A kind of p-type doped polymer solar cell and preparation method thereof
A solar cell and polymer technology, applied in the field of electrochemistry, can solve problems such as unfavorable solar cell stability, restricting commercial development, and complex preparation processes, and achieves improved stability and energy conversion efficiency, improved hole injection efficiency, and reduced cost effect
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[0031] The preparation method of the above-mentioned p-type doped polymer solar cell, such as figure 2 As shown, the process steps are as follows:
[0032] S1. Ultrasonic cleaning the anode base in detergent, deionized water, acetone, ethanol, and isopropanol to remove organic pollutants on the surface. After cleaning, it is treated with oxygen plasma, and then the power is 10-50W Oxygen plasma treatment time is 5-15min, or UV-ozone treatment 5-20min;
[0033] S2. Evaporating a p-type doped layer with a thickness of 5-80 nm on the anode surface of the anode substrate;
[0034] S3, spin-coating an active layer with a thickness of 80-300 nm on the surface of the p-type doped layer, followed by drying;
[0035] S4. An electron buffer layer with a thickness of 0.5-10 nm is evaporated on the surface of the active layer; then a cathode layer with a thickness of 80-300 nm is evaporated on the surface of the electron buffer layer; after the process steps are completed, the p-type d...
Embodiment 1
[0040] The structure of the p-type doped polymer solar cell in this embodiment is:
[0041] ITO substrate / F4-TCNQ: 1T-NATA / P3HT:PCBM / LiF / Al.
[0042] The preparation process of the p-type doped polymer solar cell is as follows:
[0043] 1. Clean the ITO substrate with detergent, deionized water, acetone, ethanol, and isopropanol in sequence, and ultrasonically clean for 15 minutes each to remove organic pollutants on the glass surface. After cleaning, clean the ITO layer of the ITO substrate with power Oxygen plasma surface treatment at 50W for 5 minutes;
[0044] 2. Evaporate a p-type doped layer with a thickness of 40nm on the ITO surface of the ITO substrate, and dope it into 1T-NATA with F4-TCNQ, that is, the doping ratio of F4-TCNQ: 1T-NATA; F4-TCNQ 2%;
[0045] 3. Spin-coat the P3HT:PCBM chlorobenzene solution system on the surface of the p-type doped layer. After the spin coating, anneal at 70°C for 15 minutes to obtain an active layer with a thickness of 100nm; amon...
Embodiment 2
[0056] The structure of the p-type doped polymer solar cell in this embodiment is:
[0057] AZO substrate / F4-TCNQ:NATA / MDMO-PPV:PCBM / Cs 2 CO 3 / Pt.
[0058] The preparation process of the p-type doped polymer solar cell is as follows:
[0059] 1. Clean the AZO substrate with detergent, deionized water, acetone, ethanol, and isopropanol in sequence, and ultrasonically clean each time for 15 minutes to remove organic pollutants on the glass surface. Oxygen plasma surface treatment under 10W condition for 15min;
[0060] 2. Evaporate a p-type doped layer with a thickness of 80nm on the AZO surface of the AZO substrate, and dope it into NATA with F4-TCNQ, that is, F4-TCNQ: NATA; the doping ratio of F4-TCNQ is 0.5%;
[0061] 3. Spin-coat the MDMO-PPV:PCBM toluene solution system on the surface of the p-type doped layer. After the spin coating, anneal at 70°C for 5 minutes to obtain an active layer with a thickness of 300nm; among them, MDMO-PPV:PCBM In the toluene solution sys...
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