Tunneling field effect transistor (TFET) and manufacturing method thereof

A tunneling field effect and transistor technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of limiting the application of TFET devices, small on-state current, etc., achieve good sub-threshold characteristics, and simple preparation process Effect

Active Publication Date: 2012-02-29
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

TFET has many excellent characteristics such as low leakage current, low subthreshold slope, low operating voltage, and low power consumption. However, due to the limitation of source junction tu

Method used

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  • Tunneling field effect transistor (TFET) and manufacturing method thereof
  • Tunneling field effect transistor (TFET) and manufacturing method thereof
  • Tunneling field effect transistor (TFET) and manufacturing method thereof

Examples

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[0034] The present invention will be further illustrated by examples below. It should be noted that the purpose of publishing the embodiments is to help further understanding of the present invention, but those skilled in the art can understand that various replacements and modifications are possible without departing from the spirit and scope of the present invention and the appended claims of. Therefore, the present invention should not be limited to the contents disclosed in the embodiments, and the scope of protection of the present invention shall be subject to the scope defined by the claims.

[0035] A specific example of the preparation method of the present invention includes Figures 1 to 4b Process steps shown:

[0036] 1. On the bulk silicon wafer silicon substrate 1 with the crystal orientation (100), the active area isolation layer is made by using the shallow trench isolation technology, and the substrate doping concentration is lightly doped; then a gate diel...

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Abstract

The invention discloses a tunneling field effect transistor (TFET) and a manufacturing method thereof, which belong to the fields of logic devices and circuits of field effect transistors. A high-doping source region of the TFET consists of a P<+> high-doping region and an N<+> high-doping region, and threshold values of a metal-oxide semiconductor field effect transistor (MOSFET) part and a TFET part of a device can be adjusted through ingenious layout variation, so that the performance of a TFET device is improved, and the manufacturing method is simple. Compared with the conventional TFET, the TFET has the advantages that: higher switch-on current can be obtained and a steep subthreshold gradient can be kept by the device under the condition of the same process and the same active region size, so that the TFET is expected to be used in a low power consumption field and has higher practical value.

Description

technical field [0001] The invention belongs to the field of field-effect transistor logic devices and circuits in CMOS ultra-large integrated circuits (ULSI), in particular to a tunneling field-effect transistor (TFET) combined with a metal-oxide layer-silicon field-effect transistor (MOSFET) and its preparation method. Background technique [0002] Driven by Moore's Law, the feature size of traditional MOSFETs has been shrinking, and now it has entered the nanometer scale. As a result, the negative effects of short-channel effects on devices have become more serious. The leakage-induced barrier reduction, band-band tunneling and other effects make the off-state leakage current of the device continuously increase. At the same time, the sub-threshold slope of the traditional MOSFET is limited by the thermoelectric potential and cannot be reduced synchronously with the shrinking of the device size, thus increasing device power consumption. The power consumption problem has ...

Claims

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Application Information

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IPC IPC(8): H01L29/78H01L29/08H01L21/336
Inventor 黄如黄芊芊詹瞻王阳元
Owner SEMICON MFG INT (SHANGHAI) CORP
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