Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing sulfur-doped graphene films

A technology of sulfur-doped graphene and thin films, applied in chemical instruments and methods, gaseous chemical plating, crystal growth and other directions, to achieve the effects of simple and feasible preparation process, stable product quality, and convenience for large-scale production

Inactive Publication Date: 2011-09-21
LANZHOU UNIVERSITY
View PDF8 Cites 58 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are relatively few studies on other element doping in the prior art, and there are few disclosures in this aspect

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for preparing sulfur-doped graphene films
  • Method for preparing sulfur-doped graphene films
  • Method for preparing sulfur-doped graphene films

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] In the first step, hexane and sulfur powder are mixed, and the mixed liquid is treated under ultrasonic waves for about 20 minutes to form a uniform and transparent solution. Wherein the consumption of hexane is 50ml, and the sulfur powder is 1mg.

[0022] In the second step, the metal copper substrate is placed in the center of the quartz tube, and the entire chemical vapor deposition (CVD) system is evacuated to 10 -3 torr, into the reducing protective atmosphere H 2 Mix gas with Ar (volume ratio 1:5) until the pressure in the system reaches 10-11 torr (gas flow rate is about 400 sccm); heat the metal substrate at 500°C for about 30 minutes.

[0023] In the third step, when the temperature of the center of the electric furnace reaches 950°C, stop introducing the reducing protective atmosphere, and make the vacuum degree in the furnace reach 10°C. -3 torr, introduce the mixed liquid precursor of hexane and sulfur powder into the reaction system, control its feed rate...

Embodiment 2

[0028] In the first step, hexane and sulfur powder are mixed, and the mixed liquid is treated under ultrasonic waves for about 20 minutes to form a uniform and transparent solution. Wherein the consumption of hexane is 50ml, and the sulfur powder is 1mg.

[0029] In the second step, the metal copper substrate is placed in the center of the quartz tube, and the entire chemical vapor deposition system is evacuated to 10 -3 torr, into the reducing protective atmosphere H 2 Mix gas with Ar (1:5) until the pressure in the system reaches 10-11 torr (the gas flow rate is about 400 sccm); raise the temperature to 500° C. and heat-treat the metal substrate for about 30 minutes.

[0030] In the third step, when the temperature of the center of the electric furnace reaches 950°C, stop introducing the reducing protective atmosphere, and make the vacuum degree in the furnace reach 10°C. -3 torr, introduce the mixed liquid precursor of hexane and sulfur powder into the reaction system, co...

Embodiment 3

[0035] In the first step, hexane and sulfur powder are mixed, and the mixed liquid is treated under ultrasonic waves for about 20 minutes to form a uniform and transparent solution. Wherein the hexane consumption is 50ml, and the sulfur powder is 1.5mg.

[0036] In the second step, the metal copper substrate is placed in the center of the quartz tube, and the entire chemical vapor deposition system is evacuated to 10 -3 torr, into the reducing protective atmosphere H 2 Mix gas with Ar (1:5) until the pressure in the system reaches 10-11 torr (the gas flow rate is about 400 sccm); raise the temperature to 500° C. and heat-treat the metal substrate for about 30 minutes.

[0037] In the third step, when the temperature of the center of the electric furnace reaches 950°C, stop introducing the reducing protective atmosphere, and make the vacuum degree in the furnace reach 10°C. -3 torr, introduce the mixed liquid precursor of hexane and sulfur powder into the reaction system, con...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a method for preparing sulfur-doped graphene films. The sulfur-doped graphene films are prepared with chemical vapor deposition. The method comprises the following steps: a metal substrate is put in a reactor and preheated in heating and reduction protective atmosphere, then the metal substrate is heated to 900-1000 DEG C, the reduction protective gas is stopped to blow in the reactor, the vacuum degree of the reactor reaches 10-2 Torr to 10-3 Torr, then mixed liquid carbon source and sulfur source are introduced into the reactor in gas state, the required sulfur-doped grapheme films are grown on the metal substrate, a post-treatment is carried out, and the sulfur-doped graphene films are transferred to a substrate material.

Description

technical field [0001] The invention relates to a preparation method of a graphene film, in particular to a preparation method of a sulfur-doped graphene film. Background technique [0002] Graphene is a kind of carbon atom separated from graphite in 2004 by two physicists Andre Geim and Konstantin Novoselov of the University of Manchester, UK. 2 The hybrid orbitals form a two-dimensional crystal material with a hexagonal grid structure. The two also shared the 2010 Nobel Prize in Physics for their pioneering experiments. Studies have shown that graphene has excellent properties, such as high electron mobility, good thermal conductivity, light transmission and good stability, so it can be applied to semiconductor materials, composite materials, battery electrode materials, hydrogen storage materials, Field emission materials and ultra-sensitive sensors and other fields. [0003] Theoretically, electron mobility and hole mobility are equal in graphene, and n-type field eff...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C23C16/26C30B25/00C30B29/02C01B31/02
Inventor 高辉
Owner LANZHOU UNIVERSITY
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com