Copper indium gallium selenium (CIGS) solar battery with gradient energy band and preparation method thereof

A solar cell, copper indium gallium selenide technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of battery photoelectric conversion efficiency reaching the limit, environmental damage, high energy consumption, etc., achieve good market promotion prospects, and improve absorption capacity , Improve the effect of conversion efficiency

Active Publication Date: 2013-04-24
CHINA TRIUMPH INT ENG +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, the commercialized solar cells in the global photovoltaic market are mainly crystalline silicon solar cells, accounting for about 85% of the market share. There is very little room for increasing production capacity to reduce costs; and the high energy consumption and high pollution in the process of silicon material purification and cell processing have caused great damage to the environment

Method used

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  • Copper indium gallium selenium (CIGS) solar battery with gradient energy band and preparation method thereof
  • Copper indium gallium selenium (CIGS) solar battery with gradient energy band and preparation method thereof
  • Copper indium gallium selenium (CIGS) solar battery with gradient energy band and preparation method thereof

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Experimental program
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Effect test

Embodiment 1

[0039] The sample preparation process uses the following steps:

[0040] (1) After ultrasonically cleaning the glass substrate with tap water, deionized water, absolute alcohol, and acetone for 5 minutes, put the glass substrate in an oven for drying at 100°C;

[0041] (2) Put the cleaned glass substrate into the sputtering equipment and use the Mo target to deposit the Mo back electrode layer, and set the sputtering background vacuum to 1×10 -4 Pa, process gas pressure 0.8Pa, target distance 80mm, power density 2W cm -2 , the film thickness is 800nm;

[0042] (3) Rotate the glass substrate prepared with the Mo back electrode layer to the next target position to prepare the light absorbing layer, which is divided into the following stages: ①Use the CIGS quadruple single target sputtering to deposit the CIGS light absorbing layer, and the target composition is Cu 0.25 In 0.18 Ga 0.06 Se 0.51 , and turn on the Ga co-sputtering target at the same time, the sputtering time i...

Embodiment 2

[0047] (1) After ultrasonically cleaning the glass substrate with tap water, deionized water, absolute alcohol, and acetone for 10 minutes, put the glass substrate in an oven and dry it at 100°C;

[0048] (2) Put the cleaned glass substrate into the sputtering equipment and use the MoCu alloy target to co-sputter to deposit the MoCu back electrode layer, and the sputtering background vacuum is set to 1×10 -4 Pa, process gas pressure 1Pa, target distance 60mm, power density 1.5W cm -2 , the film thickness is 600nm;

[0049] (3) Rotate the glass substrate prepared with the MoCu back electrode layer to the next target position to prepare the light-absorbing layer, which is divided into the following stages: ①Use the CIGS quadruple single-target sputtering to deposit the CIGS light-absorbing layer, and the target composition is Cu 0.25 In 0.18 Ga 0.06 Se 0.51 , and at the same time turn on the Ga co-sputtering target, the sputtering time is 10 minutes; ② turn off the co-sputt...

Embodiment 3

[0054] (1) After ultrasonically cleaning the glass substrate with tap water, deionized water, absolute alcohol, and acetone for 10 minutes, put the glass substrate in an oven and dry it at 100°C;

[0055] (2) Put the cleaned glass substrate into the sputtering equipment and use the Mo target to co-sputter to deposit the Mo back electrode layer, and the sputtering background vacuum is set to 1×10 -4 Pa, process gas pressure 0.6Pa, target distance 100mm, power density 2W cm -2 , the film thickness is 500nm;

[0056] (3) Rotate the glass substrate prepared with the Mo back electrode layer to the next target position to prepare the light absorbing layer, which is divided into the following stages: ①Use the CIGS quadruple single target sputtering to deposit the CIGS light absorbing layer, and the target composition is Cu 0.25 In 0.18 Ga 0.06 Se 0.51 , and turn on the CuGa co-sputtering target at the same time, the sputtering time is 10 minutes; ② turn off the co-sputtering tar...

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Abstract

The invention discloses a CIGS (copper indium gallium selenium) solar battery with a gradient energy band and a preparation method thereof. The method comprises the following steps: preparing a light absorption layer by utilizing a CIGS quaternary target; forming the gradient energy band in the light absorption layer in a batch-type sputtering mode; replacing the traditional water bath depositionmethod for preparing a CdS transition layer with a magnetron sputtering method for preparing a ZnS transition layer; implementing the preparation of the CIGS light absorption layer by a one-step method, and preparing the CIGS thin film solar battery by a pure physical vapor deposition technology, thus the controllability of the preparation process and the uniformity of components are improved greatly, and the high-speed deposition of the thin film is realized. The gradient distribution of a light absorption layer total energy band is realized through utilizing the co-sputtering of a CuGa target or a Ga target, and the absorption efficiency of the incoming light by the absorption layer is improved, thus the photoelectric conversion efficiency of the solar battery is improved; and hazardouselements such as Cd, H2Se are avoided from being used in the preparation process, the solar battery and the preparation method are environmentally-friendly, and accord with the increasingly harsh environmentally-friendly policy, the future development requirements are met, and the solar battery and the preparation method have bright market prospects.

Description

technical field [0001] The invention belongs to the field of photovoltaic solar cell manufacturing, in particular to a copper indium gallium selenium solar cell with gradient energy bands and a preparation method thereof. Background technique [0002] With the depletion of traditional fossil resources and the outbreak of the nuclear power crisis in Japan, countries around the world are paying more and more attention to the research and development of green, clean and renewable energy. Because solar energy is clean, non-polluting, and inexhaustible, it has become an important part of the sustainable development energy strategy of various countries. Solar cells, as an effective means of utilizing solar energy, have broad prospects for development. [0003] At present, the commercialized solar cells in the global photovoltaic market are mainly crystalline silicon solar cells, accounting for about 85% of the market share. There is very little room for increasing production cap...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/032H01L31/04H01L21/203H01L31/18
CPCY02E10/50Y02P70/50
Inventor 彭寿曹欣王芸任志艳向光
Owner CHINA TRIUMPH INT ENG
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