Integrated manufacturing method of silicon base plate and copper micro heat pipe of LED (light emitting diode) apparatus

Abstract

The invention discloses an integrated manufacturing method of a silicon base plate and a copper micro heat pipe of an LED (light emitting diode) apparatus for radiation of the LED apparatus. The method comprises the steps of: sputtering a copper seed layer with thickness within 50-300nm on the back of the silicon base plate; coating a 100-900micron thick photoresist on the copper seed layer; photoetching to obtain an electroforming mould and electroforming copper till the needed thickness is obtained; removing the photoresist and obtaining a copper microstructure on the silicon base plate; cutting a pure copper plate to obtain another pure copper sheet in same size; and obtaining a medium pouring hole by a mechanical machining method; bonding the pure copper sheet with the silicon base plate with a copper micro-channel; pouring the medium; and obtaining the silicon base plate integrated with the copper micro heat pipe. According to the method, no interface is available between the copper micro heat pipe and the silicon base plate, so that no interface heat resistor with large heat resistance is not available. The whole heat resistance of the apparatus is small, and the integrated apparatus is stable in heat transfer, the reliability is improved and service life of the apparatus is prolonged.

Description

technical field [0001] The invention belongs to the field of LED device packaging and heat dissipation, and relates to an integrated manufacturing method of a silicon substrate and a copper micro heat pipe of an LED device, which is applied to the heat dissipation of the LED device. Background technique [0002] LED is called the fourth-generation lighting source. It has the characteristics of energy saving, environmental protection, long life, and small size. It can be widely used in various indications, displays, decorations, backlights, general lighting, and urban night scenes. In recent years, some economically developed countries in the world have launched a fierce technical competition around the development of LEDs, among which LED heat dissipation is an urgent problem to be solved. Research data shows that if the junction temperature of the LED chip is 25°C, the luminescence is 100%; then when the junction temperature rises to 60°C, its luminescence is only 90%; when...

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Problems solved by technology

However, the copper layer is thicker, so the minimum line width of wet etching is generally greater than 150μm

Semiconductor silicon has the advantages of high thermal conductivity, small thermal mismatch with LED chip materials, and mature processing technology. It is very suitable as a heat dissipation substrate for high-power LEDs. It is a commonly used material in the design and development of new high-power LED device substrates in recent years. , but because traditional LEDs use sapphire or gallium nitride materials as substrates, this technology is still in the laboratory research stage

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