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An antireflective coating composition comprising fused aromatic rings

A technology of fused aromatics and compositions, which is applied in the direction of photosensitive materials, coatings, patterned surfaces of photomechanical equipment, etc., can solve problems such as uniformity and distortion, and achieve reduced reflection and good solution Effects of stability and high dry etching resistance

Inactive Publication Date: 2011-09-21
AZ ELECTRONICS MATERIALS USA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The two main disadvantages of back reflectivity are thin film interference effects and reflective notches
Thin film interference or standing waves lead to changes in the critical linewidth dimension as the photoresist thickness varies due to deviations in the total light intensity in the photoresist film, or interference of reflected and incident exposure radiation may cause standing wave effect, which distorts the uniformity of radiation across the thickness

Method used

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  • An antireflective coating composition comprising fused aromatic rings
  • An antireflective coating composition comprising fused aromatic rings
  • An antireflective coating composition comprising fused aromatic rings

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0063] Example 1. Synthesis of poly(anthracene methyl-co-anthracene-co-1-naphthol-co-phenol-co-adamantane)

[0064] Equipped with overhead mechanical stirring, condenser, heat meter, dean stark trap and N 2In the purged 1000mL 4-neck round bottom flask (RBF), weigh and add monomers together, anthracene 13.4g (0.075 mole), 1-naphthol 10.8g (0.075 mole), 1,3-adamantanediol 25.2g (0.15 mole), phenol 14.1 g (0.15 mole), 134.18 g diglyme (diethylene glycol dimethyl ether) and 100.16 g CPME (cyclopentyl methyl ether). The components were mixed together for 10 minutes at room temperature and 2.5 g of trifluoromethanesulfonic acid was added. It was mixed for 5 minutes at room temperature and then the temperature was set to 140°C. As the temperature was raised, water was removed from the reaction using a Dean Stark trap. The reaction took one hour to complete and reach the set temperature. 3.90 g (0.075 mol) of 9-anthracenemethanol were added to this prepolymer mixture after one ho...

Embodiment 2

[0066] 1.5 g of the polymer of Example 1 was bottled, 0.15 g of TMOM-BP was added, 0.6 g of DBSA (dodecylbenzenesulfonic acid) as a 10% solution in ArF-Thinner (70PGME / 30PGMEA) was added and 12.75g ArF Thinner was added to form 15.00g solution. The formulation was filtered through a 0.2 μm filter after shaking overnight.

Embodiment 3

[0068] n and k measurements: The formulation of Example 2 was adjusted to 1.25% solids with ArF Thinner and the mixture was mixed until all material became soluble. The homogeneous solution was filtered with a 0.2 μm membrane filter. Spin-coat this filtered solution on a 4" silicon wafer at 1500 rpm. Bake the coated wafer on a hot plate at 230°C for 60 seconds. Then, measure with a VASE ellipsometer manufactured by J.A. Woollam Co. Inc. n and k values.The optical constants n and k for this film were found to be n=1.44, k=0.48 for 193nm radiation.

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Abstract

The present invention relates to an organic spin coatable antireflective coating composition comprising with (i) at least one unit with fused aromatic rings in the backbone of the polymer of structure (1 ), (ii) at least one aromatic unit ring in the backbone of the polymer of structure (2) where the aromatic ring has a pendant alkylene(fusedaromatic) group and a pendant hydroxy group, and, (iii) at least one unit with an aliphatic moiety in the backbone of the polymer of structure (3), where, Fr1 is a substituted or unsubstituted fused aromatic ring moiety with 3 or more fused aromatic rings, Fr2 is a fused aromatic ring moiety with 2 or more fused aromatic rings, Ar is a substituted or unsubstituted aromatic ring moiety, R' and R'' are independently selected from hydrogen and C1-C4 alkyl, y=1-4, and B is a substituted or unsubstituted aliphatic moiety, and R1 is selected from hydrogen or aromatic moiety. The invention further relates to a process for imaging the present composition.

Description

technical field [0001] The present invention relates to absorbent antireflective coating compositions comprising polymers containing 3 or more fused aromatic rings in the polymer backbone, and methods of forming images using the antireflective coating compositions. This method is particularly useful for imaging photoresists using radiation in the deep and extreme ultraviolet (uv) region. Background technique [0002] Photoresist compositions are used in microlithographic processes, which are used, for example, in the manufacture of computer chips and integrated circuits to make miniaturized electronic components. Typically, in these methods, a thin coating of a photoresist composition is first applied to a substrate material, such as a silicon-based wafer used in the manufacture of integrated circuits. The coated substrate is then baked to evaporate any solvent in the photoresist composition and fix the coating to the substrate. The baked coated surface of the substrate is...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08L61/16C09D161/16G03F7/09H01L21/027
CPCH01L21/0276H01L21/3081G03F7/091C08G2261/342C08G61/02C09D145/00C09D161/16H01L21/0274
Inventor M·D·拉曼D·麦肯齐C·安亚戴格伍
Owner AZ ELECTRONICS MATERIALS USA CORP