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Formula of GaAs semiconductor material etching liquid

An etchant and semiconductor technology, applied in the chemical field, can solve the problems of uncontrollable corrosion rate, over-corrosion, corrosion and immobility, etc., and achieve the effect of stable corrosion rate, clear edges and corners, and guaranteed accuracy

Inactive Publication Date: 2012-08-08
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The object of the present invention is to provide a formulation of GaAs semiconductor material etching solution to solve the problem of over-corrosion or corrosion immobility caused by uncontrollable corrosion rate in GaAs wet etching

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  • Formula of GaAs semiconductor material etching liquid
  • Formula of GaAs semiconductor material etching liquid
  • Formula of GaAs semiconductor material etching liquid

Examples

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Effect test

no. 1 example

[0032] The invention provides a kind of formula of GaAs semiconductor material etchant, comprising:

[0033] citric acid, hydrogen peroxide and deionized water;

[0034] It is first to mix citric acid and deionized water according to a predetermined ratio, then add hydrogen peroxide and stir evenly.

[0035] Wherein the etching solution is to first put 1g of citric acid crystals into 1ml of deionized water, stir evenly, and then add hydrogen peroxide with a concentration of 30%, the volume of the sum of citric acid crystals and deionized water and hydrogen peroxide The ratio is 66:1, and the proportioning is carried out at normal temperature.

[0036] Take the GaAs substrate, clean the GaAs surface with organic solvent and inorganic solvent to remove various impurities. Wherein the organic cleaning solvent includes acetone, trichlorethylene, ethanol, and the inorganic solvent is HCl. The GaAs sheet was dipped in acetone, trichlorethylene and ethanol in turn, and shaken slig...

no. 2 example

[0038] The present invention provides a kind of formula of GaAs semiconductor material etchant again, comprising:

[0039] phosphoric acid, hydrogen peroxide, and deionized water;

[0040] It is to mix phosphoric acid, hydrogen peroxide and deionized water in a predetermined ratio and stir evenly.

[0041] Wherein the etching solution is to mix the phosphoric acid with a concentration of 98% into the hydrogen peroxide and deionized water with a concentration of 30%, and stir evenly. The volume ratio of the phosphoric acid to hydrogen peroxide and deionized water is 3:1: 200, the ratio is carried out at room temperature.

[0042] Take a GaAs substrate, and use the same organic solvent and inorganic solvent as in the first embodiment to clean the GaAs surface to remove various impurities. The GaAs sheet was dipped in acetone, trichlorethylene and ethanol in turn, and shaken slightly for 3 minutes respectively. Coat the photoresist, and photoetch the desired pattern. Then imm...

no. 3 example

[0044] The present invention also provides a kind of formula of GaAs semiconductor material etchant, comprising:

[0045] Acetic acid, hydrogen peroxide and deionized water;

[0046] It is to mix acetic acid, hydrogen peroxide and deionized water according to a predetermined ratio, and stir evenly.

[0047] Wherein the etching solution is to mix 36% acetic acid with a concentration of 30% hydrogen peroxide and deionized water and stir evenly. The volume ratio of the acetic acid, hydrogen peroxide and deionized water is 5:1:150. The proportioning is carried out at normal temperature.

[0048] Take a GaAs substrate, and use the same organic solvent and inorganic solvent as in the first embodiment to clean the GaAs surface to remove various impurities. The GaAs sheet was dipped in acetone, trichlorethylene and ethanol in turn, and shaken slightly for 3 minutes respectively. Coat the photoresist, and photoetch the desired pattern. Then immerse the GaAs sample in 10% inorganic so...

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Abstract

The invention provides a formula of a GaAs semiconductor material etching liquid. The formula comprises: citric acid, hydrogen peroxide and deionized water. First, citric acid and deionized water are mixed according to a predetermined proportion, and then hydrogen peroxide is added and mixed uniformly. Specifically, the etching liquid is prepared by adding 1g of a citric acid crystal into 1ml of deionized water, stirring them uniformly, and then adding hydrogen peroxide with a concentration of 30%. The volume ratio of the sum of the citric acid crystal and the deionized water to the hydrogen peroxide is 66:1. The use of the citric acid formula provided in the invention can control the etching rate to a GaAs material at 2.0nm / s-2.8nm / s.

Description

technical field [0001] The invention relates to the field of chemical technology, in particular to a formulation of GaAs semiconductor material etching solution. Background technique [0002] With the development of electronic industry technology, the semiconductor industry dominated by silicon is the largest industry in the world. In recent years, semiconductors represented by the III-V compound semiconductor GaAs have attracted a lot of research work due to their high-efficiency transport characteristics and low power consumption brought by heterostructures, in order to achieve production efficiency, yield, and integration. , cost and other aspects of industrial feasibility. [0003] GaAs is a direct bandgap semiconductor material with a relatively small forbidden band width, about 1.43eV. Its electron mobility is very high 8000cm 2 / V.s, the dielectric coefficient is smaller than 12.9. Therefore, carriers are easily conducted in GaAs. GaAs materials have rich propert...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K13/00
Inventor 李炎勇王开友
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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