Boron-doped stress bar for manufacturing polarization-preserving fiber and manufacturing method for boron-doped stress bar
A polarization-maintaining optical fiber and stress rod technology, applied in the field of boron-doped stress rods, can solve the problems of uneven stress distribution of optical fibers, easy occurrence of panda eyes, low doping concentration, etc., so as to improve fusion splicing efficiency, improve raw material utilization, and improve Effect of Doping Concentration
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Embodiment 1
[0045] Put the cleaned pure quartz liner in the microwave resonant cavity holding furnace, set the high frequency power of the microwave resonant cavity holding furnace to 4.5KW, the temperature in the furnace is 1030-1200°C, and put the pure quartz liner in the microwave resonant cavity Inside, it rotates periodically at a speed of 30 revolutions per minute, and the microwave cavity reciprocates axially relative to the pure quartz liner.
[0046] The mixed gas of silicon tetrachloride, high-purity oxygen and boron trichloride is introduced from one end of the pure quartz liner, wherein the flow of silicon tetraoxide vapor is 700 sccm, the flow of high-purity oxygen is 1750 sccm, and the flow of boron trichloride gas The flow rate is 70sccm ~ 1100sccm, the other end of the pure quartz liner is the discharge end of the mixed gas, and the discharge end is connected to a vacuum pump.
[0047] The pressure inside the pure quartz liner is controlled to be 15mBar, the deposition rat...
Embodiment 2
[0053] The difference between embodiment 2 and embodiment 1 is:
[0054] (1) The temperature inside the microwave resonant cavity holding furnace is 1200°C, and the high-frequency power of the microwave resonant cavity is 18.5KW;
[0055] (2) In the mixed gas, the silicon tetraoxide vapor flow rate is 1900 sccm, the high-purity oxygen flow rate is 3800 sccm, and the boron trichloride flow rate is 900 sccm-1100 sccm;
[0056] (3) The pressure inside the liner is controlled at 15mBar, the deposition rate in the liner is 6.5g / min, the molar ratio of high-purity oxygen to silicon tetroxide is controlled at 2.0, and the ratio of boron trichloride to silicon tetrachloride during the PCVD process deposition The molar ratio is adjusted as the thickness of the deposited layer increases, and the adjustment ratio is controlled at 0.47-0.58;
[0057] (4) When melting and shrinking, the pressure inside the tube is 101375Pa, and the melting temperature is 1900°C. The key indicators of the ...
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