Sintering method of self-bonding SiC refractory material

A refractory material, self-combination technology, applied in the field of non-oxide bonded silicon carbide refractory materials, can solve the problems of material quality degradation, performance index reduction, unspecified firing atmosphere, etc., to achieve stable quality, excellent performance, short cycle effect

Inactive Publication Date: 2012-06-20
SINOSTEEL LUOYANG INST OF REFRACTORIES RES
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Problems solved by technology

[0003] Chinese patent 200910227624.6 provides a method for preparing self-bonded silicon carbide with a silicon carbide content greater than 92%. It mentions that the green body is under a protective atmosphere during sintering, but does not specify the exact firing atmosphere
The internal structure of self-bonding SiC is mainly secondary SiC bonding, buried carbon or nitrogen firing, N 2 It is easy to participate in the sintering reaction to generate a considerable amount of nitride subcrystalline phases. These nitrides are not conducive to the increase of the SiC content in the material as a side reaction product, resulting in the reduction of some performance indicators of the material; the use of argon atmosphere for sintering, due to the tightness of the furnace body and the argon Due to the purity of the gas itself, a small amount of oxygen inevitably remains in the sintering atmosphere, and the surface of the green body is oxidized at high temperature, which will also lead to a decrease in the quality of the material

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  • Sintering method of self-bonding SiC refractory material
  • Sintering method of self-bonding SiC refractory material
  • Sintering method of self-bonding SiC refractory material

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Embodiment 1

[0016] attached figure 1 What is given is an electric heating or fuel heating atmosphere sintering furnace, and the related equipment has been widely used. The sintering method of the present invention requires the sintering furnace to have good airtightness, so as to ensure the atmosphere control and safe operation of the sintering. sex.

[0017] Self-combined SiC body is prepared, using (mass percentage) 90% industrial grade black SiC particles and fine powder as aggregate, 7% silicon powder, 3% high-purity carbon powder, mixed with a hydraulic press to form.

[0018] The sintering temperature of this embodiment is 1500°C; put the dried green body into the atmosphere sintering furnace, pass through the pure Ar and then ignite the furnace, with a heating rate of 3°C per minute to 1400°C, and convert the atmosphere in the furnace to pure H 2 , when the temperature rises to 1500°C, heat preservation starts, and it is fired at this temperature for 15 hours. After the heat prese...

Embodiment 2

[0023] Preparation of self-combined SiC body, using (mass percentage) 91% high-purity SiC particles and fine powder, 6.5% silicon powder and 2.5% high-purity carbon powder as raw materials, plus 1% silicon-aluminum alloy, using friction pressing Brick machine molding.

[0024] The sintering temperature of this embodiment is 1400°C; put the dried green body into the atmosphere sintering furnace, pass through the pure Ar and light the furnace, and change the sintering furnace atmosphere to pure H at a rate of 2°C per minute to 1300°C. 2 , When the temperature rises to 1400°C, heat preservation starts, and the heat preservation time is 10 hours. After the heat preservation is completed, the furnace is stopped, converted into pure Ar, and then exits the kiln after cooling. During the whole process, the pressure difference of the U-shaped tube is maintained at (80-100) mm water column.

[0025] The performance indexes of the prepared refractories are shown in Table 2.

[0026] The...

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Abstract

The invention provides a sintering method of a self-bonding SiC refractory material. In the sintering method provided by the invention, pure H2 is introduced into a sintering furnace which is filled with a self-bonding SiC blank for serving as a protective atmosphere for material sintering, the sintering temperature is 1,400-1,500 DEG C, heat preserving time is not less than 5 hours, and a positive pressure difference in the furnace is not lower than that of a water column of 60 millimeters. The sintering method for a self-bonding SiC product provided by the invention has the advantages of safe and reliable operating process, capability of preparing a self-bonding SiC product with excellent performance and stable quality and capability of realizing large-scale production.

Description

technical field [0001] The invention relates to a firing method of a self-bonded SiC refractory material, that is, the reaction sintering self-bonded SiC refractory material is realized by controlling the sintering atmosphere, and belongs to the technical field of non-oxide bonded silicon carbide refractory materials. technical background [0002] The self-bonded SiC refractory material in the present invention is sintered by the high-temperature reaction of silicon and carbon. The self-bonded SiC refractory material belongs to the non-oxide bonded silicon carbide refractory material. In the firing process of this material, it must first ensure that the green body is It is not oxidized at high temperature, so the firing is protected by a non-oxidizing atmosphere. [0003] Chinese patent 200910227624.6 provides a method for preparing self-bonded silicon carbide with a silicon carbide content greater than 92%. It mentions that the green body is under a protective atmosphere du...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/66C04B35/64C04B35/565
Inventor 吕春江李刚李龙飞刘臻杨洋周继伟
Owner SINOSTEEL LUOYANG INST OF REFRACTORIES RES
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