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Method for depositing antireflection film

An anti-reflection film, transmission direction technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problem of low silicon content, affecting the conversion efficiency of solar cells, reducing the passivation effect on the surface of silicon wafers and reducing Reflection effect and other issues, to achieve the effect of improving conversion efficiency, improving passivation effect and anti-reflection effect

Inactive Publication Date: 2012-06-13
BAODING TIANWEI YINGLI NEW ENERGY RESOURCES
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

There are 4-8 groups of quartz tubes in the process chamber of flat-plate PECVD. The silicon wafer passes through each group of quartz tubes in a certain direction to react with the surrounding gas to produce silicon nitride film. Because the gas of silane and ammonia in each quartz tube The flow rate ratio is the same, so only silicon nitride films with the same refractive index and the same film thickness can be deposited, resulting in low silicon content in the film, which reduces the passivation effect and anti-reflection effect of the silicon wafer surface, which in turn affects the solar cells. conversion efficiency

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  • Method for depositing antireflection film
  • Method for depositing antireflection film
  • Method for depositing antireflection film

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Embodiment 1

[0044] The embodiment of the present invention relates to Roth&Rau chain-type PECVD equipment. Taking the SiNA XXL model as an example, the number of special gas tanks and quartz tubes are in one-to-one correspondence, each of which is 8, and the number of flow control meters is 2 groups. Among them, the first group of flow control meters controls the gas ratio of silane and ammonia in the first four special gas tanks, and the second group of flow control meters controls the gas ratio of silane and ammonia in the last four special gas tanks.

[0045] refer to figure 1 , figure 1 It is a schematic diagram of the structure of the special gas tank in the chain PECVD equipment. Shown in the figure is a special gas tank 1, a silane gas hole 2, an ammonia gas hole 3, and a flow control meter 4.

[0046] During chemical vapor deposition of thin films, according to the ratio of silane gas and ammonia gas required to participate in the reaction in the special gas tank 1, the first gr...

Embodiment 2

[0051] The embodiment of the present invention relates to Roth&Rau chain type PECVD equipment. Taking the SiNA XXL model as an example, the number of special gas tanks and quartz tubes is 8, and the number of the flow control meters is 8 groups, wherein each group of flow control meters controls respectively The gas ratio of silane and ammonia in a special gas tank, and the flow control meter is divided into two groups from front to back along the silicon wafer transport direction. Among them, the first group of flow control meters is the first group, and the last 7 flow control meters are the second group, that is, the first group of flow control meters controls the gas ratio of silane and ammonia in the first special gas tank, The second large group of flow control meters controls the gas ratio of silane and ammonia in the last seven special gas tanks.

[0052] It should be noted that, in the above grouping, any first n groups of flow control meters can be set as the first g...

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Abstract

The invention discloses a method for depositing an antireflection film, which comprises the following steps: one or a plurality of special-gas tanks are set as one group successively along the silicon chip transmission direction, all the special-gas tanks are divided into N groups, wherein N is not less than 2; proportion of participated silane gas and ammonia gas in each group of special-gas tank is set in advance; at least one group of flow control meter is allocated with each group of special-gas tank, each group of flow control meter can be set according to preset proportion of silane gas and ammonia gas, wherein, each group of flow control meter comprises a silane flow control meter and an ammonia gas flow control meter; silane and ammonia gas with preset proportion are respectively filled in the special-gas tank through a silane pore and an ammonia gas pore on the special-gas tank according to setup on the flow control meter; a reaction of chemical vapor deposition is carried out on the surface of the silicon chip, and at least two layers of the antireflection films are deposited. The provided method is capable of raising the passivation effect and antireflection effect of the surface of the silicon chip, and can enhance the conversion efficiency of the solar battery.

Description

technical field [0001] The invention relates to the technical field of solar cell manufacturing, in particular to a method for depositing an anti-reflection film. Background technique [0002] In the semiconductor industry, there are many ways to deposit anti-reflection coatings. Among them, chemical vapor deposition is the most widely used technology for depositing multiple materials, that is, two or more gaseous raw materials are introduced into a reaction chamber. They react chemically with each other to form a new material that is deposited on the wafer surface. The chemical reaction in the reaction chamber is very complicated, there are many factors that must be considered, and the deposition parameters vary widely, such as: the pressure in the reaction chamber, the flow rate of the gas, the path of the gas through the wafer, the chemical composition of the gas, The ratio of one gas relative to the other, the role played by the intermediate products of the reaction, an...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/455C23C16/34
Inventor 孙小娟王志国樊琦芳王涛李龙
Owner BAODING TIANWEI YINGLI NEW ENERGY RESOURCES