Integrated manufacturing method of silicon base plate and copper micro heat pipe of LED (light emitting diode) apparatus

A technology for LED devices and manufacturing methods, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as copper layer thickness, and achieve the effects of small overall thermal resistance, improved reliability and life, and stable heat transfer

Inactive Publication Date: 2012-12-12
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the copper layer is thicker, so the minimum line width of wet etching is generally greater than 150μm
Semiconductor silicon has the advantages of high thermal conductivity, small thermal mismatch with LED chip materials, and mature processing technology. It is very suitable as a heat dissipa

Method used

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  • Integrated manufacturing method of silicon base plate and copper micro heat pipe of LED (light emitting diode) apparatus
  • Integrated manufacturing method of silicon base plate and copper micro heat pipe of LED (light emitting diode) apparatus

Examples

Experimental program
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Effect test

Embodiment 1

[0015] First, a copper seed layer 3 with a thickness of 150 nm is obtained on the back surface of the silicon substrate 4 by sputtering. Then, spin-coat SU-8 glue 6. When the model of SU-8 glue 6 is 2075, pre-coat with a glue homogenizer at a speed of 500rpm for 15s, and then spin-coat at a speed of 2000rpm for 45s to obtain a glue thickness of 100μm. Pre-bake the SU-8 glue at 85°C for 90 minutes, bake the SU-8 glue at 85°C for 5 minutes after photolithography on a photolithography machine, and then develop it to obtain the SU-8 glue electroforming mold 7.

[0016] In the electroforming machine, electroform copper on the SU-8 glue electroforming mold 6 until it is consistent with the thickness of the glue layer of the mold and stop, remove the SU-8 glue in the degumming solution of the SU-8 glue, and obtain Copper microstructure2. Cut a piece of pure copper plate 1 of the same size as the silicon substrate on a 0.5 mm thick pure copper plate, and use mechanical processing met...

Embodiment 2

[0018] First, a copper seed layer 3 with a thickness of 200 nm is obtained on the back surface of the silicon substrate 4 by sputtering. Then, spin coat SU-8 glue6. When the model of SU-8 glue 6 is 3100, pre-coat with a glue leveler at a speed of 500rpm for 15s, and then spin coat at a speed of 1000rpm for 45s to obtain a glue thickness of 250μm. Pre-bake the SU-8 glue at 85°C for 150 minutes, bake the SU-8 glue at 85°C for 15 minutes after photolithography on a photolithography machine, and then develop it to obtain the SU-8 glue electroforming mold 7.

[0019] In the electroforming machine, electroform copper on the SU-8 glue electroforming mold 6 until it is consistent with the thickness of the glue layer of the mold and stop, remove the SU-8 glue in the degumming solution of the SU-8 glue, and obtain Copper microstructure2. Cut a piece of pure copper plate 1 of the same size as the silicon substrate on a 0.5 mm thick pure copper plate, and use mechanical processing metho...

Embodiment 3

[0021] First, a copper seed layer 3 with a thickness of 200 nm is obtained on the back surface of the silicon substrate 4 by sputtering. Then, spin coat SU-8 glue6. When the model of SU-8 glue 6 is 3100, pre-coat at 500rpm for 15s, then spin coat at 800rpm for 45s to obtain a glue thickness of 300μm. Pre-bake the SU-8 glue at 85°C for 200 minutes, and after photolithography on the photolithography machine, bake the SU-8 glue at 85°C for 30 minutes before developing to obtain the SU-8 glue electroforming mold 7.

[0022] In the electroforming machine, electroform copper on the SU-8 glue electroforming mold 6 until it is consistent with the thickness of the glue layer of the mold and stop, remove the SU-8 glue in the degumming solution of the SU-8 glue, and obtain Copper microstructure2. Cut a piece of pure copper plate 1 of the same size as the silicon substrate on a 0.5 mm thick pure copper plate, and use mechanical processing methods, such as drilling, to obtain heat pipe w...

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Abstract

The invention discloses an integrated manufacturing method of a silicon base plate and a copper micro heat pipe of an LED (light emitting diode) apparatus for radiation of the LED apparatus. The method comprises the steps of: sputtering a copper seed layer with thickness within 50-300nm on the back of the silicon base plate; coating a 100-900micron thick photoresist on the copper seed layer; photoetching to obtain an electroforming mould and electroforming copper till the needed thickness is obtained; removing the photoresist and obtaining a copper microstructure on the silicon base plate; cutting a pure copper plate to obtain another pure copper sheet in same size; and obtaining a medium pouring hole by a mechanical machining method; bonding the pure copper sheet with the silicon base plate with a copper micro-channel; pouring the medium; and obtaining the silicon base plate integrated with the copper micro heat pipe. According to the method, no interface is available between the copper micro heat pipe and the silicon base plate, so that no interface heat resistor with large heat resistance is not available. The whole heat resistance of the apparatus is small, and the integrated apparatus is stable in heat transfer, the reliability is improved and service life of the apparatus is prolonged.

Description

technical field [0001] The invention belongs to the field of LED device packaging and heat dissipation, and relates to an integrated manufacturing method of a silicon substrate and a copper micro heat pipe of an LED device, which is applied to the heat dissipation of the LED device. Background technique [0002] LED is called the fourth-generation lighting source. It has the characteristics of energy saving, environmental protection, long life, and small size. It can be widely used in various indications, displays, decorations, backlights, general lighting, and urban night scenes. In recent years, some economically developed countries in the world have launched a fierce technical competition around the development of LEDs, among which LED heat dissipation is an urgent problem to be solved. Research data shows that if the junction temperature of the LED chip is 25°C, the luminescence is 100%; then when the junction temperature rises to 60°C, its luminescence is only 90%; when...

Claims

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Application Information

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IPC IPC(8): H01L33/48H01L33/64H01L33/00
Inventor 罗怡王晓东刘刚邹靓靓王立鼎
Owner DALIAN UNIV OF TECH
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