Indirect heating-type synthesis assembly for high-temperature and high-pressure artificial single crystal synthesis by using cubic press
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- 常熟市怡华金刚石有限公司
- Publication Date
- 2014-03-05
- Estimated Expiration
- Not applicable · inactive patent
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Abstract
Description
technical field
[0001] The invention belongs to the technical field of diamond or other single crystal synthesis, and relates to a single crystal synthesis assembly, in particular to an indirect heating synthesis assembly (synthesis block) in the high temperature and high pressure artificial single crystal synthesis of a six-sided top press, which can be It is used for the high-pressure and high-temperature synthesis of diamond in a six-sided top press, and can also be used in the growth of cubic boron nitride, silicon carbide single crystal and gallium nitride single crystal. Background technique
[0002] In the industrial production of artificial diamond, high-purity graphite is generally used as raw material, and alloy catalysts (such as alloys formed by Fe, Ni, Mn, Co, etc.) are added to convert graphite into diamond under high temperature and high pressure. Diamond synthesis usually uses a six-sided top press to provide the high temperature and high pressure required fo...