Novel iridium complex, organic light-emitting device, and image display apparatus
一种有机发光器件、铱络合物的技术,应用在铱络合物领域,能够解决衍生物不具有特性等问题,达到优异发光性能的效果
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Embodiment 1
[0169] Synthesis of exemplary compound pp1-1
[0170] [chemical formula 19]
[0171]
[0172] [chemical formula 20]
[0173]
[0174] [chemical formula 21]
[0175]
[0176] Synthesis of Intermediate 1-2
[0177] 40.0 g (216.9 mmol) of compound 1-1 and 1.5 g (7.88 mol) of copper(I) chloride were dissolved in 150 ml of dehydrated tetrahydrofuran. 210 ml (420.0 mmol) of tert-butylmagnesium chloride (23% tetrahydrofuran solution) was added dropwise to the solution at -5°C. After the dropwise addition was complete, the solution was stirred at 0°C for three hours. 30ml of water were added to the solution. After the reaction was complete, the solution was filtered through Celite. The organic layer was extracted with ethyl acetate, dried over anhydrous sodium sulfate, and concentrated. The concentrate was purified by a silica gel column (developing solvent: heptane / ethyl acetate=4 / 1) to prepare 41.2 g (yield 83.3%) of Compound 1-2.
[0178] Synthesis of Intermediates 1...
Embodiment 2
[0213] An organic light emitting device was fabricated in the following manner.
[0214] An indium tin oxide (ITO) film having a thickness of 120 nm was formed as an anode on a glass substrate by sputtering. This substrate was used as a transparent conductive support substrate. The transparent conductive support substrate was ultrasonically cleaned in acetone, then in isopropanol (IPA), washed in boiling IPA, and dried. The transparent conductive support substrate was then subjected to UV / ozone cleaning.
[0215] A 0.3% by weight chloroform solution of Compound 2-1 described below was spin-coated on this substrate at 1000 rpm for 40 seconds to form a hole injection layer having a thickness of 30 nm. Compound 2-2 described below was then deposited by a vacuum evaporation method to form a hole transport layer having a thickness of 20 nm. In vacuum evaporation, the vacuum degree is 1.0x10 -4 Pa, and the deposition rate is 0.1 nm / sec.
[0216] On the hole transport layer, the...
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