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Self-closed silicon oxide nano pore embedded into monocrystalline silicon and preparation method thereof

A technology of silicon oxide and single crystal silicon, applied in the direction of silicon oxide, chemical instruments and methods, nanotechnology, etc., can solve the problems of poor hydrophilicity of nanopores, achieve good integration effect, and simple production method

Inactive Publication Date: 2012-10-10
SICHUAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Rajendra Kumar (Nanotechnology 16 (2005) 1697–1700) reported the preparation of silicon oxide nanopores by thermal oxidation of porous silicon arrays. The nanopores prepared by this method are not very hydrophilic and require high temperature oxidation

Method used

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  • Self-closed silicon oxide nano pore embedded into monocrystalline silicon and preparation method thereof
  • Self-closed silicon oxide nano pore embedded into monocrystalline silicon and preparation method thereof
  • Self-closed silicon oxide nano pore embedded into monocrystalline silicon and preparation method thereof

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preparation example Construction

[0035] The method for preparing the above-mentioned self-sealing silicon oxide nanopores embedded in monocrystalline silicon comprises the following steps:

[0036] Step 1. Clean the substrate, ultrasonically clean the silicon wafer with acetone, ethanol, and deionized water in sequence, take it out and dry it;

[0037] Step 2. Install the substrate, install the silicon wafer into the electrochemical corrosion tank, the corrosion tank is open, the polished side faces into the tank, and keeps light from entering, the back side faces outward, pad the graphite sheet or metal sheet and lead out the electrode wiring;

[0038] Step 3, prepare the solution, mix the concentrated HF acid and the organic solvent in a volume ratio of 1:1 to 1:1.5, wherein the organic solvent can be one of methanol, ethanol, propanol or isopropanol;

[0039] Step 4. Connect to the power supply, pour the prepared mixed solution into the corrosion tank, the polished surface of the silicon wafer is in contac...

Embodiment 1

[0046] The preparation method is as follows:

[0047] Step 1. Clean the substrate, ultrasonically clean the 1 to 10 Ωcm monocrystalline silicon wafer with acetone, ethanol, and deionized water in sequence, take it out and dry it;

[0048] Step 2. Install the substrate, install the silicon wafer into the electrochemical corrosion tank, the corrosion tank is open, the polished side faces into the tank, and keeps light from entering, the back side faces outward, pad the graphite sheet or metal sheet and lead out the electrode wiring;

[0049] Step 3, prepare solution, mix concentrated HF acid and ethanol by volume ratio of 1:1;

[0050] Step 4. Connect the power supply, pour the prepared mixed solution into the corrosion tank, the polished surface of the silicon wafer is in contact with the solution, insert a carbon rod into the solution as an electrode and connect it to the anode, and the electrode on the back of the silicon wafer is connected to the cathode;

[0051] Step 5: C...

Embodiment 2

[0056] Step 1. Clean the substrate, ultrasonically clean the 20 to 25 Ωcm single crystal silicon wafer with acetone, ethanol and deionized water respectively, take it out and dry it;

[0057] Step 2. Install the substrate, install the silicon wafer into the electrochemical corrosion tank, the corrosion tank is open, the polished side faces into the tank, and keeps light from entering, the back side faces outward, pad the graphite sheet or metal sheet and lead out the electrode wiring;

[0058] Step 3, prepare the solution, mix the concentrated HF acid and isopropanol in a volume ratio of 1:1.2;

[0059] Step 4. Connect to the power supply, pour the prepared mixed solution into the corrosion tank, the polished surface of the silicon wafer is in contact with the solution, insert a carbon rod or platinum wire into the solution as an electrode and connect it to the anode, and the electrode on the back of the silicon wafer is connected to the cathode;

[0060] Step 5. Etch the subs...

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Abstract

The invention discloses a self-closed silicon oxide nano pore embedded into monocrystalline silicon and a preparation method thereof. Cylindrical silicon oxide is formed in a monocrystalline silicon film substrate and closes a straight hole cavity, and the surface is coated with silicon oxide. Firstly, self-closed porous silicon is prepared by using an electrochemical etching method, and then is slowly oxidized in the presence of magnesium and water to obtain the self-closed silicon oxide nano pore embedded into the monocrystalline silicon. The silicon oxide nano pore is integrated with silicon and is simple to prepare.

Description

technical field [0001] The invention belongs to the field of making nanostructures, and in particular relates to a silicon oxide nanopore and a preparation method thereof. Background technique [0002] Silica nanopores have potential application prospects in the fields of catalysis, separation, coating, and microelectronics. However, since the silica micropores prepared in the solution will shrink after air-drying, the submicron-sized silica nanopores Preparation still has some difficulties. In 1997, Velev reported a method for preparing submicron silicon oxide nanopores in the journal Nature. Most of the silicon oxide nanopores reported in the literature are messy porous structures, and only a few literatures report the silicon oxide nanometer straight pore structure, especially the submicron straight pore structure. Rajendra Kumar (Nanotechnology 16 (2005) 1697–1700) reported the preparation of silicon oxide nanopores by thermal oxidation of porous silicon arrays. The na...

Claims

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Application Information

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IPC IPC(8): C01B33/113B82Y40/00C30B33/10C30B33/00C25F3/12
Inventor 展长勇邹宇刘波任丁林黎蔚
Owner SICHUAN UNIV
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