Method for preparing sulfur-doped graphene films

A technology of sulfur-doped graphene and thin films, applied in chemical instruments and methods, gaseous chemical plating, crystal growth and other directions, to achieve the effects of simple and feasible preparation process, stable product quality, and convenience for large-scale production

Inactive Publication Date: 2011-09-21
LANZHOU UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There are relatively few studies on other element doping...

Method used

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  • Method for preparing sulfur-doped graphene films
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  • Method for preparing sulfur-doped graphene films

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Effect test

Embodiment 1

[0021] In the first step, hexane and sulfur powder are mixed, and the mixed liquid is treated under ultrasonic waves for about 20 minutes to form a uniform and transparent solution. Wherein the consumption of hexane is 50ml, and the sulfur powder is 1mg.

[0022] In the second step, the metal copper substrate is placed in the center of the quartz tube, and the entire chemical vapor deposition (CVD) system is evacuated to 10 -3 torr, into the reducing protective atmosphere H 2 Mix gas with Ar (volume ratio 1:5) until the pressure in the system reaches 10-11 torr (gas flow rate is about 400 sccm); heat the metal substrate at 500°C for about 30 minutes.

[0023] In the third step, when the temperature of the center of the electric furnace reaches 950°C, stop introducing the reducing protective atmosphere, and make the vacuum degree in the furnace reach 10°C. -3 torr, introduce the mixed liquid precursor of hexane and sulfur powder into the reaction system, control its feed rate...

Embodiment 2

[0028] In the first step, hexane and sulfur powder are mixed, and the mixed liquid is treated under ultrasonic waves for about 20 minutes to form a uniform and transparent solution. Wherein the consumption of hexane is 50ml, and the sulfur powder is 1mg.

[0029] In the second step, the metal copper substrate is placed in the center of the quartz tube, and the entire chemical vapor deposition system is evacuated to 10 -3 torr, into the reducing protective atmosphere H 2 Mix gas with Ar (1:5) until the pressure in the system reaches 10-11 torr (the gas flow rate is about 400 sccm); raise the temperature to 500° C. and heat-treat the metal substrate for about 30 minutes.

[0030] In the third step, when the temperature of the center of the electric furnace reaches 950°C, stop introducing the reducing protective atmosphere, and make the vacuum degree in the furnace reach 10°C. -3 torr, introduce the mixed liquid precursor of hexane and sulfur powder into the reaction system, co...

Embodiment 3

[0035] In the first step, hexane and sulfur powder are mixed, and the mixed liquid is treated under ultrasonic waves for about 20 minutes to form a uniform and transparent solution. Wherein the hexane consumption is 50ml, and the sulfur powder is 1.5mg.

[0036] In the second step, the metal copper substrate is placed in the center of the quartz tube, and the entire chemical vapor deposition system is evacuated to 10 -3 torr, into the reducing protective atmosphere H 2 Mix gas with Ar (1:5) until the pressure in the system reaches 10-11 torr (the gas flow rate is about 400 sccm); raise the temperature to 500° C. and heat-treat the metal substrate for about 30 minutes.

[0037] In the third step, when the temperature of the center of the electric furnace reaches 950°C, stop introducing the reducing protective atmosphere, and make the vacuum degree in the furnace reach 10°C. -3 torr, introduce the mixed liquid precursor of hexane and sulfur powder into the reaction system, con...

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Abstract

The invention relates to a method for preparing sulfur-doped graphene films. The sulfur-doped graphene films are prepared with chemical vapor deposition. The method comprises the following steps: a metal substrate is put in a reactor and preheated in heating and reduction protective atmosphere, then the metal substrate is heated to 900-1000 DEG C, the reduction protective gas is stopped to blow in the reactor, the vacuum degree of the reactor reaches 10-2 Torr to 10-3 Torr, then mixed liquid carbon source and sulfur source are introduced into the reactor in gas state, the required sulfur-doped grapheme films are grown on the metal substrate, a post-treatment is carried out, and the sulfur-doped graphene films are transferred to a substrate material.

Description

technical field [0001] The invention relates to a preparation method of a graphene film, in particular to a preparation method of a sulfur-doped graphene film. Background technique [0002] Graphene is a kind of carbon atom separated from graphite in 2004 by two physicists Andre Geim and Konstantin Novoselov of the University of Manchester, UK. 2 The hybrid orbitals form a two-dimensional crystal material with a hexagonal grid structure. The two also shared the 2010 Nobel Prize in Physics for their pioneering experiments. Studies have shown that graphene has excellent properties, such as high electron mobility, good thermal conductivity, light transmission and good stability, so it can be applied to semiconductor materials, composite materials, battery electrode materials, hydrogen storage materials, Field emission materials and ultra-sensitive sensors and other fields. [0003] Theoretically, electron mobility and hole mobility are equal in graphene, and n-type field eff...

Claims

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Application Information

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IPC IPC(8): C23C16/26C30B25/00C30B29/02C01B31/02
Inventor 高辉
Owner LANZHOU UNIVERSITY
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