Solid-state RF (radio frequency) power supply based on E-power amplifying circuit

Abstract

The invention discloses a solid-state RF (radio frequency) power supply based on an E-power amplifying circuit, comprising an RF signal generator, an RF power amplifying circuit, a power supply circuit and an RF power detector, wherein the RF power amplifying circuit comprises a field-effect transistor, a resonant capacitor, a series inductor and a parallel inductor; a grid electrode of the field-effect transistor is connected with a signal output end of the RF signal generator, and a source electrode of the field-effect transistor is grounded as well as a drain electrode of the field-effect transistor is connected with one end of the parallel inductor and one end of the resonant capacitor respectively; the other end of the parallel inductor is connected with a DC (direct current) output end of the power supply circuit; the other end of the resonant capacitor is connected with one end of the series inductor, and the other end of the series inductor is connected with an input end of the RF power detector; and one part of the series inductor and the resonant capacitor form a series resonance network and the other part of the series inductor and an output capacitor of the field-effect transistor form a load network which can cause the field-effect transistor to work in an E switching mode. The solid-state RF power supply has the advantages of high efficiency, simple structure, low cost and the like.

Description

technical field [0001] The invention relates to a radio frequency power output device, in particular to a solid-state radio frequency power supply based on a Class E power amplifier circuit. Background technique [0002] RF power supply is a device used to generate radio frequency power signals, which is the core component of semiconductor process equipment. All equipment that generates plasma for material processing requires RF power supply to provide energy. Process manufacturing equipment for integrated circuits, solar cells and LEDs (Light Emitting Diodes), such as etching machines, PVD (Physical Vapor Deposition, physical vapor deposition), PECVD (Plasma Enhanced Chemical Vapor Deposition, plasma enhanced chemical vapor phase Deposition), ALD (Atomic layer deposition, atomic layer deposition) and other equipment are equipped with RF power supplies of different power specifications. [0003] The RF power supply is generally composed of an RF signal generator, an RF pow...

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Problems solved by technology

[0006] In order to solve the problems of low efficiency, large heat generation and the complex structure and high cost of building a high-power solid-state RF power supply in the existing RF power supply, the present invention provides a solid-state RF power supply based on a class E power amplifier circuit. The solid-state RF power supply The power supply includes a radio frequency signal generator, a radio frequency power amplifier circuit, a power supply line and a radio frequency power detector, and the radio frequency power amplifier circuit includes a field effect transistor, a resonant capacitor, a series inductor and a parallel inductor; wherein the gate of the field effect transistor is connected to the The signal output terminal of the radio frequency signal generator is connected, the source of the field effect transistor is grounded, and the drain of the field effect transistor is connected with one end of the parallel inductor and one end of the resonant capacitor respectively; The other end of the inductor is connected to the DC output end of the power supply line, the other end of the resonant capacitor is connected to one end of the series inductor; the other end of the series inductor is connected to the input end of the radio frequency power detector A part of the series inductance and the resonant capacitor form a series resonant network, and another part of the series inductance and the output capacitance of the field effect transistor form a load network that can make the field effect transistor work in the E-class switching mode

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