspended in the groove 1 is anchored to the anchor points 11 at the four corners of the outer structure through four flexible beams 5 . The Z-axis movable plate 7 protrudes outward from the four sides of the Z-axis mass block 6 . The planar mass 8 is anchored to the anchor point 11 of the inner layer structure of the upper substrate 13 through the return beam 10 . The planar movable plate 9 p...

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Abstract

The invention discloses a three-axis capacitive micro accelerometer, which comprises an SOI substrate, a mass block, a flexible beam, a tooth pivot, a fixed electrode and a movable electrode. The accelerometer has a structure of a central symmetry pattern, and the mass block passing through an XY plane in a Z-axis direction senses the accelerated speed in three orthogonal directions respectively.Due to the design of a beam in the shape like a Chinese character hui on the XY plane and the flexible beam in the Z-axis direction, the sensitivity and resolution of the accelerated speed in three orthogonal directions are improved. In addition, due to the application of the SOI process, the micro accelerometer has the advantages of low parasitic capacitance, low short channel effect, high speed, high integrated level, low power consumption, high temperature resistance, radiation resistance and the like. Finally, the novel method effectively solves the problem of package of microcomponents through the micropackage technology.

Description

technical field [0001] The invention relates to a three-axis capacitive micro-accelerometer, which belongs to the field of micro-electromechanical systems. As a micro-inertial device, it is widely used in high-end fields such as automotive electronics, aerospace, and weaponry. Background technique [0002] The micro-accelerometer has been developed in recent years. Its technology and market are immature, but it has a broad development space and market. The research on micro-accelerometers began in the 1970s, and a single-axis micro-accelerometer was formed in the 1980s, and a two-axis or three-axis micro-accelerometer appeared in the late 1990s. The most common on the market is the ADXL series micro-accelerometer of the American AD company. The main acceleration detection technologies of micro accelerometers include piezoresistive detection, piezoelectric detection, thermal detection, resonance detection, electromagnetic detection, light detection, tunnel current detection...

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Application Information

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IPC IPC(8): G01P15/125G01P15/18B81B3/00
Inventor 徐利梅陈敏朱波杰王金林李安静
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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