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Doped ZnO-based sputtering target material and preparation method thereof

A zinc oxide-based, sputtering target technology, which is applied in sputtering coating, metal material coating process, ion implantation plating, etc., can solve the problems of reduced production efficiency, target poisoning, and low target density. Achieve the effect of low cost, easy industrial production, and simple process equipment

Active Publication Date: 2013-10-16
宁夏中色新材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the low density of the target material is easy to "poison" the target material, and the sputtering process cannot be continuous, resulting in the deterioration of the film performance and the reduction of production efficiency

Method used

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  • Doped ZnO-based sputtering target material and preparation method thereof
  • Doped ZnO-based sputtering target material and preparation method thereof
  • Doped ZnO-based sputtering target material and preparation method thereof

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preparation example Construction

[0025] The preparation method of the present invention is completed according to the following steps:

[0026] 1. Solution A: Weigh quantitative metal zinc (≥4N) and dissolve it completely with superior grade pure 1+1 (v / v%) nitric acid and dilute to [Zn 2+ ] concentration is 0.1-3.0mol / L;

[0027] 2. Solution B: according to the ratio of Zn:Al=91.5-98.9:1-7 (at%, atomic percentage), weigh Al(NO 3 ) 3 9H 2 O (excellent grade pure), completely dissolved in absolute ethanol;

[0028] 3. C slurry: take M according to the ratio of Zn: Al: M=91.5-98.9: 1-7: 0.1-1.5 (at%) (M is selected from W, Mo, Nb, Zr, Ce, V One or more metal oxide powders), adding deionized water, in the presence of a dispersant, ball milling for 2-8hr to make a suspension slurry;

[0029] 4. Surfactant solution: weigh relative to Zn 2+ 0.05-0.5% (wt%). ;

[0030] 5. Precipitant solution: according to C Zn / C NH4HCO3 Ratio 1: 1.2-4 (mol / mol) Weigh NH 4 HCO 3 (excellent pure), completely dissolved in...

Embodiment 1

[0045] Weighing: Metal zinc 9800g (≥4N) is completely dissolved with superior grade pure 1+1 (v / v%) nitric acid, and diluted with deionized water to [Zn 2+ ] Concentration is 1.2mol / L, is mixed with zinc salt solution; Weigh Al(NO 3 ) 3 9H 2 O (excellent pure) 1750g, add 10L of absolute ethanol to dissolve completely, and prepare aluminum salt solution; dopant: weigh MoO 2 Add 2L deionized water to 98.7g powder, 0.5g ammonium acrylate dispersant, and ball mill for 8hr to make MoO 2 suspension slurry. Separately prepare surfactant solution: weigh 10g PVP (polyvinylpyrrolidone), dissolve completely with 0.5L absolute ethanol; precipitant solution: weigh NH 4 HCO 3 (Premium pure) 32000g, prepared into a 25% (wt / v%) solution with deionized water. Transfer the zinc salt solution into the reaction kettle, add the aluminum salt solution, MoO 2 Suspend the slurry, stir for 5 minutes, then add surfactant solution, stir for 30 minutes, adjust the temperature of the reaction solut...

Embodiment 2

[0050] Weighing: Metal zinc 9638g (≥4N) is completely dissolved with superior grade pure 1+1 (v / v%) nitric acid, and diluted with deionized water to [Zn 2+ ] Concentration is 1.2mol / L, is mixed with zinc salt solution; Weigh Al(NO 3 ) 3 9H 2 O (excellent grade pure) 1139g, add 10L dehydrated alcohol to dissolve completely, be mixed with aluminum salt solution; Dopant: weigh WO 3 Add 4L of deionized water to 352g of powder, 1g of ammonium acrylate dispersant, and ball mill for 8hr to make WO 3 suspension slurry. Separately prepare surfactant solution: weigh 25g PVP (polyvinylpyrrolidone), dissolve completely with 1L of absolute ethanol; precipitant solution: weigh NH 4 HCO 3 (Excellent pure) 35000g, prepared into a 25% (wt / v%) solution with deionized water. Transfer the zinc salt solution into the reaction kettle, add the aluminum salt solution, WO 3 Suspend the slurry, stir for 5 minutes, then add surfactant solution, stir for 30 minutes, adjust the temperature of the r...

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Abstract

The invention relates to a doped ZnO-based sputtering target material and a preparation method thereof, characterized in that the chemical formula is ZnxAlyMz, wherein Al is the first dopant, the second dopant M is selected from at least one of W, Mo, Nb, Zr, Ce and V, wherein x is more than 91.5 and less than 98.9; y is more than 1 and less than 7; z is more than 1 and less than 1.5 by atom percentage. Compared with the prior art, the invention has the following beneficial effects: the process devices are simple, the cost is low, and industrial production is easy. Compared with single Al2O3 doped AZO target material, the sputtering coating has high visible light transmission (more than or equal to 90%), near infrared light (800-1800nm), high light transmittance (more than or equal to 75%) and improved humidity and heat resistance (60 DEG C, 90% RH) (see Attached Table).

Description

technical field [0001] The invention relates to a doped zinc oxide-based sputtering target material and a preparation method thereof. Background technique [0002] AZO (aluminum-doped zinc oxide) sputtering target is mainly used in the production of TCO film (Transparent condactive oxide, TCO for short). Zinc oxide (Zinc Oxide, ZnO) belongs to N-type II-VI group semiconductor materials, has a hexagonal wurtzite structure, and has a band gap of 3.3eV. Traditionally used in semiconductor and piezoelectric materials. In the application of transparent conductive film, by doping group III elements (aluminum, gallium, indium, etc.), its conductive properties are improved, and its high temperature stability is also increased. Among them, an appropriate amount (1-10 at%) of aluminum oxide doping, that is, AZO, can improve the conductivity of zinc oxide, and become a new material with competitive advantages for preparing TCO thin film products at low cost. There are various prepar...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/08C23C14/34C04B35/453C04B35/624C04B35/64
Inventor 刘孝宁刘秉宁孙本双征卫星杨小林王廷东马建保韩建华
Owner 宁夏中色新材料有限公司