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Method for preparing iron-doped titanium nitride ferromagnetic film based on oriented growth

A technology of ferro-titanium nitride and magnetic thin film, applied in the application of magnetic film to substrate, magnetic layer, ion implantation plating, etc., can solve the problems of high resistivity and difficulties of oxides, and achieve high target utilization rate , low production cost, easy to implement

Inactive Publication Date: 2012-02-22
TIANJIN UNIVERSITY OF TECHNOLOGY
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Problems solved by technology

Due to the relatively high resistivity of oxides, there are difficulties in practical applications

Method used

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  • Method for preparing iron-doped titanium nitride ferromagnetic film based on oriented growth
  • Method for preparing iron-doped titanium nitride ferromagnetic film based on oriented growth
  • Method for preparing iron-doped titanium nitride ferromagnetic film based on oriented growth

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Embodiment

[0025] According to the structure and property analysis of the samples prepared in the present invention, the best implementation mode of preparing Fe-doped polycrystalline TiN thin films by target reactive sputtering method will be described in detail below. The DPS-I type ultra-high vacuum facing target magnetron sputtering coating machine produced by the research center.

[0026] A method for preparing an orientationally grown iron-doped titanium nitride ferromagnetic thin film, the steps are as follows:

[0027] 1) In the ultra-high vacuum facing target magnetron sputtering coating machine, a pair of Ti targets with a purity of 99.99% are installed on the facing target heads, one end is used as the N pole of the magnetic force line, and the other end is the S pole; The thickness is 5 mm and the diameter is 100 mm; a 99.99% pure Fe sheet is fixed on the surface of the Ti target; the distance between the two targets is 100 mm, and the distance between the axis of the target ...

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Abstract

The invention provides a method for preparing an iron-doped titanium nitride ferromagnetic film based on oriented growth by adopting an ultrahigh vacuum three-target co-deposition magnetron sputtering coating machine. The method comprises the following steps: (1) arranging a pair of titanium (Ti) targets on opposite target heads of the coating machine, and fixing ferrum (Fe) sheets on the surfaces of the Ti targets; (2) arranging a glass substrate on a midperpendicular of a connecting line of the opposite targets; (3) vacuumizing a sputtering chamber; (4) introducing mixed gas of argon (Ar) and nitrogen (N2) into a vacuum chamber; (5) starting a sputtering power supply, and applying current and voltage to the pair of the Ti targets; (6) opening a baffle for sputtering coating; and (7) stopping sputtering after completion of coating, continuously vacuumizing, shutting down a vacuum system, and then filling N2 into the vacuum chamber after the system is cooled so as to finally obtain the target product. The iron-doped titanium nitride ferromagnetic film obtained by the method has room-temperature ferromagnetism and semiconductor properties at the same time, thus achieving potential application value in electronic devices; and the method has the advantages of simple process, high utilization ratio of target materials and low production cost, and is easy to implement, thus being suitable for large-scale popularization and application.

Description

technical field [0001] The invention relates to a semiconductor material preparation technology, in particular to a method for preparing an orientationally grown iron-doped titanium nitride ferromagnetic thin film. Background technique [0002] The 2007 Nobel Prize in Physics was awarded to Albert Fert and Peter Grünberg, the pioneers of spintronics. Now, how to obtain high spin-polarized current is still one of the hot issues in the field of spintronics. The methods to obtain high spin injection mainly include selecting electrode materials with high spin polarizability and preparing dilute magnetic semiconductor materials. [0003] Diluted magnetic semiconductor refers to a new type of semiconductor material formed by partially replacing non-magnetic elements in semiconductors with magnetic transition metal elements or rare earth metal elements. At present, the widely studied dilute magnetic semiconductors mainly include: II–VI dilute magnetic semiconductors, such as (Cd,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01F41/18H01F10/10C23C14/35C23C14/06
Inventor 王晓姹
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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