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Nanometer polishing solution for titanium oxide film chemical mechanical planarization and application

A titanium oxide thin film, chemical mechanical technology, applied in the field of nano-polishing liquid, to achieve the effect of simple and easy method, no pollution to the environment, and long storage time

Inactive Publication Date: 2012-04-11
TIANJIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

After reviewing domestic and foreign patents and literature, there is no report on the chemical mechanical polishing of titanium oxide, a resistive material.

Method used

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  • Nanometer polishing solution for titanium oxide film chemical mechanical planarization and application
  • Nanometer polishing solution for titanium oxide film chemical mechanical planarization and application
  • Nanometer polishing solution for titanium oxide film chemical mechanical planarization and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] A nano-polishing liquid for chemical-mechanical planarization of titanium oxide films is composed of nano-abrasives, pH regulators, surfactants, defoamers, bactericides, cleaning aids and solvents.

[0031] Preparation of nano-polishing liquid: the polishing liquid contains 20wt% silica colloid of 10~30nm; 0.2wt% lauryl glycol ether; 50ppm polydimethylsilane; 10ppm isomeric thiazolinone; isopropanol 0.03wt%; KOH and tetramethylammonium hydroxide (volume ratio of 1:1) are the pH regulator, the pH is 8, and the rest is deionized water. When preparing, mix the above raw materials, use a magnetic stirrer to stir evenly, and then directly experiment on the machine.

[0032] Realization of polishing process: 6EC nSpire polishing machine from Strasbaugh in the United States is used, the polishing pad is Rohm&Haas IC1000, the rotational speed of the polishing head is 35rpm, the rotational speed of the polishing disc is 40rpm, the flow rate of the polishing liquid is 100ml / min, ...

Embodiment 2

[0037] A nano-polishing liquid for chemical-mechanical planarization of titanium oxide films is composed of nano-abrasives, pH regulators, surfactants, defoamers, bactericides, cleaning aids and solvents.

[0038] Preparation of nano-polishing liquid: the polishing liquid contains 5wt% of 10~30nm silica colloid, 4wt% of 40nm cerium oxide; 0.1wt% of polyglycol ether, 0.1wt% of dodecyl glycol ether; Methylsilane 50ppm; isomeric thiazolinone 10ppm; isopropanol 0.03wt%; KOH and hydroxylamine (volume ratio 1:3) are pH regulators, pH is 9.01, and the rest is deionized water. When preparing, mix the above raw materials, use a magnetic stirrer to stir evenly, and then directly experiment on the machine.

[0039] The polishing process, polishing sample preparation and polishing effect test are the same as in Example 1.

[0040] Polishing effect: resistive material titanium oxide polishing rate 124nm / min, SiO 2 The polishing rate is 12.3nm / min, the surface roughness RMS (5μm×5μm) befo...

Embodiment 3

[0042] A nano-polishing liquid for chemical-mechanical planarization of titanium oxide films is composed of nano-abrasives, pH regulators, surfactants, defoamers, bactericides, cleaning aids and solvents.

[0043] Preparation of nano-polishing liquid: the polishing liquid contains 10~30nm silica colloid 5wt%, 80nm cerium oxide 2wt%; polyglycol ether 0.3wt%; polydimethylsilane 50ppm; isothiazolinone 10ppm ; Virahol 0.03wt%; H 2 SO 4 And acetic acid (volume ratio 1:3) is the pH regulator, the pH is 6.02, and the rest is deionized water. When preparing, mix the above raw materials, use a magnetic stirrer to stir evenly, and then directly experiment on the machine.

[0044] The polishing process, polishing sample preparation and polishing effect test are the same as in Example 1.

[0045] Polishing effect: resistive material titanium oxide polishing rate 149.8nm / min, SiO 2 The polishing rate is 7nm / min, the surface roughness RMS (5μm×5μm) before polishing is 13.7nm, and the su...

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Abstract

A nanometer polishing solution for titanium oxide film chemical mechanical planarization is formed by mixing a nanometer abrasive, a pH adjusting agent, a surfactant, a defoamer, a bactericide, an assistant cleaning agent, and a solvent, wherein the nanometer abrasive is cerium oxide or silica; the pH adjusting agent is a composite pH adjusting agent composed of an inorganic pH adjusting agent and an organic pH adjusting agent; the surfactant comprises silane polyglycol ether, polyglycol ether or dodecyl glycol ether; the defoamer is polydimethylsilane; the bactericide is isomeric thiazolinone; the assistant cleaning agent is isopropanol; and the solvent is deionized water; the nanometer polishing solution is applicable to the preparation of resistive random access memories based on titanium oxide film materials. The advantages of the invention are that: the polishing speed is stable and controllable; the film has less surface damage, is easy to clean, does not cause environment pollution, and has long storage time. When the polishing solution is used to perform chemical mechanical planarization of a resistive random material of a titanium oxide film material so as to prepare a resistive random access memory, the method is simple and practical, and is completely compatible with integrated circuit technology.

Description

technical field [0001] The invention relates to the technical field of microelectronic auxiliary materials and processing techniques, in particular to a nano-polishing liquid for chemical mechanical planarization of titanium oxide films and its application. Background technique [0002] With the rapid development of microelectronic technology and computer technology, the demand for large-capacity non-volatile memory is becoming more and more urgent. However, due to the high operating voltage, complex circuit structure, and the fact that the floating gate structure cannot be infinitely thinned, the further application of the flash memory in various fields is severely restricted. Especially when the process node enters 45nm, because the integration density cannot be further increased, the demand for new types of memory to replace the flash memory becomes more urgent. Therefore, various non-volatile memories based on new theories and new materials have emerged, and the resisti...

Claims

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Application Information

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IPC IPC(8): C09G1/02H01L45/00
Inventor 张楷亮张涛峰王芳任君尹立国王兰兰朱宇清
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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