Method for preparing boron doped graphene

A technology of boron doping and graphene, applied in graphene, chemical instruments and methods, nano-carbon, etc., can solve problems such as high equipment requirements, difficult promotion, and complicated operation

Active Publication Date: 2012-06-06
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method has high requirements for equipment, complicated operation, a...

Method used

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  • Method for preparing boron doped graphene
  • Method for preparing boron doped graphene
  • Method for preparing boron doped graphene

Examples

Experimental program
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Embodiment 1

[0028] Synthesis of Boron-doped Graphene

[0029] Take out potassium metal in kerosene and put it into an anhydrous and oxygen-free glove box (containing H 2 O2 4 ) into a 30mL stainless steel reaction kettle with polytetrafluoroethylene lining, take 52 μL of boron tribromide (BBr 3 ) dissolved in carbon tetrachloride. Take 1.2g of potassium and put it into CCl 4 middle. Tighten the seal quickly afterwards. Put the reaction kettle into an oven, rapidly raise the temperature to 160°C within 60 minutes, and keep the temperature for 20 hours.

[0030] Purification of synthesized boron-doped graphene

[0031] After the reaction was over, it was naturally cooled to room temperature. Open the reaction kettle, add 100mL of absolute ethanol to the inner lining, wash out all the reaction products into a 200mL beaker, and stir thoroughly for 30min. filter. Wash the filter cake with deionized water, add 100mL of 10% hydrochloric acid solution, heat to 80°C, and fully stir for 30m...

Embodiment 2

[0037] Take 20 mL of benzene in the glove box and put it into a PTFE liner with a volume of 30 mL, add 60 μL of BBr 3 , add 4.0g of carbon tetrabromide (CBr 4 ), stirred thoroughly to dissolve. Take 2.0g of potassium and put it into the above solution, and place the lining in the stainless steel reaction kettle, and tighten the seal. Put the reaction kettle into an oven, rapidly raise the temperature to 180°C within 60 minutes, and keep the temperature for 12 hours.

[0038] The impurity removal purification and electrochemical performance testing process are as in Example 1.

Embodiment 3

[0040] Take 50 μL of BBr in the glove box 3 Dissolve it in 8mL of chloroform, put it into a polytetrafluoroethylene liner with a volume of 30mL, and put 2.0g of potassium into it. Place it in a stainless steel reaction kettle and tighten the seal. Put the reaction kettle into an oven, rapidly raise the temperature to 100°C within 60 minutes, and keep the temperature for 10 hours.

[0041] The impurity removal purification and electrochemical performance testing process are as in Example 1.

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Abstract

The invention discloses a method for preparing boron doped grapheme, which is characterized in that reactive metal is used for reacting with low carbon halogenated hydrocarbon and boron source, in-situ boron doped grapheme can be realized under specific reaction condition. Compared with grapheme prepared by chemical vapor deposition and arc discharge method, the method of the invention has the advantages of simple operation, safety, no toxicity, low cost, less defect, good conductivity, high quality boron doped grapheme. The obtained grapheme possesses wide application prospect in the fields of solar energy batteries of photoelectric devices such as copper indium gallium selenium, cadmium telluride and dye sensitization, flat display, super capacitor, field emission material and lithium ion battery.

Description

technical field [0001] The invention relates to a method for preparing boron-doped graphene, which belongs to the technical field of preparation of graphene materials. Background technique [0002] Graphene has atomic-scale thickness, excellent electrical properties, excellent chemical stability and thermodynamic stability, these properties make graphene have important application prospects in future nanoelectronics, and has become the current condensed matter physics and materials science research hotspot. [0003] An important prerequisite for the application of graphene in microelectronic devices is that its band gap, carrier concentration, and carrier polarity can be adjusted, and chemical doping is an important way to achieve this adjustment. Theoretical calculations show that efficient p-type (n-type) graphene doping can be achieved by forming substituted B heteroatoms (N heteroatoms) in the carbon lattice. However, the current research is only in theory, and there a...

Claims

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Application Information

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IPC IPC(8): C01B31/04C01B32/184C01B32/194C01B32/196
CPCY02P20/133
Inventor 黄富强林天全
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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