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Tellurium semiconductor micro-nanometer crystal and preparation method

A micro-nano, semiconductor technology, applied in the field of micro-nano crystals and their preparation, can solve the problems of difficult preparation of three-dimensional superstructure semiconductor micro-nano materials, and achieve the effects of low cost, safe and simple operation, and stable product quality

Active Publication Date: 2012-07-04
WENZHOU UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

At present, research at home and abroad is mainly focused on one-dimensional and two-dimensional tellurium nanostructures, including nanowires, nanorods, nanotubes, nanobelts and nanofilms, and has made great research progress, such as Zhu Junjie invented a A simple method to prepare one-dimensional nanostructured tellurium nanowires (CN1661138A), Yuan Qiuli et al. invented a method for controllable preparation of tellurium nanoparticles, tellurium nanorods (CN101920940A) and rope-shaped tellurium nanocrystals (CN101798069A), but currently There are few reports on the controlled synthesis and performance research of three-dimensional superstructure tellurium micro-nanomaterials. The reason is that compared with the preparation of low-dimensional structure micronanomaterials, the preparation of three-dimensional superstructure semiconductor micronanomaterials is much more difficult. Therefore, It is of great significance to develop a simple and effective new method for preparing the morphology of three-dimensional superstructured tellurium micro-nanomaterials

Method used

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  • Tellurium semiconductor micro-nanometer crystal and preparation method
  • Tellurium semiconductor micro-nanometer crystal and preparation method
  • Tellurium semiconductor micro-nanometer crystal and preparation method

Examples

Experimental program
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Effect test

Embodiment 1

[0025] In a 100ml stainless steel autoclave lined with polytetrafluoroethylene, weigh 0.6mmol (0.43g) of tellurium diethyldithiocarbamate and add it to 20ml of chloroform, then add 1.2mmol of dithiosalicylic acid and 30ml Anhydrous ethanol, after sealing the autoclave, place it at a temperature of 110°C, and react under a pressure of 1.5MPa for 10 hours, then cool the reaction solution to room temperature (25°C), put the reaction solution in a separatory funnel and let it stand for stratification , take the two-phase interface product and centrifuge to obtain a precipitate, that is, a black solid product. The precipitate is washed with high-purity water and absolute ethanol in sequence, and repeated 3 times. The washing solution is filtered, and the filter cake is dried in a vacuum oven for 20 hours to obtain a three-dimensional three-branch Tellurium semiconductor micro-nanocrystals with dendrite morphology 0.5mmol (calculated by the amount of tellurium substance, the same bel...

Embodiment 2

[0027]In a 100ml stainless steel autoclave lined with polytetrafluoroethylene, weigh 0.3mmol (0.122g) of diphenyl tellurium and 0.3mmol (0.11g) of di-tert-butyl tellurium, add 10ml of chloroform and 10ml of carbon disulfide, and then Add 0.6mmol of dithiosalicylic acid and 20ml of absolute ethanol, seal the autoclave and place it at a temperature of 140°C, react under 1MPa pressure for 5 hours, cool to room temperature, and place the reaction solution in a liquid separation Stand in the funnel for stratification, take the two-phase interface product and centrifuge to obtain a precipitate, that is, a black solid product. The precipitate is washed with high-purity water and absolute ethanol for 3 times, and the washing solution is filtered. The filter cake is dried in a vacuum oven. After 20 hours, 1.1 mmol of tellurium semiconductor micro-nanocrystals with three-dimensional three-dendrite morphology were obtained.

Embodiment 3

[0029] In a 100ml stainless steel autoclave lined with polytetrafluoroethylene, weigh 0.6mmol (0.133g) of sodium tellurite, add it to 15ml of chloroform, then add 0.4mmol of citric acid and 0.2mmol of dithiosalicylic acid and 30ml of absolute ethanol, the autoclave was sealed and placed at a temperature of 120°C, and reacted for 15 hours under a pressure of 1.2MPa. After cooling to room temperature, the reaction solution was placed in a separatory funnel and allowed to stand for stratification, and the two-phase interface was taken. The product was centrifuged to obtain a precipitate, that is, a black solid product. The precipitate was washed with high-purity water and absolute ethanol in sequence, and repeated 3 times. The washing liquid was filtered, and the filter cake was dried in a vacuum drying oven for 10 hours to obtain a three-dimensional tridendritic form of tellurium Semiconductor micro-nano crystal 0.48mmol.

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Abstract

The invention discloses a tellurium semiconductor micro-nanometer crystalin a three-dimensional three dentrite shape, which is prepared by the following steps: dissolving tellurium salt in an organic solvent, reacting hermetically for 1-40h at 60-200 DEG C and 0.5-6MPa under effect of a reducing agent; and after reaction, centrifuging the reaction solution, taking precipitate, washing, and drying to obtain the tellurium semiconductor micro-nanometer crystal in a three-dimensional three dentrite shape. The reducing agent is selected from one or a mixture of any two of dithiosalicylic acid, ascorbic acid, citric acid, sodium borohydride or glucose at any proportion. The tellurium micro-nanometer crystal prepared by the invention has the advantages of uniform size distribution, low cost and stable quality of production as well as excellent pyroelectric, photoconductive, polarizing, piezoelectric properties and non-linear optic response and the like. The tellurium semiconductor micro-nanometer crystal in a three-dimensional three dentrite shape can be applied to optical device, micro-electronic and molecular sensitive components and the like.

Description

(1) Technical field [0001] The invention relates to a micro-nano crystal and a preparation method thereof, in particular to a tellurium semiconductor micro-nano crystal with a three-dimensional three-dendrite morphology and a preparation method thereof. (2) Background technology [0002] With the development of modern microelectronics technology, the miniaturization of various optoelectronic devices has put forward higher requirements for material science. Nanomaterial science is one of the most active and hottest subjects in material research. Due to the significant quantum size effect of semiconductor micro-nano materials, their physical and chemical properties have rapidly become one of the most active research fields. Among them, it is very important to obtain neatly arranged, uniformly distributed and highly crystalline micro-nano materials. of. [0003] Elemental tellurium is an elemental semiconductor material with a narrow bandgap (direct forbidden band width 0.32eV...

Claims

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Application Information

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IPC IPC(8): C01B19/02B82Y40/00
Inventor 王舜金辉乐赵岳五
Owner WENZHOU UNIVERSITY
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