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A kind of p-type doped polymer solar cell and preparation method thereof

A solar cell and polymer technology, applied in the field of electrochemistry, can solve problems such as unfavorable solar cell stability, restricting commercial development, and complex preparation processes, and achieves improved stability and energy conversion efficiency, improved hole injection efficiency, and reduced cost effect

Active Publication Date: 2016-04-13
OCEANS KING LIGHTING SCI&TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Among them, the transmission and collection of charges directly affect the photoelectric conversion efficiency of the final battery. The collection of charges is mainly realized by injecting electrons and holes from the active layer into the electrodes, and the buffer layer plays a very important role. , because the electron buffer layer is generally a metal compound (such as LiF), it is easy to cause the energy band between the electrode and the active layer to bend, so that the electron injection barrier is lowered, and the electron injection efficiency is easily improved, while the hole buffer layer is generally made of poly3, The aqueous solution of 4-ethyldioxythiophene (PEDOT) and polybenzenesulfonate (PSS), which is an acidic substance, and because polymer solar cells generally use metal semiconductors (such as ITO) as anodes, and then Spin-coat PEDOT solution on it. Therefore, the acidic solution is easy to corrode ITO, which is not conducive to the stability of solar cells and damages the anode. In addition, the preparation process of PEDOT is complicated and the cost is high, which restricts the commercial development in the future.

Method used

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  • A kind of p-type doped polymer solar cell and preparation method thereof
  • A kind of p-type doped polymer solar cell and preparation method thereof
  • A kind of p-type doped polymer solar cell and preparation method thereof

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preparation example Construction

[0031] The preparation method of the above-mentioned p-type doped polymer solar cell, such as figure 2 As shown, the process steps are as follows:

[0032] S1. Ultrasonic cleaning the anode base in detergent, deionized water, acetone, ethanol, and isopropanol to remove organic pollutants on the surface. After cleaning, it is treated with oxygen plasma, and then the power is 10-50W Oxygen plasma treatment time is 5-15min, or UV-ozone treatment 5-20min;

[0033] S2. Evaporating a p-type doped layer with a thickness of 5-80 nm on the anode surface of the anode substrate;

[0034] S3, spin-coating an active layer with a thickness of 80-300 nm on the surface of the p-type doped layer, followed by drying;

[0035] S4. An electron buffer layer with a thickness of 0.5-10 nm is evaporated on the surface of the active layer; then a cathode layer with a thickness of 80-300 nm is evaporated on the surface of the electron buffer layer; after the process steps are completed, the p-type d...

Embodiment 1

[0040] The structure of the p-type doped polymer solar cell in this embodiment is:

[0041] ITO substrate / F4-TCNQ: 1T-NATA / P3HT:PCBM / LiF / Al.

[0042] The preparation process of the p-type doped polymer solar cell is as follows:

[0043] 1. Clean the ITO substrate with detergent, deionized water, acetone, ethanol, and isopropanol in sequence, and ultrasonically clean for 15 minutes each to remove organic pollutants on the glass surface. After cleaning, clean the ITO layer of the ITO substrate with power Oxygen plasma surface treatment at 50W for 5 minutes;

[0044] 2. Evaporate a p-type doped layer with a thickness of 40nm on the ITO surface of the ITO substrate, and dope it into 1T-NATA with F4-TCNQ, that is, the doping ratio of F4-TCNQ: 1T-NATA; F4-TCNQ 2%;

[0045] 3. Spin-coat the P3HT:PCBM chlorobenzene solution system on the surface of the p-type doped layer. After the spin coating, anneal at 70°C for 15 minutes to obtain an active layer with a thickness of 100nm; amon...

Embodiment 2

[0056] The structure of the p-type doped polymer solar cell in this embodiment is:

[0057] AZO substrate / F4-TCNQ:NATA / MDMO-PPV:PCBM / Cs 2 CO 3 / Pt.

[0058] The preparation process of the p-type doped polymer solar cell is as follows:

[0059] 1. Clean the AZO substrate with detergent, deionized water, acetone, ethanol, and isopropanol in sequence, and ultrasonically clean each time for 15 minutes to remove organic pollutants on the glass surface. Oxygen plasma surface treatment under 10W condition for 15min;

[0060] 2. Evaporate a p-type doped layer with a thickness of 80nm on the AZO surface of the AZO substrate, and dope it into NATA with F4-TCNQ, that is, F4-TCNQ: NATA; the doping ratio of F4-TCNQ is 0.5%;

[0061] 3. Spin-coat the MDMO-PPV:PCBM toluene solution system on the surface of the p-type doped layer. After the spin coating, anneal at 70°C for 5 minutes to obtain an active layer with a thickness of 300nm; among them, MDMO-PPV:PCBM In the toluene solution sys...

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Abstract

The invention belongs to the field of electrochemistry, in particular discloses a P type doped polymer solar battery. The P type doping polymer solar battery is of a lamellar structure, the lamellar structure sequentially includes an anode substrate, a P type doped layer, an active layer, an electronic buffer layer and a cathode layer. According to the P type doped polymer solar battery disclosed by the invention, the injection efficiency of a hole is increased in such a way that a neutral P type doped material is used as a hole buffer layer; the corrosion of the hole buffer layer on an anode is effectively prevented, and film thickness can be more accurately controlled; and the cost is reduced, and the purpose of increasing the stability and the energy conversion efficiency of the P type doped polymer solar battery is achieved.

Description

technical field [0001] The invention relates to the field of electrochemistry, in particular to a p-type doped polymer solar cell and a preparation method thereof. Background technique [0002] In 1982, Weinberger et al. studied the photovoltaic properties of polyacetylene and produced the first real solar cell, but the photoelectric conversion efficiency at that time was extremely low (10 -3 %). Immediately afterwards, Glenis and others produced various polythiophene solar cells, but the problems they all faced at that time were extremely low open circuit voltage and photoelectric conversion efficiency. It was not until 1986 that C.W.Tang et al. introduced p-type semiconductor and n-type semiconductor into the double-layer structure device for the first time, which greatly improved the photocurrent. Since then, taking this work as a milestone, organic p-type doped polymerization Bio solar cells are booming. [0003] In 1992, Sariciftci et al. found that there was a pheno...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCY02E10/549Y02P70/50
Inventor 周明杰王平黄辉冯小明
Owner OCEANS KING LIGHTING SCI&TECH CO LTD