Method for preparing boron doped graphene

A technology of boron doping and graphene, applied in graphene, chemical instruments and methods, nano-carbon, etc., can solve problems such as high equipment requirements, difficult promotion, and complicated operation
CN102485647AActive Publication Date: 2012-06-06SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
Publication Date
2012-06-06

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Abstract

The invention discloses a method for preparing boron doped grapheme, which is characterized in that reactive metal is used for reacting with low carbon halogenated hydrocarbon and boron source, in-situ boron doped grapheme can be realized under specific reaction condition. Compared with grapheme prepared by chemical vapor deposition and arc discharge method, the method of the invention has the advantages of simple operation, safety, no toxicity, low cost, less defect, good conductivity, high quality boron doped grapheme. The obtained grapheme possesses wide application prospect in the fields of solar energy batteries of photoelectric devices such as copper indium gallium selenium, cadmium telluride and dye sensitization, flat display, super capacitor, field emission material and lithium ion battery.
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Description

technical field

[0001] The invention relates to a method for preparing boron-doped graphene, which belongs to the technical field of preparation of graphene materials. Background technique

[0002] Graphene has atomic-scale thickness, excellent electrical properties, excellent chemical stability and thermodynamic stability, these properties make graphene have important application prospects in future nanoelectronics, and has become the current condensed matter physics and materials science research hotspot.

[0003] An important prerequisite for the application of graphene in microelectronic devices is that its band gap, carrier concentration, and carrier polarity can be adjusted, and chemical doping is an important way to achieve this adjustment. Theoretical calculations show that efficient p-type (n-type) graphene doping can be achieved by forming substituted B heteroatoms (N heteroatoms) in the carbon lattice. However, the current research is only in theory, and there a...

Claims

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