Preparation method of Bi3TiNbO9-Bi4Ti3O12 natural superlattice ferroelectric film on Si substrate

A bi3tinbo9-bi4ti3o12, ferroelectric thin film technology, applied in the field of information functional thin film materials, can solve the problems of unseen natural superlattice ferroelectric thin films, complex process, expensive equipment, etc., and achieve easy large-area film formation and component control Precise, highly uniform results

Inactive Publication Date: 2011-09-14
GUILIN UNIV OF ELECTRONIC TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, these methods are expensive in equipment, complicated in process and high in cost
So far, there has been no report on the preparation of Bi layered perovskite natural superlattice ferroelectric thin films by sol-gel process

Method used

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  • Preparation method of Bi3TiNbO9-Bi4Ti3O12 natural superlattice ferroelectric film on Si substrate
  • Preparation method of Bi3TiNbO9-Bi4Ti3O12 natural superlattice ferroelectric film on Si substrate
  • Preparation method of Bi3TiNbO9-Bi4Ti3O12 natural superlattice ferroelectric film on Si substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0042] (1) Select a p-type single crystal Si substrate with a resistivity of 3Ω cm and a (100) crystal orientation as the substrate, and perform surface treatment and cleaning according to the requirements of the semiconductor plane process;

[0043] (2) adopt the following raw materials (its purity is analytically pure 99.99%) to prepare Bi 3 TiNbO 9 -Bi 4 Ti 3 o 12 Sol:

[0044]

[0045] Among them: (a) bismuth nitrate (Bi(NO 3 ) 3 ·5H 2 O), niobium ethoxide (Nb(OC 2 h 5 ) 5 ), butyl titanate (C 16 h 36 o 4 The molar ratio of Ti) is 7.35: 1.00: 4.00; (b) solvent ethylene glycol methyl ether (C 3 h 8 o 2 ), catalyst glacial acetic acid (CH 3 COOH) and stabilizer acetylacetone (CH 3 COCH 2 COCH 3 ) are respectively 35.00%: 12.00%: 46.20% by volume; (c) 6.17 moles (a) solute raw material (which contains: 3.67 moles of bismuth nitrate, 0.50 moles of niobium ethoxide, 2.00 moles of butyl titanate) with 93.20ml ( b) Solvent, catalyst, stabilizer raw material...

Embodiment 2

[0064] Embodiment 2: (the purity of each raw material is required to be more than 99.99% of analytical purity)

[0065] (1) Use a resistivity of 5 Ω cm, (100) crystal orientation p-type single crystal Si substrate as the substrate, and perform surface treatment and cleaning according to the requirements of the semiconductor plane process;

[0066] (2) adopt the following raw materials (its purity is analytically pure 99.99%) to prepare Bi 3 TiNbO 9 -Bi 4 Ti 3 o 12 Sol:

[0067]

[0068] Among them: (a) bismuth nitrate (Bi(NO 3 ) 3 ·5H 2 O), niobium ethoxide (Nb(OC 2 h 5 ) 5 ), butyl titanate (C 16 h 36 o 4 The molar ratio of Ti) is 7.28: 1.00: 4.00; (b) solvent ethylene glycol methyl ether (C 3 h 8 o 2 ), catalyst glacial acetic acid (CH 3 COOH) and stabilizer acetylacetone (CH 3 COCH 2 COCH 3 ) are respectively 45.00%: 18.00%: 30.20% by volume; (c) 6.14 moles of (a) solute raw material (which contains: 3.64 moles of bismuth nitrate, 0.50 moles of niobiu...

Embodiment 3

[0075] Embodiment 3: (each raw material purity all requires to be more than 99.99% of analytical purity)

[0076] (1) The resistivity is 10Ω·cm, and the (100) crystal orientation p-type single crystal Si substrate is used as the substrate, and the surface is treated and cleaned according to the requirements of the semiconductor planar process;

[0077] (2) adopt the following raw materials (its purity is analytically pure 99.99%) to prepare Bi 3 TiNbO 9 -Bi 4 Ti 3 o 12 Sol:

[0078]

[0079] Among them: (a) bismuth nitrate (Bi(NO 3 ) 3 ·5H 2 O), niobium ethoxide (Nb(OC 2 h 5 ) 5 ), butyl titanate (C 16 h 36 o 4 The molar ratio of Ti) is 7.21: 1.00: 4.00; (b) solvent ethylene glycol methyl ether (C 3 h 8 o 2 ), catalyst glacial acetic acid (CH 3 COOH) and stabilizer acetylacetone (CH 3 COCH 2 COCH 3 ) are respectively 55.00%: 18.00%: 20.20% by volume; (c) 6.10 moles of (a) solute raw material (which contains: 3.60 moles of bismuth nitrate, 0.50 moles of n...

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Abstract

The invention discloses a preparation method of a Bi3TiNbO9-Bi4Ti3O12 natural superlattice ferroelectric film on an Si substrate. A sol-gel technique is adopted to directly form a natural superlattice structure; in order to overcome the defect that Bi2O3 is volatile at high temperature, a composition formula of moderately excessive Bi is adopted on the basis of the nominal composition of the Bi3TiNbO9-Bi4Ti3O12; multiple spin coating and layer-by-layer annealing are adopted; and film-forming annealing is carried out in an oxygen atmosphere. The method is simple and can satisfy the requirements for the silicon planar technique; and the prepared Bi3TiNbO9-Bi4Ti3O12 ferroelectric film has a superlattice structure, and has the advantages of outstanding ferroelectric properties, excellent antifatigue characteristic and favorable comprehensive properties.

Description

Technical field: [0001] The invention belongs to the field of information functional thin film materials, in particular to a Si substrate Bi 3 TiNbO 9 -Bi 4 Ti 3 o 12 Preparation method of natural superlattice ferroelectric thin film. Background technique: [0002] Ferroelectric crystals belong to a subfamily of dielectric crystals, piezoelectric crystals and pyroelectric crystals, so ferroelectric crystals must have dielectric, piezoelectric and pyroelectric properties in addition to ferroelectricity, and light-transmitting ferroelectrics also have With electro-optical properties. Due to the special dielectric, electro-optic, acousto-optic, photorefractive, nonlinear optics, pyroelectric and piezoelectric properties of ferroelectrics, it is a material with great commercial application prospects, so the application of ferroelectrics has been very early. It has attracted the attention of the physics and materials science circles. Since the 1970s, due to the in-depth un...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B41/50
Inventor 王华许积文周尚菊杨玲任明放
Owner GUILIN UNIV OF ELECTRONIC TECH
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