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Preparation method of crystalline silicon solar cell

A technology of solar cells and crystalline silicon, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of wasting special gas flow, unable to adjust belt speed, and low output, so as to increase output, improve production efficiency, and save costs Effect

Active Publication Date: 2013-10-23
BAODING GUANGWEI GREEN ENERGY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

And the belt speed cannot be adjusted, the output is low, and the special gas flow is wasted

Method used

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  • Preparation method of crystalline silicon solar cell

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Experimental program
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Effect test

Embodiment 1

[0012] Example 1, making a red solar cell. It includes the following steps:

[0013] (1) Texture and diffuse the raw silicon wafers; control the texturing depth at 0.2-1.0 μm, and control the diffusion as a shallow junction to be less than 0.1-0.2 μm;

[0014] (2), use PECVD equipment to coat silicon nitride antireflection film; adjust flow meter 1 and flow meter 3 respectively, control the ammonia gas entering U-shaped groove 1, U-shaped groove 2, U-shaped groove 3 and U-shaped groove 4 NH 3 and silane SIH 4 flow rate to make ammonia NH 3 and silane SIH 4 The flow ratio is 6:5; respectively adjust flow meter 2 and flow meter 4 to control the ammonia gas NH entering U-shaped groove 5, U-shaped groove 6, U-shaped groove 7 and U-shaped groove 8 3 and silane SIH 4 flow rate to make ammonia NH 3 and silane SIH 4 The flow ratio is 3: 1, 7: 2 or 4: 1, preferably 7: 2; adjust the flow meter 5 to control the hydrogen H entering the U-shaped groove 5 2 The flow rate is 200-300...

Embodiment 2

[0017] Embodiment 2, making a yellow solar battery sheet. It includes the following steps:

[0018] (1) Texture and diffuse the raw silicon wafers; control the texturing depth at 02-1.0 μm, and control the diffusion as a shallow junction to be less than 0.1-0.2 μm;

[0019] (2), use PECVD equipment to plate silicon nitride antireflection film; Regulate flowmeter 1 and flowmeter 3 respectively, control enters the ammonia in U-shaped groove], U-shaped groove 2, U-shaped groove 3 and U-shaped groove 4 NH 3 and silane SIH 4 flow rate to make ammonia NH 3 and silane SIH 4 The flow ratio is 6:5; respectively adjust flow meter 2 and flow meter 4 to control the ammonia gas NH entering U-shaped groove 5, U-shaped groove 6, U-shaped groove 7 and U-shaped groove 8 3 and silane SIH 4 flow rate to make ammonia NH 3 and silane SIH 4 The flow ratio is 3: 1, 7: 2 or 4: 1, preferably 4: 1; adjust the flow meter 5 to control the hydrogen H entering the U-shaped groove 5 2 The flow rate...

Embodiment 3

[0022] Embodiment 3, making green solar cells. It includes the following steps:

[0023] (1) Texture and diffuse the raw silicon wafers; control the texturing depth at 0.2-1.0 μm, and control the diffusion as a shallow junction to be less than 0.1-0.2 μm;

[0024] (2), use PECVD equipment to coat silicon nitride antireflection film; adjust flow meter 1 and flow meter 3 respectively, control the ammonia gas entering U-shaped groove 1, U-shaped groove 2, U-shaped groove 3 and U-shaped groove 4 NH 3 and silane SIH 4 flow rate to make ammonia NH 3 and silane SIH 4 The flow ratio is 6:5; respectively adjust flow meter 2 and flow meter 4 to control the ammonia gas NH entering U-shaped groove 5, U-shaped groove 6, U-shaped groove 7 and U-shaped groove 8 3 and silane SIH 4 flow rate to make ammonia NH 3 and silane SIH 4 The flow ratio is 3: 1, 7: 2 or 4: 1, preferably 3: 1; adjust the flowmeter 5 to control the hydrogen H entering the U-shaped groove 5 2 The flow rate is 200-...

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Abstract

The invention discloses a preparation method of a crystalline silicon solar cell. The method comprises the following steps: 1, carrying out texture etching and diffusion on a raw material silicon wafer, wherein the depth of texture etching is controlled to be 0.2-1.0 mu m, the diffusion is controlled to be 0.1-0.2 mu m; 2, coating a silicon nitride antireflection film by using PECVD (plasma enhanced chemical vapor deposition) equipment, wherein the flow ratio of ammonia gas NH3 and silane SIH4 entering into the first four U-shaped grooves of the PECVD equipment is 6:5; the flow ratio of ammonia gas NH3 and silane SIH4 entering into the last four U-shaped grooves of the PECVD equipment is 3:1-4:1; hydrogen H2 with gas flow of 200-300Sccm is charged in the five U-shaped groove in all the U-shaped grooves; the color of the film of which the thickness is controlled to be 20-40nm is yellow, the color of the film of which the thickness is controlled to be 40-60nm is red, and the color of the film of which the thickness is controlled to be 100-120nm is green. According to the invention, through changing the total amount of the gas entering all the U-shaped grooves of the PECVD equipment,the thickness of the antireflection film can be controlled, and then the cell can show red, green and yellow, so that the demand for the integration of photovoltaic products and buildings can be satisfied. The invention has the advantages of increasing output, reducing the flows of ammonia gas NH3, silane SIH4 and hydrogen H2, improving production efficiency and lowering the cost.

Description

technical field [0001] The invention belongs to the technical field of solar cell production, in particular to a method for preparing a crystalline silicon solar cell. Background technique [0002] At present, the anti-reflection film of solar cells is mainly produced by plasma-enhanced chemical vapor deposition (PECVD). Whether the anti-reflection film is one layer or two layers, the surface color of the battery sheet is always blue-black. After the battery component is packaged, the color of the battery component is single. And the belt speed cannot be adjusted, the output is low, and the special gas flow is wasted. With the continuous progress of the photovoltaic industry, the market has put forward higher requirements for photovoltaic products, not only to ensure the continuous improvement of efficiency, but also to put forward more stringent requirements for the appearance of the cells. At present, a large number of photovoltaic power stations are under construction, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0216C23C16/52
CPCY02P70/50
Inventor 何四红
Owner BAODING GUANGWEI GREEN ENERGY TECH CO LTD
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