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High-performance thin film resistor and preparation method thereof

A thin-film resistor, high-performance technology, applied in the direction of resistor manufacturing, resistors, resistor components, etc., can solve the problems of high price of imported products, increase product cost, and limit the scope of application, etc., to achieve easy implementation and strong adhesion , a wide range of effects

Inactive Publication Date: 2012-01-11
GUIZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the development of my country's economy, the demand for basic electronic components in the domestic market is increasing, and it is difficult to meet the demand of the domestic market by relying on imports, and the high price of imported products increases the cost of products; and general resistance materials Existing problems such as easy corrosion and poor thermal stability limit its scope of application

Method used

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  • High-performance thin film resistor and preparation method thereof
  • High-performance thin film resistor and preparation method thereof

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Embodiment 1 of the present invention: the structure of high performance thin film resistor is as figure 1 As shown, an insulating substrate 4 is made of sapphire as a material, and a resistive film 3 with a thickness of 1 μm is produced on the insulating substrate 4 by using tantalum nitride. Lead-out electrodes 1 are arranged on both sides of each resistive film 3, and each The top surface of the resistance film 3 both sides edge is provided with top electrode 5, and the production material of lead-out electrode 1 and top electrode 5 is tantalum, and their thickness is 1 μm, on the top surface of resistance film 3 and the top surface of top electrode 5 An insulating protective film 2 with a thickness of 0.5 μm made of silicon dioxide is provided on it.

[0026] A method for manufacturing high-performance thin-film resistors, laying a mask for depositing a resistive film on a clean sapphire insulating substrate 4, and depositing a resistive film 3 on the insulating sub...

Embodiment 2

[0027] Embodiment 2 of the present invention: the structure of high performance thin film resistor is as figure 1 As shown, an insulating substrate 4 is made of ordinary alumina as a material, and a resistive film 3 with a thickness of 0.5 μm is fabricated on the insulating substrate 4 using a nickel-chromium alloy, and lead-out electrodes 1 are provided on both sides of each resistive film 3 , top electrodes 5 are arranged on the top surface of each resistance film 3 both sides edges, and the materials of lead-out electrodes 1 and top electrodes 5 are copper, and their thickness is 0.5 μm. The top surface of the electrode 5 is provided with an insulating protective film 2 with a thickness of 1 μm made of silicon nitride.

[0028] A method for manufacturing high-performance thin-film resistors, laying a mask for depositing a resistive film on a clean alumina insulating substrate 4, and depositing a resistive film 3 on the insulating substrate 4 using a magnetron sputtering met...

Embodiment 3

[0029] Embodiment 3 of the present invention: the structure of high performance thin film resistor is as figure 1 As shown, silicon dioxide is included as a material to make an insulating substrate 4, and a composite layer with a thickness of 1.5 μm is made on the insulating substrate 4 with a combination of iron nitride and nickel-chromium alloy as a resistive film 3, and each resistive film 3 Both sides of each resistance film 3 are provided with lead-out electrodes 1, and top electrodes 5 are arranged on the top surface of each resistance film 3. The materials for making lead-out electrodes 1 and top electrodes 5 are Nb-Ag alloys, and their thicknesses are 1.5 μm, on the top surface of the resistive thin film 3 and the top surface of the top electrode 5, an insulating protection film 2 with a thickness of 1.2 μm made of silicon nitride is provided.

[0030]A method for manufacturing high-performance thin-film resistors, laying a mask for depositing a resistive thin film on ...

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Abstract

The invention discloses a high-performance thin film resistor and a preparation method thereof. The high-performance thin film resistor comprises an insulation substrate which is provided with resistor thin films; the two sides of each resistor thin film are provided with extraction electrodes; the top surfaces of the edges at the two sides of each resistor thin film are provided with top electrodes; and the top surface of each resistor thin film and the top surfaces of the top electrodes are provided with insulation protection films. According to the invention, the thin film resistor is prepared in a mode of the combination of a mask technology and a deposition process, the method is easy for industrialization, the adhesive force among all layers of the obtained product is high, the quality is good; and metal with good chemical stability is taken as the material of the thin film resistor so as to improve the corrosion resistance and heat stability of the resistor material, thus the thin film resistor can be used in severe environments, such as high frequency, high temperature, high voltage, low temperature, outer space and the like, and can be applied to numerous high-tech fields, and the application range of the thin film resistor is expanded.

Description

technical field [0001] The invention relates to an electronic component and a preparation method thereof, in particular to a thin film resistor and a preparation method thereof. Background technique [0002] The thin film resistor has a large specific surface area, good heat dissipation performance, and can withstand large power. The film has strong adhesion to the insulating substrate, good impact resistance, and better stability than ordinary resistors. At present, only a few foreign manufacturers are able to mass-produce thin-film resistors. Foreign countries are in a monopoly position in the field of high-quality thin-film resistor production technology, and related technologies are kept secret. With the development of my country's economy, the demand for basic electronic components in the domestic market is increasing, and it is difficult to meet the demand of the domestic market by relying on imports, and the high price of imported products increases the cost of produ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01C7/00H01C1/00H01C1/14H01C17/00H01C17/075
Inventor 邓朝勇雷远清崔瑞瑞张荣芬
Owner GUIZHOU UNIV