Preparation method of silicon carbide composite film of reflector used in space
A silicon carbide and composite film technology for reflectors, applied in the direction of gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of complex process, complex structure, poor high temperature resistance of Ag, etc., and achieve good combination, High surface finish and good uniformity
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Embodiment 1
[0014] The polished reaction-sintered silicon carbide substrate is placed in the deposition chamber, and the following steps are performed:
[0015] First deposit silicon carbide whisker film: the deposition chamber has two gas paths, one path uses trichloromethylsilane as the reaction gas and hydrogen as the carrier gas, and the methyltrichlorosilane is placed in an evaporating kettle heated by a water bath. The temperature is 35°C, the pressure of the evaporator is controlled at 0.2MPa, the total flow rate of hydrogen and trichloromethylsilane is controlled at 200ml / min, hydrogen is sent to the deposition chamber by bubbling method, and the other gas is through Enter argon gas, the flow rate of argon gas is 800ml / min, adopt low-pressure chemical vapor deposition, the deposition pressure in the deposition chamber is 6kPa, the deposition temperature is 1100°C, the deposition time is 8h, and silicon carbide whiskers are deposited on the surface of the substrate;
[0016] Then d...
Embodiment 2
[0019] The polished reaction-sintered silicon carbide substrate is placed in the deposition chamber, and the following steps are performed:
[0020] First deposit silicon carbide whisker film: the deposition chamber has two gas paths, one path uses trichloromethylsilane as the reaction gas and hydrogen as the carrier gas, and the methyltrichlorosilane is placed in an evaporating kettle heated by a water bath. The temperature is 40°C, the pressure of the evaporator is controlled at 0.3MPa, the total flow rate of hydrogen and trichloromethylsilane is controlled at 300ml / min, hydrogen is sent to the deposition chamber by bubbling method, and the other gas is through Enter argon gas, the flow rate of argon gas is 900ml / min, adopt low-pressure chemical vapor deposition, the deposition pressure in the deposition chamber is 7kPa, the deposition temperature is 1150°C, the deposition time is 48h, and silicon carbide whiskers are deposited on the surface of the substrate;
[0021] Then ...
Embodiment 3
[0024] The polished reaction-sintered silicon carbide substrate is placed in the deposition chamber, and the following steps are performed:
[0025] First deposit silicon carbide whisker film: the deposition chamber has two gas paths, one path uses trichloromethylsilane as the reaction gas and hydrogen as the carrier gas, and the methyltrichlorosilane is placed in an evaporating kettle heated by a water bath. The temperature is 38°C, the pressure of the evaporator is controlled at 0.27MPa, the total flow rate of hydrogen and trichloromethylsilane is controlled at 250ml / min, hydrogen is sent to the deposition chamber by bubbling method, and the other gas is through Enter argon gas, the flow rate of argon gas is 850ml / min, adopt low-pressure chemical vapor deposition, the deposition pressure in the deposition chamber is 6.7kPa, the deposition temperature is 1120°C, the deposition time is 12h, and silicon carbide whiskers are deposited on the surface of the substrate;
[0026] Th...
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