Infrared detector manufacturing method based on compound sacrificial layers

Abstract

The invention discloses a method utilizing compound sacrificial layers to manufacture an infrared detector. The method comprises sequentially enabling a metal layer, a first polyimide sacrificial layer, a second amorphous silicon sacrificial layer and through holes formed by imaging of the sacrificial layers to be arranged on a complementary metal-oxide-semiconductor (CMOS) silicon substrate; in a laminating mode, manufacturing a structure layer and contact holes formed by imaging; manufacturing a sensitive layer, a metal electrode layer and a release protecting layer, and imaging the sensitive layer, the electrode layer and a microbridge structure. When the sacrificial layers are released, first the second sacrificial layer is released, and then the first sacrificial layer is released. Compared with the prior art, the infrared detector manufacturing method effectively enables two kinds of different sacrificial layers to be effectively utilized, the organic sacrificial layer can be utilized to carry out planarization on the surface of a CMOS, the adhesion between the surface of the CMOS and metal is improved, and the inorganic sacrificial layer is utilized to control volatility of polyimide so as to be more compatible with the CMOS process.

Description

technical field [0001] The invention relates to the field of infrared detectors, in particular to an uncooled infrared detector processing method using different materials to form a composite sacrificial layer. Background technique [0002] Uncooled infrared detectors have been used in various military and civilian fields, such as automotive night vision systems, weapon sights, power testing instruments, and crowd monitoring facilities in important places, due to their advantages of working at room temperature, light size, and relatively low cost. etc. are widely used. [0003] At present, the mainstream uncooled infrared detector is Microbolometer (Microbolometer) technology, which is a device that combines CMOS readout circuit and microelectromechanical system (MEMS) processing. The commonly used structure is to manufacture a heat-insulating micro-bridge structure integrated with the CMOS substrate monomer by using the surface micromachining process of the sacrificial lay...

AI Technical Summary

Problems solved by technology

Therefore, the detector manufacturing process using the polyimide sacrificial layer process cannot be fully compatible with CMOS production

However, the dielectric sacrificial layer is often deposited on the surface of CMOS, which cannot achieve the function of planarization; or there are shortcomings such as poor adhesion to the metal layer on the substrate surface, which will cause peeling in the subsequent process.

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