Manufacturing method for ohmic contact with low specific contact resistance and low roughness

A technology of ohmic contact and manufacturing method, applied in the field of low-roughness ohmic contact manufacturing and low-specific contact resistance, can solve the problems of poor Mo thickness and evaporation conditions, and metal warping and peeling off, so as to improve the overlay accuracy and improve the Stable, easy to achieve results

Active Publication Date: 2011-11-02
THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

[0005] There are some reports about the TiAlMoAu system in foreign countries. The report also mentions the good effect of Mo on improving the surface morphology, but the problem of Mo adhesion is ignore

Method used

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  • Manufacturing method for ohmic contact with low specific contact resistance and low roughness
  • Manufacturing method for ohmic contact with low specific contact resistance and low roughness
  • Manufacturing method for ohmic contact with low specific contact resistance and low roughness

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[0021] The present invention will be described in further detail below with reference to the accompanying drawings and specific embodiments.

[0022] A method for manufacturing low specific contact resistance and low roughness ohmic contact, characterized in that the manufacturing method comprises the following steps:

[0023] A. Evaporation to form ohmic contact: Put the cleaned metal source (including metal Ti, Al, Ni, Mo and Au) into the crucible of the electron beam evaporation table, and then perform the melting source process to make the metal meet the needs of evaporation. After that, the GaN epitaxial material wafer with the ohmic contact pattern photoetched is placed on the planet carrier of the electron beam evaporation table, and the vacuum degree in the chamber of the electron beam evaporation table is pumped to 7×10 -7 Torr, the metal evaporation process is carried out sequentially in the order of Ti, Al, Ni, Mo, and Au to form an ohmic contact;

[0024] B. Strip...

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Abstract

The invention discloses a manufacturing method for ohmic contact with low specific contact resistance and low roughness. The manufacturing method is characterized in that hardly compatible Mo metal is introduced to an ohmic contact metal seed to form a TiAlNiMoAu combination, thus the surface roughness and the specific contact resistance after alloying are reduced under the same alloying condition. In the manufacturing method, the low diffusivity of the Mo is utilized, and a binary alloy phase is matched, thus low contact resistance is realized, the roughness of the ohmic contact after alloying is also reduced, the overlay accuracy of a photolithographic process is improved, the number of process steps is reduced, the stability of the ohmic contact is improved, and a firm foundation is established for device process practicability.

Description

technical field [0001] The invention relates to a method for designing and manufacturing semiconductor microelectronics, in particular to a method for manufacturing an ohmic contact with low specific contact resistance and low roughness. Background technique [0002] The formation of ohmic contacts on n-type or unintentionally doped GaN and AlGaN materials is a complex process involving a variety of solid-state reactions. Using the relevant knowledge of physics, metallurgy and chemistry, the design includes multilayer The metallization system of metal may produce alloying or solid phase regrowth after heating the metallization system, thus forming an ohmic contact of "metal-GaN layer (AlGaN layer)-semiconductor". [0003] The formation of alloy ohmic contacts on GaN or AlGaN needs to meet some basic design requirements. The first is the barrier layer. The principle of selecting a metal for this layer is to form a low-resistance, low work function, thin and thermally stable ...

Claims

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Application Information

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IPC IPC(8): H01L21/28H01L21/285C23C14/18C23C14/30
Inventor 宋建博张志国于峰涛王勇
Owner THE 13TH RES INST OF CHINA ELECTRONICS TECH GRP CORP
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