Manufacturing methods of tungsten-titanium alloy target billet and target material

Abstract

The invention provides manufacturing methods of a tungsten-titanium alloy target billet and a target material. The manufacturing method of the tungsten-titanium alloy target billet comprises the following steps: loading tungsten and titanium powder into a mold; and carrying out a cold-press moulding process and a vacuum hot pressed sintering process so as to prepare the tungsten and titanium powder in the mold into the tungsten-titanium alloy target billet, wherein the parameters of the vacuum hot pressed sintering process are as follows: the vacuum degree is less than or equal to 100Pa, the pressure is 20-30MPa, the sintering temperature is 1300-1600 DEG C and the sintering time is 3-12 hours. By utilizing the manufacturing method of the tungsten-titanium alloy target billet provided by the technical scheme of the invention, the obtained tungsten-titanium alloy target billet is uniform in microstructure and high in compactness, has no cracks and accords with semiconductor sputtering; and the tungsten-titanium alloy target billet obtained by utilizing the manufacturing method of the tungsten-titanium alloy target billet is low in cost.

Description

technical field [0001] The invention relates to the field of target processing, in particular to a tungsten-titanium alloy target blank and a method for manufacturing the target. Background technique [0002] Physical Vapor Deposition (PVD, Physical Vapor Deposition) is widely used in high-end industries such as optics, electronics, and information, such as: integrated circuits, liquid crystal displays (LCD, Liquid Crystal Display), industrial glass, camera lenses, information storage, ships , chemical industry, etc. The alloy target used in PVD is one of the most important raw materials in the manufacturing process of integrated circuits and liquid crystal displays. [0003] With the continuous development of PVD technology, the demand and quality requirements for alloy targets are increasing day by day. The finer the grains of the alloy target, the more uniform the composition structure, and the smaller the surface roughness, the thin film formed on the silicon wafer by P...

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Problems solved by technology

[0006] In the prior art, the powder metallurgy process is usually used to produce the tungsten-titanium alloy target blank, but the hardness value of the tungsten-titanium alloy target blank obtained through the process parameters of the existing powder metallurgy process is relatively high, and cracks are prone to appear, which makes the final obtained Tungsten-titanium alloy targets cannot meet the requirements of tungsten-titanium alloy targets used in semiconductor integrated circuits and solar cells

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