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Preparation method of high-purity sintered alumina for monocrystal sapphire growth

A high-purity alumina and sintered body technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of low equipment cost and high production efficiency, and achieve low equipment cost, high production efficiency and low defect density. Effect

Inactive Publication Date: 2012-07-25
JINZHOU JINGCHENG NEW ENERGY MATERIAL MFG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a method for preparing a high-purity alumina sintered body for sapphire single crystal growth, which can avoid secondary pollution, and has high production efficiency and low equipment cost; the prepared alumina The sintered body can provide raw materials for the growth of sapphire single crystal by Kyropoulos method, and sapphire crystal with high quality and low defect density can be obtained

Method used

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  • Preparation method of high-purity sintered alumina for monocrystal sapphire growth
  • Preparation method of high-purity sintered alumina for monocrystal sapphire growth
  • Preparation method of high-purity sintered alumina for monocrystal sapphire growth

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Effect test

Embodiment 1

[0027] The entire production process is carried out in a dust-free workshop with a cleanliness level above 1000.

[0028] Take 30kg of high-purity alumina with a purity of 99.999% (the content of impurities Fe3 , Alumina particles with a purity of 99.9996%, packed in polyethylene plastic bags.

[0029] Such as figure 1 , figure 2 As shown, take 3kg of the prepared alumina particles and put them into a material crucible 2 with an inner diameter of 225mm×340mm. The material crucible 2 is a ceramic crucible sintered by 99.99% alumina, and the material crucible 2 is placed in a water-cooled copper crucible. 3, a copper coil 1 of a high-frequency plasma heating device is installed on the water-cooled copper crucible 3, and the high-frequency plasma heating device is composed of a high-frequency power supply 4, a plasma generator 5 and a copper coil 1, wherein the material of the copper coil 1 is copper , the number of turns is 3 turns, and the copper coil 1 is cooled by deionize...

Embodiment 2

[0032] The entire production process is carried out in a dust-free workshop with a cleanliness level above 1000.

[0033] Take 30kg of high-purity alumina with a purity of 99.999% (the content of impurities Fe3 , Alumina particles with a purity of 99.9993%, packed in polyethylene plastic bags.

[0034]Get 3kg of prepared alumina granules and put them into a material crucible 2 with an inner diameter of 225 mm * 340 mm. The material crucible 2 is a ceramic crucible sintered by 99.99% alumina, and the material crucible 2 is placed in a water-cooled copper crucible 3. A copper coil 1 of a high-frequency plasma heating device is installed on the water-cooled copper crucible 3, and the high-frequency plasma heating device is composed of a high-frequency power supply 4, a plasma generator 5 and a copper coil 1, wherein the material of the copper coil 1 is red copper, and the copper coil The number of turns of 1 is 2 turns, and the copper coil 1 is cooled by deionized water with a co...

Embodiment 3

[0037] The entire production process is carried out in a dust-free workshop with a cleanliness level above 1000.

[0038] Take 30kg of high-purity alumina with a purity of 99.999% (the content of impurities Fe3 , Alumina particles with a purity of 99.9997%, packed in polyethylene plastic bags.

[0039] Put 3kg of the prepared alumina particles into a material crucible 2 with an inner diameter of 225mm×340mm. The material crucible 2 is a ceramic crucible sintered with 99.99% alumina, and the material crucible 2 is placed in a water-cooled copper crucible 3. A copper coil 1 of a high-frequency plasma heating device is installed on the water-cooled copper crucible 3, and the high-frequency plasma heating device is composed of a high-frequency power supply 4, a plasma generator 5, and a copper coil 1, wherein the material of the copper coil 1 is red copper, and the copper coil The number of turns of 1 is 1 turn, and the copper coil 1 is cooled by deionized water with a conductivit...

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Abstract

The invention relates to a preparation method of high-purity sintered alumina for monocrystal sapphire growth, which includes the steps: using high-purity alumina as raw materials to prepare alumina granules with a granulator, placing the alumina granules into a containing crucible, and sintering the alumina granules by means of a high-frequency plasma heating device to obtain the high-purity sintered alumina. The method has the advantages that no other impurity is brought in during granulating and sintering of the high-purity alumina, and adding of binder is not needed, so that secondary pollution is avoided; by means of the high-frequency plasma heating device, equipment cost is low, production efficiency is high, and pollution of the alumina by heat insulation materials of a furnace and volatile matters of heating materials is avoided; and the bulk density of the prepared sintered alumina ranges from 3.7g / cm3 to 4.1g / cm3, the purity of the prepared sintered alumina ranges from 99.999% to 99.9999%, kyropoulos growth of monocrystal sapphires is provided with raw materials, and sapphire crystals with high quality and low defect density can be obtained.

Description

technical field [0001] The invention relates to a method for preparing a high-purity alumina sintered body used for growing sapphire single crystal. Background technique [0002] The main component of sapphire is aluminum oxide (Al 2 o 3 ), which is composed of three oxygen atoms and two aluminum atoms covalently bonded, its crystal structure is a hexagonal lattice structure, it has high sound velocity, high melting point (2045 ° C), high temperature resistance, corrosion resistance, high hardness , high light transmittance and other characteristics. And the optical penetration band of sapphire is very wide, it has good light transmission from near ultraviolet light (190nm) to mid-infrared light irradiation, and is widely used in optical components, infrared devices, high-strength laser lens materials and mask materials superior. The lattice constant mismatch rate between the sapphire C-plane and III-V and II-VI deposition films is small, and it meets the requirements of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/10C04B35/622C30B29/20
Inventor 张海霞车永军任雷
Owner JINZHOU JINGCHENG NEW ENERGY MATERIAL MFG