Preparation method of dodecagonal zinc oxide micron rod

A zinc oxide micron and dodecagonal technology, applied in the direction of zinc oxide/zinc hydroxide, nanotechnology, etc., can solve the problems of difficulty in obtaining circular microcavities and the inability to realize circular optical crystal microcavities, etc., and reach the laser wavelength Adjustable, smooth border, laser mode adjustable effect

Inactive Publication Date: 2012-06-27
SOUTHEAST UNIV
View PDF1 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Traditional whispering gallery mode micro-lasers use a circular optical crystal microcavity structure, because the circular microcavity has the strongest optical confinement ability and the smallest boundary loss. However, it is difficult to directly obtain a circular microcavity. We usually use optical However, the micromachining process cannot achieve a circular optical crystal microcavity with sufficiently smooth boundaries.
The wurtzite structure characteristics of zinc oxide materials determine that zinc oxide micro-nanostructures usually have regular hexagonal cross-sectional structures, but regular hexagonal microcavities are not the most ideal whispering gallery mode microcavities

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of dodecagonal zinc oxide micron rod
  • Preparation method of dodecagonal zinc oxide micron rod
  • Preparation method of dodecagonal zinc oxide micron rod

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] The first step: cut the surface polished silicon wafer with the crystal plane orientation of the substrate as (100), and the substrate size of each silicon wafer after cutting is 3*4cm. Sonicate these small rectangular silicon substrates in acetone solution, ethanol solution and deionized water for 5 minutes in order to clean the surface of the silicon substrates.

[0021] The second step: prepare zinc acetate dihydrate solution and hexamethylenetetramine solution with concentrations of 0.02mol / L~0.05mol / L respectively, and stir at room temperature for 2 hours by magnetic stirring to make zinc acetate dihydrate and hexamethylenetetramine solution Methylenetetramine is fully soluble in deionized aqueous solution. Then the zinc acetate dihydrate solution and the hexamethylenetetramine solution were mixed at a volume ratio of 1:1, and 80 ml of the mixed solution was injected into a Teflon autoclave with a capacity of 80 ml.

[0022] The third step: put the silicon wafer c...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
lengthaaaaaaaaaa
lengthaaaaaaaaaa
Login to view more

Abstract

The invention discloses a method for preparing a dodecagonal zinc oxide micron rod. The method carries out secondary growth by integrating a hydrothermal method and a gas phase transmission method, and comprises the following steps that: first, a hexagonal zinc oxide micron rod is prepared through the hydrothermal method; then secondary epitaxial growth is carried out through the gas phase transmission method; and in the gas phase transmission method, because the side atoms of the hexagonal zinc oxide micron rod are desorbed, a cross sectional structure turns from a hexagon to a dodecagon. The method is simple and easy to operate, has low manufacturing cost, and can realized controlled preparation. The dodecagonal zinc oxide micron rod can be applied in designing an ultraviolet micro-laser with ultra-high quality factors and an ultra-low threshold.

Description

technical field [0001] The design of the present invention provides a preparation method for realizing the secondary growth of dodecagonal zinc oxide microrods. The method first utilizes a low-temperature hydrothermal method to prepare hexagonal zinc oxide microrods, and secondly utilizes a high-temperature gas-phase transport method to produce hexagonal zinc oxide microrods that have been obtained. Secondary epitaxial growth was carried out on ZnO-shaped microrods, and the atomic adsorption-desorption kinetics and surface smoothing behavior during the crystal growth process were used to realize the gradual transformation of ZnO hexagonal microrods into dodecagonal ones. The design of the invention provides a simple and stable method for constructing high-quality microcavity optical crystals. Background technique [0002] Since Japanese and Hong Kong scientists first observed ultraviolet laser radiation in zinc oxide thin film system in 1997, the study of zinc oxide material...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C01G9/02B82Y40/00
Inventor 徐春祥戴俊
Owner SOUTHEAST UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap