High fluorine-containing aromatic-aliphatic negative photoresist and application thereof to preparing polymer waveguide devices

A technology of negative photoresist and waveguide devices, which is applied in the directions of photosensitive materials, light guides, and optical components used in opto-mechanical equipment, and can solve the problems of large light loss and so on.

Inactive Publication Date: 2012-01-18
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The cross-linked Tg of SU-8 series photoresist can reach over 200°C, which can fully meet the requirements, ...

Method used

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  • High fluorine-containing aromatic-aliphatic negative photoresist and application thereof to preparing polymer waveguide devices
  • High fluorine-containing aromatic-aliphatic negative photoresist and application thereof to preparing polymer waveguide devices
  • High fluorine-containing aromatic-aliphatic negative photoresist and application thereof to preparing polymer waveguide devices

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Dissolve 1.40g 3-methoxy 1,4-hydroquinone, 6.68g decafluorobiphenyl, 1.04g 1,5-pentanediol in 50ml N,N-dimethylacetamide, add the catalyst cesium fluoride 4g, the mixture was heated to 60°C, and reacted at this temperature for 18h. The reactant was precipitated in a large amount of methanol, washed with water several times, and dried to obtain a white solid. The upper product was dissolved in 30 mL of dichloromethane, and the reaction temperature was kept at about 0°C during the ice bath reaction. Then slowly drip in containing BBr 3 CH 2 Cl 2 的 solution 5mL, of which BBr 3 The content is 6.06mmol. After the addition is complete, react at room temperature for 24 hours. The reactant was precipitated in methanol, washed with water several times, and dried to obtain a white solid product. The upper reaction product was dissolved in 20 mL of epichlorohydrin, the temperature was raised to 55°C, and 0.50 g of sodium hydroxide was added every half an hour for a total of ten ...

Embodiment 2

[0032] Dissolve 4.32g of 3-methoxyphenyl 1,4-hydroquinone and 6.68g of decafluorobiphenyl in 50ml of N,N-dimethylacetamide, add 4g of cesium fluoride as a catalyst, and heat the mixture to 60 ℃, react at this temperature for 18h. The reactant was precipitated in a large amount of methanol, washed with water several times, and dried to obtain a white solid. The upper product was dissolved in 30 mL of dichloromethane, and the reaction temperature was kept at about 0°C during the ice bath reaction. Then slowly drip in containing BBr 3 CH 2 Cl 2 Solution 10mL, of which BBr 3 The content of 12.0mmol. After the addition is complete, react at room temperature for 24 hours. The reactant was precipitated in methanol, washed with water several times, and dried to obtain a white solid product. The upper reaction product was dissolved in 20 mL of epichlorohydrin, the temperature was raised to 55°C, and 0.50 g of sodium hydroxide was added every half an hour for a total of ten times. Th...

Embodiment 3

[0036] 2.16g 3-methoxyphenyl 1,4-hydroquinone, 2.42g 2,2,3,3,4,4,5,5,6,6,7,7-dodecafluoro-1,8 -Octanediol and 6.68g decafluorobiphenyl are dissolved in 50ml N,N-dimethylacetamide, 4g cesium fluoride is added as a catalyst, the mixture is heated to 60°C, and reacted at this temperature for 18h. The reactant was precipitated in a large amount of methanol, washed with water several times, and dried to obtain a white solid. The upper product was dissolved in 30 mL of dichloromethane, and the reaction temperature was kept at about 0°C during the ice bath reaction. Then slowly drip in containing BBr 3 CH 2 Cl 2 的 solution 5mL, of which BBr 3 The content is 6.06mmol. After the addition is complete, react at room temperature for 24 hours. The reactant was precipitated in methanol, washed with water several times, and dried to obtain a white solid product. The upper reaction product was dissolved in 20 mL of epichlorohydrin, the temperature was raised to 55°C, and 0.50 g of sodium hy...

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Abstract

The invention belongs to the technical field of polymer optical waveguide and in particular relates to a novel high fluorine-containing aromatic-aliphatic negative photoresist composition. The composition comprises 54.5-73wt% of high fluorine-containing aromatic-aliphatic epoxy resins, 5.5-7.3wt% of photo acid generator and 20-40wt% of organic solvent. The exposure wavelength of the photoresist composition can be adjusted by changing the type of the photo acid generator. Meanwhile, most hydrogen atoms are replaced by fluorine atoms in the fluorinated epoxy resins and fewer epoxy resins are absorbed in the communication bands; therefore, the photoresist composition can be exposed in the ultraviolet wavelength range from 200nm to 400nm and can form an image to manufacture polymer optical waveguide devices.

Description

Technical field [0001] The invention belongs to the technical field of polymer optical waveguides, and specifically relates to a new type of negative high fluorine-containing aromatic-fatty negative photoresist composition, which is composed of high fluorine-containing aromatic-fatty epoxy resin, photoacid generator and organic Solvent composition, the photoresist can be used to prepare polymer waveguide devices. technical background [0002] Photoresist is a polymer material that is sensitive to light and radiation. It usually consists of a polymer matrix, PAG (Photo Acid Generator) and a solvent. Such materials are currently mainly used in microlithography, manufacturing of microelectronic devices and chemical devices, etc. The basic manufacturing process of manufacturing devices with photoresist is to first coat the photoresist on the substrate material, bake it to form a film, and then expose the photoresist layer under an activating radiation source through a mask. The PAG...

Claims

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Application Information

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IPC IPC(8): G03F7/004G02B6/138
Inventor 崔占臣万莹史作森许文辉
Owner JILIN UNIV
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