Silicon carbide single crystal substrate

Abstract

Provided is a silicon carbide single crystal substrate having adhered particles that cause crystal defects removed therefrom and has high surface cleanliness. A silicon carbide single crystal substrate wherein the density of first adhered particles having an adhesion height of 100 nm or more on one surface of the substrate is one particle / cm2 or less, and the density of second adhered particles having an adhesion height of less than 100 nm on such surface of the substrate is 1500 particles / cm2 or less is used.

Description

technical field [0001] The invention relates to a silicon carbide single crystal substrate, in particular to a silicon carbide single crystal substrate with high surface cleanliness. [0002] This application claims priority based on Patent Application No. 2008-252731 for which it applied in Japan on September 30, 2008, The content is used for this application. Background technique [0003] In recent years, silicon carbide (SiC) single crystal materials have been expected as semiconductor device materials due to their excellent semiconductor characteristics of high power density and low loss. In particular, it is attracting attention as a future power electronic semiconductor device. [0004] A semiconductor device is generally formed by epitaxially growing a plurality of semiconductor layers on one side of a semiconductor substrate. Since the above-mentioned semiconductor layer is a thin film, it is desirable that one side of the above-mentioned semiconductor substrate is...

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Problems solved by technology

[0013] The remaining adhered particles with a size exceeding the optical detection limit, which cannot be detected by conventional methods, may cause abnormal growth during epitaxial growth, etc., and there is still the possibility of causing crystal defects in the above-mentioned thin film.

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