Sample processing method for detecting boron in industrial silicon with graphite furnace atomic absorption spectrometry

Abstract

The invention discloses a sample processing method for detecting boron in industrial silicon with graphite furnace atomic absorption spectrometry. The method comprises the following steps: weighing proper sample silicon powder; selecting proper acid to digest and dissolve the sample; heating to volatilize the silicon, and separating the residue; and filtering to obtain a clear solution and adding Zr-Ba serving as a proper matrix modifier to suppress the interference of a matrix. The method disclosed by the invention can be used for increasing the measurement sensitivity of the graphite furnace atomic absorption spectrometry and improving precision, is high in measurement speed, small in interference, high in accuracy and low in measurement cost, and is especially suitable for the quality detection in an industrial silicon production enterprise.

Description

technical field

[0001] The invention relates to element detection of chemical raw materials, in particular to a sample processing method for measuring boron in industrial silicon by graphite furnace atomic absorption spectrometry. Background technique

[0002] With the development of the electronics industry, industrial silicon as a raw material is widely used in the field of semiconductor manufacturing. Based on the physical properties required by its semiconductor materials, the requirements for impurity elements in industrial silicon materials are very strict, so the detection of its impurities is very strict, and there are strict requirements for its limit. As boron and phosphorus have the greatest impact on the performance of industrial silicon, boron, as a common element in nature, is widely distributed in soil, and there are relatively few determinations of boron in silicon in previous literatures. Activation method, ICP-OES, atomic absorption, atomic fluorescence, e...

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