Method for preparing highly ordered CuInS2 epitaxial film by using a sputtering method
A technology of epitaxial thin film and sputtering method, which is applied in the direction of sputtering coating, chemical instruments and methods, and final product manufacturing, etc. It can solve problems such as complicated process, difficult V group elements, and long-whisker defect polycrystalline growth, and achieves The effect of simple process and low equipment requirements
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Embodiment 1
[0021] CuInS 2 Ceramic targets are prepared by the following methods:
[0022] (1) Weigh a certain amount of purchased commercial CuInS 2 Powder (purity is 99.999%, provided by Sichuan Apollo Solar Technology Co., Ltd.), put into the ball mill jar, add deionized water, the amount of deionized water is CuInS 2 80~100% of the total weight of the powder, mixed and ball milled;
[0023] (2) Put the ball-milled powder into a vacuum drying oven for drying. The temperature during vacuum drying is 60-100°C. Add deionized water to the powder and grind it evenly. The amount of deionized water is CuInS after drying. 2 8~12% of the powder, mix well to obtain a mixture, place the mixture in a mold, and press it into the required ceramic green sheet;
[0024] (3) Put the ceramic green sheet into a vacuum tube furnace and heat it to 920°C~980°C at a heating rate of 200°C / h for 1h~2h for sintering, then cool down to room temperature naturally with the furnace. Prepared CuInS 2 XRD-θ-2θ t...
Embodiment 2
[0028] CuInS 2 The preparation method of the ceramic target is the same as in Example 1.
[0029] Using C-axis oriented sapphire as the substrate, the CuInS 2 The ceramic target was cleaned with acetone, absolute ethanol, and deionized water in an ultrasonic cleaner for 10 minutes at a working frequency of 40 kHz, and the cleaned CuInS 2 The target and substrate were placed on the target stage and the sample stage respectively and loaded into a vacuum chamber, and the distance between the target stage and the sample stage was adjusted to 60mm, and then the substrate growth temperature was 500°C and the laser pulse energy was 150mJ using pulsed laser deposition equipment. CuInS was prepared under the conditions of pulse laser frequency 5Hz, sample stage and target stage rotation speeds of 10r / min and 5r / min, and deposition time of 30min. 2 epitaxial film.
[0030] CuInS 2 The XRD-θ-2θ test of the epitaxial film is as follows figure 2As shown, the XRD-rocking curve test is...
Embodiment 3
[0032] CuInS 2 The preparation method of the ceramic target is the same as in Example 1.
[0033] Using C-axis oriented sapphire as the substrate, speaking CuInS 2 The ceramic target was cleaned with acetone, absolute ethanol, and deionized water in an ultrasonic cleaner for 10 minutes at a working frequency of 40 kHz, and the cleaned CuInS 2 The target and substrate were placed on the target stage and the sample stage respectively and loaded into a vacuum chamber, and the distance between the target stage and the sample stage was adjusted to 60mm, and then the substrate growth temperature was 700°C and the laser pulse energy was 150mJ using pulsed laser deposition equipment. CuInS was prepared under the conditions of pulse laser frequency 5Hz, sample stage and target stage rotation speeds of 10r / min and 5r / min, and deposition time of 30min. 2 epitaxial film.
[0034] CuInS 2 The XRD-θ-2θ test of the epitaxial film is as follows figure 2 As shown, the XRD-rocking curve t...
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