Organic thin film transistor using paper substrate and silk dielectric layer and manufacturing method thereof

Abstract

The invention relates to an organic thin film transistor using a paper substrate and a silk dielectric layer and a manufacturing method thereof. Wherein, the organic thin film transistor device includes: a paper substrate; a gate, which is arranged on the paper substrate; a gate dielectric layer, which is arranged on the paper substrate and covers the gate, wherein the material of the gate dielectric layer is It includes a fibroin; an organic semiconductor layer; and a source and a drain, wherein the organic semiconductor layer, the source and the drain are arranged on the gate dielectric layer.

Description

technical field [0001] The present invention relates to an organic thin film transistor device and its manufacturing method, especially to an organic thin film transistor using paper substrate and silk dielectric layer and its manufacturing method, so that the organic thin film transistor device can be flexible and rollable sex. Background technique [0002] In recent years, thin film transistors (TFTs) have been widely used in sensors, electronic tags (RFID) and display devices. In order to reduce the production cost of the product and expand the application range of the product, an organic thin film transistor (OTFT) that is low-cost, flexible, and can be produced in a large area is a research and development trend. [0003] In general, organic thin film transistors can be classified into top-contact organic thin film transistors and bottom-contact organic thin film transistors. like Figure 1A As shown, the top-contact organic thin film transistor includes: a substrate ...

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Problems solved by technology

[0005] The known gate dielectric layer mainly uses sputtering to form dielectric materials on the substrate and gate, so it often faces problems such as expensive equipment and complicated processes.

In addition, the best organic semiconductor layer material commonly used in organic thin film transistors is pentacycline, but because of the poor match between commonly used dielectric materials and pentacycline, the carrier mobility of pentacycline is low

For example, the pentacycline organic thin film transistor generally uses silicon oxide as the material of the gate dielectric layer, and its pentacycline carrier mobility is less than 0.5 cm 2 / V-sec; and even when the currently known good aluminum nitride dielectric material is used as the gate dielectric layer material, the pentacycline carrier mobility of the pentacycline organic thin film transistor cannot be higher than 2cm 2 / V-sec

Therefore, with existing technologies and materials, it is still impossible to produce organic thin film transistors with high efficiency.

[0006] At the same time, although ordinary flexible plastic substrates can be used to produce flexible and rollable organic thin film transistor devices, due to the awareness of environmental protection has been highly valued by the world, if plastic materials are used, it may be difficult to recycle and cause damage. Disadvantages of environmental pollution

Organic thin film transistors based on paper are an option, but due to the limitation of process temperature and the limited selection of dielectric layer materials for paper substrates, the carrier mobility of organic thin film transistors based on paper is currently low. For example , People such as Florian Eder of Germany in 2004, disclosed in Applied Physics Letters periodical (Applied Physics Letters 84,2673-2675 (2004)) take paper as substrate and take polyvinylphenol (polyvinylphenol, PVP) as dielectric layer material five The characteristics of cyclocycline organic thin film transistors, the pentacycline carrier mobility is only about 0.2cm 2 / V-sec

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