Method for manufacturing chip type organic solid electrolyte electrolytic capacitor

Abstract

The invention discloses a method for manufacturing a chip type organic solid electrolyte electrolytic capacitor. The method comprises the steps of preparing an anode body; preparing a dielectric oxidation film; and preparing a polymer cathode structure. The method is characterized in that the cathode of the chip type organic solid electrolyte electrolytic capacitor is obtained by employing an electrostatic self-assembling method; and by alternately assembling polyelectrolyte with reverse charges on the surface of the dielectric oxidation film in a solution, an electroconductive polymer composite polyelectrolyte is further stably structured as a cathode film of the chip type organic solid electrolyte electrolytic capacitor. By employing the manufacturing method provided by the invention, the obtained chip type organic solid electrolyte electrolytic capacitor has the characteristics of low equivalent series resistance and favorable voltage withstand property. The method can be used for manufacturing other capacitors or electronic elements.

Description

technical field [0001] The invention relates to the field of electronic materials and electronic components, in particular to a method for preparing a conductive polymer composite polyelectrolyte as a chip capacitor cathode. Background technique [0002] With the high-performance requirements of electronic products, it is urgent to improve the performance of chip electrolytic capacitors, especially the high-frequency characteristics of products, that is, the ESR value of products. Among them, the conductivity of the solid electrolyte has a great influence on the internal resistance, leakage current and high frequency characteristics. Organic polymers represented by conductive polymers are used as solid electrolytes (with a conductivity of 1-500s / cm) than traditional chip-type solid tantalum electrolytic capacitor cathode materials MnO 2 (Conductivity 0.1s / cm) has lower resistance and can exhibit excellent high-frequency characteristics. Therefore, in recent years, people h...

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Problems solved by technology

However, due to the introduction of oxidants in the method of chemical in-situ deposition, oxidant ions will accumulate in the defects of the dielectric film, deteriorating the withstand voltage performance of the dielectric film, resulting in poor withstand voltage of the obtained capacitor, and the rated working voltage of the capacitor cannot be increased.

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