Manufacturing method of source electrode and drain electrode of N metal-oxide semiconductor field effect transistor (MOS) device

Abstract

The invention provides a manufacturing method of a source electrode and a drain electrode of a N metal-oxide semiconductor field effect transistor (MOS) device. A semiconductor substrate possessing a grid electrode is provided. The method comprises the following steps: using first doping energy and a first doping dose to carry out amorphous first doping to the semiconductor substrate which is on two sides of the grid electrode; then, using second doping energy and a second doping dose to carry out the second doping of defect elimination to the semiconductor substrate which is the on two sides of the grid electrode; using different injection energy and an injection dose to carry out multiple ion implantation to the semiconductor substrate which is on the two sides of the grid electrode; finally annealing the semiconductor substrate. During a process of forming the source electrode and the drain electrode, through using the amorphous doping and the defect elimination doping in the invention, on one hand, atomic arrangement in the process from the amorphization to crystallization on the substrate surface possesses periodicity and many impurities are activated; on the other hand, through eliminating the defects in the source electrode and the drain electrode during the ion implantation, doping ion diffusion can be inhibited. Therefore, a NMOS device resistance can be reduced and simultaneously punchthrough of the source electrode and the drain electrode can be effectively prevented.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to the manufacturing of source electrodes and drain electrodes of NMOS devices. Background technique [0002] At present, the device structure of a typical Metal-Oxide Semiconductor Field Effect Transistor (MOS) includes: an active region, a source, a drain and a gate; wherein, the active region is located in a silicon substrate , the gate is located above the active region, and the active regions on both sides of the gate are respectively implanted with ions to form a source and a drain, and the interface between the source and the substrate, and the interface between the drain and the substrate forms a PN junction; When a voltage is applied to the MOS device, a conductive channel is formed in the silicon substrate below the gate. According to the different types of carriers in the conductive channel, MOS is divided into hole type metal oxide semiconductor field effect t...

AI Technical Summary

Problems solved by technology

[0003] With the continuous reduction of the gate size of MOS devices, in the source and drain doping process, the industry needs to improve the short channel effect of MOS devices on the one hand, and to avoid the source and drain punch-through as much as possible on the other hand. The conductive channel disappears, and the MOS device loses its switching characteristics

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