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CIGS thin film type solar cell device and preparation method thereof

A solar cell, copper indium gallium selenide technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as difficult crystallization quality copper indium gallium selenide light absorption layer, affecting battery conversion efficiency, etc.

Active Publication Date: 2012-11-14
THE CHINESE UNIVERSITY OF HONG KONG +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Note that this temperature is lower than the optimum growth temperature of the light absorption layer of traditional CIGS cells, 560-650°C, so it is difficult to crystallize a CIGS light absorption layer with good quality, which also affects the conversion efficiency of the cell

Method used

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  • CIGS thin film type solar cell device and preparation method thereof
  • CIGS thin film type solar cell device and preparation method thereof
  • CIGS thin film type solar cell device and preparation method thereof

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preparation example Construction

[0033] The preparation method of the CIGS thin-film solar cell of an embodiment, comprises the steps:

[0034] Step S1: attaching a graphene film on the substrate as a back electrode layer. Specifically include the following steps:

[0035] Step S11, using chemical vapor deposition (CVD) to prepare single-layer graphene on the metal substrate: under high temperature conditions, by chemical vapor deposition, in carbon source gas, H 2 or H 2 In a mixed gas atmosphere with Ar, a single-layer graphene film with low sheet resistance and high transmittance was prepared using a metal substrate as a catalyst.

[0036] For example, it can be realized by but not limited to the following steps: put the cleaned Cu sheet into the CVD furnace, turn on the mechanical pump, and evacuate to the background vacuum (about a dozen mTorr); adjust the flow meter to feed a certain amount of H 2 , such as 20sccm, and adjust the air pressure regulating valve to maintain the chamber air pressure at a...

Embodiment 1

[0051] 1. Put the cleaned Cu chip into the CVD furnace, turn on the mechanical pump, and pump air until the background vacuum is 13mTorr. Adjust the flow meter into 20sccm H 2 , and adjust the air pressure regulating valve to maintain the cavity air pressure at about 300mTorr. Then the temperature is raised to 1000°C, and high-temperature hydrogen annealing is performed at this temperature for about 25 minutes. Open CH at this time 4 Flow control, so that the flow is 10sccm, adjust H 2 The flow rate is 5 sccm, the working air pressure is about 350mTorr at this time, and the heating temperature is kept constant, and the whole process lasts for about 30 minutes. After the end, the temperature was lowered, and the sample was taken out, that is, a single-layer graphene was prepared on the Cu substrate.

[0052] 2. Coating a layer of PMMA on the surface of single-layer graphene on Cu substrate by spin coating method. Put the non-adhesive side of the uniformly glued Cu sheet in...

Embodiment 2

[0056] 1. Put the cleaned Cu chip into the CVD furnace, turn on the mechanical pump, and pump air until the background vacuum is 13mTorr. Adjust the flow meter into 20sccm H 2 , and adjust the air pressure regulating valve to maintain the cavity air pressure at about 300mTorr. Then the temperature is raised to 1000°C, and high-temperature hydrogen annealing is performed at this temperature for about 25 minutes. Open CH at this time 4 Flow control, so that the flow is 10sccm, adjust H 2 The flow rate is 5 sccm, the working air pressure is about 350mTorr at this time, and the heating temperature is kept constant, and the whole process lasts for about 30 minutes. After the end, the temperature was lowered, and the sample was taken out, that is, a single-layer graphene was prepared on the Cu substrate.

[0057] 2. Coating a layer of PMMA on the surface of single-layer graphene on Cu substrate by spin coating method. Put the non-adhesive side of the uniformly glued Cu sheet in...

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Abstract

The invention relates to a CIGS(Cu, Im, Ga, Se) thin film type solar cell which comprises a substrate, a back electrode layer, a CIGS light adsorbing layer, a buffer layer, a barrier layer and a conductive window layer which are sequentially arranged in a cascading manner. The back electrode layer is a graphene thin film. By replacing the conventional Mo back electrode with the graphene thin film which has excellent electrical properties, Mo material is saved, and since the substrate and the back electrode are pervious to light, the upper surface and the lower surface of the cell can both adsorb light, and the luminous flux in the cell is increased. Therefore, more electron hole pairs can be produced, and therefore the CIGS thin film type solar cell device can still have high photoelectric conversion efficiency with a relatively thin light adsorption layer. In addition, the invention further relates to a preparation method of the CIGS thin film type solar cell device.

Description

【Technical field】 [0001] The invention relates to the field of thin-film solar cells, in particular to a copper indium gallium selenium thin-film solar cell device and a preparation method thereof. 【Background technique】 [0002] Copper indium gallium selenide (CIGS) thin-film photovoltaic cells have the advantages of low cost, high efficiency, and good stability, and are recognized as the second-generation thin-film solar cells with the most development and market potential. People's research on it began in the early 1980s. After more than 30 years of development, the theoretical research and preparation process of CIGS thin-film solar cells have achieved gratifying results. The highest laboratory photoelectric conversion efficiency of CIGS thin-film solar cells reaches 20.3%, which is currently the thin-film photovoltaic cell with the highest conversion efficiency. [0003] In order to improve the light utilization rate of thin-film batteries, improve photoelectric conver...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0749H01L31/0224H01L31/0352H01L31/18
CPCY02E10/50Y02E10/541Y02P70/50
Inventor 尹苓肖旭东张康
Owner THE CHINESE UNIVERSITY OF HONG KONG