Preparation method of silicon chip used for planar solid discharge tube chip manufacturing process

Abstract

The invention provides a preparation method of a silicon chip used for a planar solid discharge tube chip manufacturing process. The method comprises the following steps: carrying out acid corrosion on a silicon chip to remove silicon and obtaining a silicon chip with a certain thickness; carrying out alkali etch on the silicon chip whose thickness becomes thinner until a surface of the silicon chip becomes compact and uniform; carrying out second acid corrosion on the silicon chip with a compact and uniform surface to obtain a silicon chip which meets a thickness requirement and has a compact and uniform surface. According to the invention, a principle that the acid corrosion can rapidly remove silicon and the alkali etch can obtain a compact and uniform surface is utilized, a corrosion mode is employed to process the silicon chip to obtain the silicon chip which meets the thickness requirement and has the compact and uniform surface; a corrosion process flow has the advantages of a simple process, a simple operation, small energy consumption, good silicon chip consistency, a large surface metal Ohm connecting area and a low chip broken rate.

Description

technical field [0001] The invention relates to a chip manufacturing process, especially a silicon chip manufacturing process that removes the remaining damaged layer on the processed surface to obtain a flat, smooth, and non-damaged layer, specifically a silicon chip manufacturing process for a planar solid discharge tube chip. Tablet preparation method. [0002] Background technique [0003] At present, the manufacturing process of planar solid discharge tube chip is: single crystal silicon, resistance detection, acid corrosion, polishing, oxidation, photolithography, boron expansion, photolithography, phosphorus expansion, photolithography, surface gold, photolithography, alloy, Testing, scribing, rejecting, chip storage. It can be seen that in the conventional planar diode chip manufacturing process, acid etching and polishing steps are required to obtain a silicon wafer with a thickness that meets the requirements and a dense and uniform surface. [0004] The purpose...

AI Technical Summary

Problems solved by technology

[0018] The purpose of the present invention is to aim at the steps of acid etching and polishing required to obtain a silicon chip with a thickness meeting the requirements and a dense and uniform surface in the conventional planar diode chip manufacturing process, wherein the polishing process has complex processes, cumbersome operations and can In view of the problems of high consumption, poor consistency of the obtained silicon wafers, small ohmic contact area of ​​surface gold and high fragmentation rate, a method for preparing silicon wafers for the manufacturing process of planar solid discharge tube chips is proposed