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Method for preparing SnS2/SnO2 composite photocatalyst material of numismatics-shaped hollow structure

A composite photocatalyst technology, applied in physical/chemical process catalysts, chemical instruments and methods, chemical/physical processes, etc., can solve problems such as compound semiconductor materials that have not yet been seen, and achieve excellent heterojunction structure, large specific surface area, cheap effect

Inactive Publication Date: 2012-11-14
YANGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, so far, no one-step in situ chemical method has been used to prepare ancient coin-shaped hollow SnS 2 / SnO 2 Research Report on Compound Semiconductor Materials

Method used

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  • Method for preparing SnS2/SnO2 composite photocatalyst material of numismatics-shaped hollow structure
  • Method for preparing SnS2/SnO2 composite photocatalyst material of numismatics-shaped hollow structure
  • Method for preparing SnS2/SnO2 composite photocatalyst material of numismatics-shaped hollow structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] (1) Add 5 mmol of SnCl 4 ·5H 2 O was dissolved in 40 mL of acetic acid (10%, volume ratio) aqueous solution; (2) 10 mmol of thiourea powder was added to the SnCl prepared in step (1) 4 ·5H 2 O acetic acid aqueous solution, stirring and dissolving; (3) Put the reaction solution prepared in step (2) into a polytetrafluoroethylene-lined autoclave, seal it and place it in an electric oven, heat at 180°C for 12 hours, stop After heating, cool down to room temperature naturally; (4) Suction filter the precipitate obtained in step (3), wash it with deionized water several times, and then dry it in a vacuum drying oven at 100°C for 3 hours to obtain the coin-shaped hollow structure SnS 2 / SnO 2 Composite photocatalyst materials.

[0024] Such as figure 1 Shown:

[0025] X-ray powder diffractometer (XRD, Cu K α radiation, λ=1.5406?) to determine the crystal phase of the prepared material; the test results show that the hexagonal SnS phase also appears in the XRD pattern ...

Embodiment 2

[0029] (1) Add 5 mmol of SnCl 4 ·5H 2 O was dissolved in 40 mL of acetic acid (10%, volume ratio) aqueous solution; (2) 14 mmol of thiourea powder was added to the SnCl prepared in step (1) 4 ·5H 2 O acetic acid aqueous solution, stirring and dissolving; (3) Put the reaction solution prepared in step (2) into a polytetrafluoroethylene-lined autoclave, seal it and place it in an electric oven, heat at 180°C for 12 hours, stop After heating, cool down to room temperature naturally; (4) Suction filter the precipitate obtained in step (3), wash it with deionized water several times, and then dry it in a vacuum drying oven at 100°C for 3 hours to obtain the coin-shaped hollow structure SnS 2 / SnO 2 Composite photocatalyst materials.

[0030] Such as image 3 Shown:

[0031] X-ray powder diffractometer (XRD, Cu K α radiation, λ=1.5406?) to determine the crystal phase of the prepared material; the test results show that the hexagonal SnS phase also appears in the XRD pattern ...

Embodiment 3

[0035] (1) Add 5 mmol of SnCl 4 ·5H 2 O was dissolved in 40 mL of acetic acid (10%, volume ratio) aqueous solution; (2) 15 mmol of thiourea powder was added to the SnCl prepared in step (1) 4 ·5H 2 O acetic acid aqueous solution, stirring and dissolving; (3) Put the reaction solution prepared in step (2) into a polytetrafluoroethylene-lined autoclave, seal it and place it in an electric oven, heat at 180°C for 12 hours, stop After heating, cool down to room temperature naturally; (4) Suction filter the precipitate obtained in step (3), wash it with deionized water several times, and then dry it in a vacuum drying oven at 100°C for 3 hours to obtain the coin-shaped hollow structure SnS 2 / SnO 2 Composite photocatalyst materials.

[0036] Such as Figure 5 Shown:

[0037] X-ray powder diffractometer (XRD, Cu K α radiation, λ=1.5406?) to determine the crystal phase of the prepared material; the test results show that the hexagonal SnS phase also appears in the XRD pattern...

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Abstract

The invention discloses a method for preparing SnS2 / SnO2 composite photocatalyst material of a numismatics-shaped hollow structure, and belongs to the technical field of novel photocatalyst material production. The method comprises the following steps of: adding thiourea powder into a stannic chloride acetic acid water solution, and stirring for dissolving the powder so as to prepare a reaction liquid; subsequently putting the reaction liquid into a high pressure kettle in which the polytetrafluoroethylene is used as a lining, sealing and reacting at an environmental temperature not less than 180 DEG C; after the reaction is ended, cooling naturally to room temperature so as to obtain the sediment; and finally extracting and filtering the sediment, washing with deionized water and drying in vacuum so as to obtain the composite photocatalyst material of the numismatics-shaped hollow structure. The raw material is low in price and easy to obtain; the toxic gas H2S, the vacuum environment and the inert gas shielding are unnecessary; a template and a surface active agent are not needed to be added; the production equipment, the process condition and steps are relatively simple; and moreover a product is used for making the controllable SnS2 / SnO2 composite material which is of a numismatics-shaped hollow structure and has the advantages of larger specific surface area and heterojunction structure and excellent visible light catalysis property.

Description

technical field [0001] The invention belongs to the technical field of novel photocatalyst material production. Background technique [0002] Tin sulfide (SnS 2 ) is a CdI 2 A layered semiconductor material with a bandgap of about 2.2 eV. SnS 2 It has the characteristics of moderate price, non-toxicity, good chemical and photochemical stability, and high photocatalytic activity. It is a visible light-responsive photocatalyst with industrial application prospects. Tin oxide (SnO 2 ) is a stable wide band gap (band gap value is about 3.6 eV) oxide semiconductor, and SnS 2 have a matching band structure. According to the semiconductor energy band matching theory, if SnS 2 and SnO 2 Combining with appropriate composition and structure can not only improve the SnS 2 Separation efficiency of photogenerated electrons and holes in the middle, reducing the recombination of the two; and can sensitize SnO 2 , thereby enhancing its visible light catalytic activity. Therefore,...

Claims

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Application Information

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IPC IPC(8): B01J27/04B01J35/02
Inventor 张永才杨敏郭天虹堵锡华戴伟民杭柯潘跃权
Owner YANGZHOU UNIV
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