Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of Sm-doped BiFeO3 ferroelectric film on surface of fluorine-doped tin oxide (FTO)/glass substrate

A ferroelectric thin film and substrate surface technology, applied in the field of functional materials, can solve the problems of low dielectric constant of bismuth ferrite materials, large leakage conductance of bismuth ferrite materials, difficulty in observing large remanent polarization values, etc., to improve Effects of ferroelectricity, increased structural distortion, and suppression of volatilization

Inactive Publication Date: 2012-07-04
SHAANXI UNIV OF SCI & TECH
View PDF4 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The problem that has always limited the application of bismuth ferrite materials is: the dielectric constant of bismuth ferrite materials is low, and it is difficult to observe a large remanent polarization value at room temperature, especially polycrystalline bismuth ferrite materials; The leakage conductance is large, and it is difficult to obtain a saturated hysteresis loop

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of Sm-doped BiFeO3 ferroelectric film on surface of fluorine-doped tin oxide (FTO)/glass substrate
  • Preparation method of Sm-doped BiFeO3 ferroelectric film on surface of fluorine-doped tin oxide (FTO)/glass substrate
  • Preparation method of Sm-doped BiFeO3 ferroelectric film on surface of fluorine-doped tin oxide (FTO)/glass substrate

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] Step 1: Select the FTO / glass substrate as the substrate, place the cut FTO / glass substrate in detergent, acetone, and ethanol for 10 minutes for ultrasonic cleaning to remove grease and other impurities on the surface of the FTO / glass substrate, After cleaning, rinse the substrate with a large amount of distilled water, and finally dry it with nitrogen;

[0022] Step 2: Place the clean FTO / glass substrate treated in step 1 in a UV irradiator for 40 minutes to make the surface of the substrate reach "atomic cleanliness", form hydroxyl groups with good hydrophilicity, and improve the substrate's hardness. Hydrophilic, spare;

[0023] Step 3: Fe(NO 3 ) 3 9H 2 O, Bi(NO 3 ) 3 ·5H 2 O and Sm(NO 3 ) 3 ·6H 2 O is dissolved in the mixed solution of ethylene glycol methyl ether and glacial acetic acid with a volume ratio of 2:1 at a molar ratio of 1:0.97:0.03 to obtain a precursor solution with a concentration of each metal ion of 0.3 to 0.9 mol / L, and magnetically stir ...

Embodiment 2

[0026] Step 1: Select the FTO / glass substrate as the substrate, place the cut FTO / glass substrate in detergent, acetone, and ethanol for 10 minutes for ultrasonic cleaning to remove grease and other impurities on the surface of the FTO / glass substrate, After cleaning, rinse the substrate with a large amount of distilled water, and finally dry it with nitrogen;

[0027] Step 2: Place the clean FTO / glass substrate treated in step 1 in a UV irradiator for 40 minutes to make the surface of the substrate reach "atomic cleanliness", form hydroxyl groups with better hydrophilicity, and improve the hydrophilicity of the substrate. Water-based;

[0028] Step 3: Fe(NO 3 ) 3 9H 2 O, Bi(NO 3 ) 3 ·5H 2 O and Sm(NO 3 ) 3 ·6H 2 O is dissolved in the mixed solution of ethylene glycol methyl ether and glacial acetic acid with a volume ratio of 2:1 at a molar ratio of 1:0.94:0.06 to obtain a precursor solution with a concentration of each metal ion of 0.3 to 0.9 mol / L, and the magnetic...

Embodiment 3

[0031] Step 1: Select the FTO / glass substrate as the substrate, place the cut FTO / glass substrate in detergent, acetone, and ethanol for 10 minutes for ultrasonic cleaning to remove grease and other impurities on the surface of the FTO / glass substrate, After cleaning, rinse the substrate with a large amount of distilled water, and finally dry it with nitrogen;

[0032] Step 2: Place the clean FTO substrate in a UV irradiator for 40 minutes to make the surface of the substrate reach "atomic cleanliness", form hydroxyl groups with better hydrophilicity, and improve the hydrophilicity of the substrate;

[0033]Step 3: Fe(NO 3 ) 3 9H 2 O, Bi(NO 3 ) 3 ·5H 2 O and Sm(NO 3 ) 3 ·6H 2 O is dissolved in the mixed solution of ethylene glycol methyl ether and glacial acetic acid with a volume ratio of 2:1 at a molar ratio of 1:0.91:0.09 to obtain a precursor solution with a concentration of each metal ion of 0.3 to 0.9 mol / L, and the magnetic stirring is 0.5 h, to obtain stable B...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Grain sizeaaaaaaaaaa
Login to View More

Abstract

The invention provides a preparation method of a Sm-doped BiFeO3 ferroelectric film on a surface of a fluorine-doped tin oxide (FTO) / glass substrate. The preparation method comprises the steps of: after an FTO / glass substrate is cleaned, using ultraviolet light to irradiate the FTO / glass substrate for 40min, taking bismuth nitrate, ferric nitrate and samarium nitrate as raw materials, dissolving the raw materials in mixed solution formed by ethylene glycol methyl ether and glacial acetic acid, fully agitating till the raw materials are fully dissolved to obtain precursor solution, and magnetically agitating to obtain stable BiFeO3 precursors; and conducting spin coating on the substrate by using the BiFeO3, conducting pretreatment at 350 DEG C to facilitate organic matters to be decomposed, finally annealing and crystallizing at 500 DEG C to 600 DEG C, and repeating the processes for several times till the ferroelectric film with the residual polarization value of preset thickness being 50muC / cm<2> is obtained. The preparation method has the advantages that the required equipment is simple, the experimental condition is easy to reach, the uniformity of the prepared film is good, the doping amount is easy to control and the ferroelectric property of the film can be greatly improved through doping.

Description

technical field [0001] The invention belongs to the field of functional materials and relates to the preparation of Sm-doped BiFeO in functionalized FTO / glass 3 thin film method. Background technique [0002] In recent years, BiFeO 3 As a new type of ferromagnetic electric material, it has aroused great interest. BiFeO has a trigonally twisted simple perovskite structure and simultaneously exhibits ferroelectric order at room temperature (T C =810℃) and G-type antiferromagnetic order (T N =380℃), is one of the few single-phase multiferroic materials. BiFeO 3 Magnetoelectric couplings have extremely important application prospects in information storage, spintronic devices, magnetic sensors, and capacitive-inductive integrated devices. [0003] The problem that has always limited the application of bismuth ferrite materials is: the dielectric constant of bismuth ferrite materials is low, and it is difficult to observe a large remanent polarization value at room temperat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): C03C17/23
Inventor 谈国强程蒙
Owner SHAANXI UNIV OF SCI & TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com