Unlock instant, AI-driven research and patent intelligence for your innovation.

Hydrothermal method for preparing Cu2CdSnS4 or Cu2FeSnS4 nanocrystals

A nanocrystal and preparation process technology, applied in nanotechnology, chemical instruments and methods, inorganic chemistry, etc., can solve problems such as difficulty in ensuring uniformity of film thickness, uniformity of chemical composition, increase in investment cost of battery production, and decline in device performance. Achieve the effects of good crystallinity, simple preparation method and low synthesis temperature

Inactive Publication Date: 2011-11-23
SHANGHAI UNIV
View PDF2 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the requirement of a high vacuum environment greatly increases the production investment cost of the battery; the substances deposited on the vacuum deposition chamber cause waste of raw materials; or Cu2FeSnS4 thin film, this method is difficult to ensure the uniformity of film thickness and chemical composition, resulting in the degradation of device performance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Hydrothermal method for preparing Cu2CdSnS4 or Cu2FeSnS4 nanocrystals
  • Hydrothermal method for preparing Cu2CdSnS4 or Cu2FeSnS4 nanocrystals
  • Hydrothermal method for preparing Cu2CdSnS4 or Cu2FeSnS4 nanocrystals

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] Add reactant precursor 0.5mmol cupric chloride, 0.25mmol cadmium chloride, 0.25mmol stannous chloride and 1mmol sulfur powder to a 80ml reaction kettle in turn, then add 30ml anhydrous ethylenediamine in a vacuum glove box Reactor. Put the reaction kettle into the oven for heating, the temperature rises to 180 0 C was reacted for 15 hours, the heating was stopped and the reactant was cooled to room temperature, and isopropanol was added to the cooled reactant to allow the nanoparticles to settle. Then the nanocrystals were collected by centrifugation at a speed of 10000 rpm for 3 minutes, the suspension was poured into another container, and finally the precipitate was dispersed in toluene. After further separation, Cu 2 CdSnS 4 Nanocrystalline.

Embodiment 2

[0021] The reactant precursor 0.5mmol copper acetate, 0.25mmol ferrous sulfate, 0.25mmol stannous chloride and 1mmol sulfur powder were added to a 80ml reaction kettle in turn, and then 30ml anhydrous ethylenediamine was added to the reaction in a vacuum glove box. kettle. Put the reaction kettle into the oven for heating, the temperature rises to 180 0 C was reacted for 15 hours, the heating was stopped and the reactant was cooled to room temperature, and isopropanol was added to the cooled reactant to allow the nanoparticles to settle. Then the nanocrystals were collected by centrifugation at a speed of 10000 rpm for 3 minutes, the suspension was poured into another container, and finally the precipitate was dispersed in toluene. After further separation, Cu 2 FeSnS 4 Nanocrystalline.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a hydrothermal method for preparing low-cost and high-quality Cu2CdSnS4 or Cu2FeSnS4 nanocrystals, which comprises the following steps of: adding a solvent, namely anhydrous ethylenediamine, and reactant precursors, namely copper chloride, cadmium chloride or ferrous sulfate, stannous chloride and sulfur powder into an autoclave, raising the temperature, reacting for a certain period of time, and dissolving nanocrystals in mixed solution of isopropanol and toluene after the reaction is finished; and centrifuging for 3 to 10 minutes at a speed of 5,000 to 12,000 revolutions per minute, and collecting the nanocrystals to obtain the high-quality Cu2CdSnS4 or Cu2FeSnS4 nanocrystals. The method has the advantages that: the method for preparing the nanocrystals is simple, the synthesis temperature is low, the used precursors have low material cost, the prepared nanocrystal particles have high dispersibility and crystallinity, and the like. The Cu2CdSnS4 or Cu2FeSnS4 nanocrystals prepared by the method can be used as an absorption layer of a photovoltaic device or a good thermoelectric and magnetic material.

Description

technical field [0001] The present invention relates to a kind of I that can be used as light absorbing layer of thin film photovoltaic cell 2 -II-IV-VI 4 Preparation process of group semiconductor nanocrystals. Specifically, a Cu 2 CdSnS 4 or Cu 2 FeSnS 4 Hydrothermal preparation process of nanocrystals. Background technique [0002] With the rapid development of the global economy, non-renewable resources such as coal, oil, and natural gas are decreasing day by day. It is an urgent problem for mankind to find new energy sources that are abundant, safe, and clean. Solar energy, which accounts for more than 99% of the earth's total energy, is inexhaustible, inexhaustible, and non-polluting, so it has become one of the new energy sources that scientists from all over the world are competing to develop and utilize. [0003] The most widely researched and applied solar cells are mainly monocrystalline silicon, polycrystalline silicon and amorphous silicon photovoltaic c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C01G19/00C01G49/00B82Y40/00
Inventor 曹萌李亮刘秀勇沈悦王林军
Owner SHANGHAI UNIV