Method for preparing sulfur-doped graphene films
A sulfur-doped graphene and thin film technology, applied in chemical instruments and methods, gaseous chemical plating, crystal growth, etc., to achieve the effects of convenient large-scale production, simple and feasible preparation process, product quality and easy control
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Embodiment 1
[0021] In the first step, hexane and sulfur powder are mixed, and the mixed liquid is treated under ultrasonic waves for about 20 minutes to form a uniform and transparent solution. Wherein the consumption of hexane is 50ml, and the sulfur powder is 1mg.
[0022] In the second step, the metal copper substrate is placed in the center of the quartz tube, and the entire chemical vapor deposition (CVD) system is evacuated to 10 -3 torr, into the reducing protective atmosphere H 2 Mix gas with Ar (volume ratio 1:5) until the pressure in the system reaches 10-11 torr (gas flow rate is about 400 sccm); heat the metal substrate at 500°C for about 30 minutes.
[0023] In the third step, when the temperature of the center of the electric furnace reaches 950°C, stop introducing the reducing protective atmosphere, and make the vacuum degree in the furnace reach 10°C. -3 torr, introduce the mixed liquid precursor of hexane and sulfur powder into the reaction system, control its feed rate...
Embodiment 2
[0028] In the first step, hexane and sulfur powder are mixed, and the mixed liquid is treated under ultrasonic waves for about 20 minutes to form a uniform and transparent solution. Wherein the consumption of hexane is 50ml, and the sulfur powder is 1mg.
[0029] In the second step, the metal copper substrate is placed in the center of the quartz tube, and the entire chemical vapor deposition system is evacuated to 10 -3 torr, into the reducing protective atmosphere H 2 Mix gas with Ar (1:5) until the pressure in the system reaches 10-11 torr (the gas flow rate is about 400 sccm); raise the temperature to 500° C. and heat-treat the metal substrate for about 30 minutes.
[0030] In the third step, when the temperature of the center of the electric furnace reaches 950°C, stop introducing the reducing protective atmosphere, and make the vacuum degree in the furnace reach 10°C. -3 torr, introduce the mixed liquid precursor of hexane and sulfur powder into the reaction system, co...
Embodiment 3
[0035] In the first step, hexane and sulfur powder are mixed, and the mixed liquid is treated under ultrasonic waves for about 20 minutes to form a uniform and transparent solution. Wherein the hexane consumption is 50ml, and the sulfur powder is 1.5mg.
[0036] In the second step, the metal copper substrate is placed in the center of the quartz tube, and the entire chemical vapor deposition system is evacuated to 10 -3 torr, into the reducing protective atmosphere H 2 Mix gas with Ar (1:5) until the pressure in the system reaches 10-11 torr (the gas flow rate is about 400 sccm); raise the temperature to 500° C. and heat-treat the metal substrate for about 30 minutes.
[0037] In the third step, when the temperature in the center of the electric furnace reaches 950°C, stop introducing the reducing protective atmosphere to make the vacuum in the furnace reach 10°C. -3 torr, introduce the mixed liquid precursor of hexane and sulfur powder into the reaction system, control its ...
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