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Photoresist composition

A photoresist and composition technology, applied in optics, optomechanical equipment, photosensitive materials for optomechanical equipment, etc., can solve problems such as producing defective products, improve coating uniformity, and reduce spots Effect

Active Publication Date: 2012-07-11
DONGJIN SEMICHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] In particular, since the surface of the film dries more easily than the inside during vacuum drying, the shape of the pattern often becomes an inverted tapered shape, resulting in defective products in the subsequent process.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～2 and comparative example 1～3

[0052] Use a phenolic resin with a weight ratio of m-cresol:p-cresol of 6:4; mix 2,3,4-trihydroxybenzophenone-1,2-diazidonaphthoquinone in a weight ratio of 5:5 -5-sulfonate and 2,3,4,4'-tetrahydroxybenzophenone-1,2-diazidonaphthoquinone-5-sulfonate photosensitive compound; as a co-solvent Dimethyl 2-methylglutarate; propylene glycol methyl ether acetate (PGMEA), ethyl lactate, and normal butylacetate (normal butylacetate) as a solvent, and the components and contents shown in Table 1 below are uniformly mixed Each component was used to prepare photoresist compositions of Examples and Comparative Examples.

[0053] 【Table 1】

[0054]

experiment example 1

[0055] -Evaluation of thickness uniformity and coating spots

[0056] The photoresist composition slit coating that is used for liquid crystal display device circuit prepared by described embodiment and comparative example is paid on the glass substrate that is attached with molybdenum of width 400mm * length 300mm, then in 0.5 torr (Torr) The substrate was dried under reduced pressure for 60 seconds under the following conditions, and then the substrate was heated and dried at 110° C. for 90 seconds to form a thin film with a thickness of 1.50 μm. Next, the thickness uniformity and coating spot (unevenness) characteristics of the film were measured by the following methods, and the results are shown in Table 2 below.

[0057] (1) Thickness uniformity: measure the thickness 20 times in the width direction and 15 times in the length direction, a total of 300 times, evaluate the maximum thickness and minimum thickness of the photoresist film, and calculate by the following formu...

experiment example 2

[0064] - Pattern shape

[0065] The photoresist compositions for liquid crystal display device circuits prepared in the examples and comparative examples were spin-coated on a 3-inch silicon wafer, and then dried under reduced pressure for 60 seconds under the condition of 0.5 Torr (Torr) , and then heat-dried the substrate at 110° C. for 90 seconds to form a film with a thickness of 1.50 μm.

[0066] After exposure using an exposure machine, it was developed at room temperature for 60 seconds with an aqueous solution containing 2.38% of tetramethylammonium hydroxide to form a pattern. The profile of the formed pattern was observed with SEM. At this time, the evaluation criteria for the pattern shape such as figure 2 , and the results are shown in Table 3.

[0067] 【table 3】

[0068] project

[0069]As shown in the above-mentioned Table 3, compared with Comparative Examples 1 to 3, Examples 1 to 4 using a specific co-solvent were also excellent in pattern shap...

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Abstract

The invention relates to a photoresist composition. More specifically, the invention relates to a photoresist composition containing, by weight, (a) 5 to 30 percents of novolac resin, (b) 2 to 10 percents of di-nitrine photosensitive compound, (c) 1 to 70 percents of dialkyl ether cosolvent, and (d) organic solvent. The photoresist composition does not form an inverted cone shape and has extraordinary coating uniformity, and can prevent the generation of coating spots.

Description

technical field [0001] The present invention relates to a photoresist composition, in particular to a resist composition containing a co-solvent, which has excellent coating uniformity and pattern profile after vacuum drying, and has The excellent ability to suppress spots (unevenness) after coating can be easily applied to actual industrial production, and in large-scale production, it can be better improved by reducing the amount of use and shortening the time required for mass production. working environment. Background technique [0002] Like a liquid crystal display device circuit or a semiconductor integrated circuit, in order to form a fine circuit pattern, first, a photoresist composition is uniformly applied to an insulating film or a metal conductive film already formed on a substrate. Then, the applied photoresist composition is exposed and developed using a mask of a predetermined shape to form a pattern of a predetermined shape. After that, the metal film or t...

Claims

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Application Information

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IPC IPC(8): G03F7/008G03F7/00
CPCG03F7/004G03F7/0045G03F7/022H01L21/027H01L21/0271
Inventor 金升起边滋勋金炳郁金东敏李原荣诸葛银朴柱京朱相一咸先美李斗渊朴一圭郑起和金京浩洪宇成
Owner DONGJIN SEMICHEM CO LTD
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