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Compound semiconductor device and manufacturing method thereof

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, amplifiers, etc., can solve problems such as device threshold changes

Active Publication Date: 2014-10-29
FUJITSU LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This situation leads to such a serious problem that the existence of the degenerated layer becomes one of the main reasons for the great change in the threshold value of the device

Method used

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  • Compound semiconductor device and manufacturing method thereof
  • Compound semiconductor device and manufacturing method thereof
  • Compound semiconductor device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0021] In this embodiment, an MIS-type AlGaN / GaN HEMT is disclosed as a compound semiconductor device.

[0022] Figure 1A to Figure 3C is a schematic cross-sectional view showing a method of manufacturing the MIS-type AlGaN / GaN HEMT according to the first embodiment in process order. For the sake of illustration, in Figure 2A to Figure 3A In , only the vicinity of the gate is shown in an enlarged manner.

[0023] First, if Figure 1A As shown, for example, a compound semiconductor layer 2 is formed on a semi-insulating silicon carbide substrate 1 as a growth substrate. The compound semiconductor layer 2 includes a buffer layer 2a, an electron transit layer 2b, an intermediate layer 2c, an electron supply layer 2d, and a capping layer 2e. In the AlGaN / GaN HEMT, a two-dimensional electron gas (2DEG) is generated in the vicinity of the interface of the electron transit layer 2b and the electron supply layer 2d (more precisely, the intermediate layer 2c).

[0024] More spec...

no. 2 example

[0072] In this embodiment, a Schottky-type AlGaN / GaN HEMT is disclosed as a compound semiconductor device.

[0073] Image 6 It is a schematic cross-sectional view showing main processes of the method of manufacturing the Schottky-type AlGaN / GaN HEMT according to the second embodiment.

[0074] First, as in the first embodiment, execute Figure 1A to Figure 3A process to apply a fluorine termination treatment on the surface of the compound semiconductor layer 2 .

[0075] Subsequently, if Image 6 As shown, a gate 7 is formed.

[0076] More specifically, first, a lower resist (for example, product name PMGI: manufactured by U.S. MicroChem Corporation) and an upper resist (for example, product name PFI32-A8) are applied and formed on the compound semiconductor layer 2 by, for example, a spin coating method. : manufactured by Sumitomo Chemical Co., Ltd.). Openings, eg, about 0.8 μm in diameter, are formed in the upper resist by ultraviolet exposure. Next, using the upper r...

no. 3 example

[0080] In this embodiment, a power supply device including an AlGaN / GaN HEMT selected from the first embodiment and the second embodiment is disclosed.

[0081] Figure 7 is a connection diagram showing a schematic structure of a power supply device according to the third embodiment.

[0082] The power supply device according to this embodiment includes: a high-voltage primary circuit 21 , a low-voltage secondary circuit 22 ; and a transistor 23 disposed between the primary circuit 21 and the secondary circuit 22 .

[0083] The primary circuit 21 includes an AC power source 24, a so-called bridge rectifier circuit 25, and a plurality of (here, four) switching elements 26a, 26b, 26c, and 26d. Further, the bridge rectifier circuit 25 has a switching element 26e.

[0084] The secondary circuit 22 includes a plurality of (here, three) switching elements 27a, 27b, and 27c.

[0085] In this embodiment, each of the switching elements 26a, 26b, 26c, 26d, 26e of the primary circuit ...

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Abstract

On a surface of a compound semiconductor layer including inner wall surfaces of an electrode trench, an etching residue 12a and an altered substance 12b which are produced due to dry etching for forming the electrode trench are removed, and a compound semiconductor is terminated with fluorine. Gate metal is buried in the electrode trench via a gate insulating film, or the gate metal is directly buried in the electrode trench, whereby a gate electrode is formed.

Description

technical field [0001] Embodiments discussed herein relate to a compound semiconductor device and a method of manufacturing the same. Background technique [0002] Nitride semiconductor devices, which are high withstand voltage, high power semiconductor devices, have been actively developed by utilizing characteristics such as high saturation electron velocity, wide band gap, and the like. Many reports have also been made on field effect transistors, particularly, HEMTs (High Electron Mobility Transistors) which are nitride semiconductor devices. In particular, AlGaN / GaN HEMTs using GaN as an electron transit layer and AlGaN as an electron supply layer have attracted attention. In the AlGaN / GaN HEMT, distortion caused by the difference in lattice constant between GaN and AlGaN occurs in AlGaN. Due to the piezoelectric polarization caused by this deformation and the spontaneous polarization of AlGaN, a high-concentration two-dimensional electron gas (2DEG) is obtained. Thi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/778H01L21/335H02M5/10H03F3/189
CPCH01L21/306H01L21/30621H01L29/4236H01L29/7787H03F1/3247H01L29/2003H01L29/66462H01L21/02057H01L21/283H01L29/42316H01L29/7788
Inventor 尾崎史朗中村哲一多木俊裕金村雅仁
Owner FUJITSU LTD
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