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Method for preparing fluorine-doped tin oxide thin film

A technology of fluorine-doped tin oxide and tin dioxide, which is applied in the direction of ion implantation plating, metal material coating process, coating, etc., can solve the problems of poor controllability, achieve low production cost, simple preparation method, and improve splashing The effect of ejaculation

Inactive Publication Date: 2012-12-26
PANZHIHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Powder targets have higher sputtering activity than ceramic targets, but are less controllable

Method used

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Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0029]The preparation method of the fluorine-doped tin oxide film of the present invention comprises the following steps:

[0030] a. Mix tin dioxide powder and fluoride evenly, then dry;

[0031] b. Use the dried mixture in step a to prepare a powder target, and then install it on the radio frequency target of the sputtering apparatus; clean and dry the base material and install it on the sample position of the vacuum chamber of the sputtering apparatus;

[0032] c. Start the sputtering process to prepare a fluorine-doped tin oxide film.

[0033] The powder target is to fill the powder mixture dried in step a into the cylindrical hole of the target tray, the top surface of the powder is slightly higher than the edge of the target tray, flatten the top surface of the powder with a flat plate, and clean up the excess powder on the edge , that is, the powder target.

[0034] Preferably, the drying temperature in step a of the above method is 50-300°C. The tin dioxide powder a...

Embodiment 1

[0045] Mix tin dioxide powder and ammonium fluoride crystals evenly with F1.8%, dry at 150°C for 2 hours, then fill in the target holder and flatten it, and install it on the radio frequency target of the magnetron sputtering machine Above, set the target distance to 30mm, start the sputtering apparatus to vacuumize, adjust the argon gas supply pressure to 0.5Mpa, the pressure in the vacuum chamber to 2.5Pa argon, the sputtering power to 130W, the pre-sputtering for 0.5h, and the formal sputtering for 25min. Shut down and release the pressure, take out the sample and let it stand in the air for 30min. The light transmittance of the film was measured to be 38.4%, the surface square resistance was 110Ω / □, and the FTC value was 3.4909.

Embodiment 2

[0047] Mix tin dioxide powder and ammonium fluoride crystals evenly with F1.8%, dry at 200°C for 2 hours, then fill in the target holder and flatten it, and install it on the radio frequency target of the magnetron sputtering machine Above, set the target distance to 33mm, start the sputtering apparatus to vacuumize, adjust the argon gas supply pressure to 2.5Mpa, the argon gas pressure in the vacuum chamber to 4.0Pa, the sputtering power to 130W, the pre-sputtering for 0.5h, and the actual sputtering time for 20min. Shut down and release the pressure, take out the sample and let it stand in the air for 30min. The light transmittance of the film was measured to be 53.7%, the surface square resistance was 280Ω / □, and the FTC value was 1.9179.

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Abstract

The invention discloses a method for preparing a fluorine-doped tin oxide thin film, which is low in cost and simple in process, and utilizes a radio frequency magnetron sputtering technology. The method comprises the following steps of: a, uniformly mixing tin oxide powder and fluoride, and drying; b, preparing a powder target by using the dried mixture obtained in the step a, installing on a radio frequency target of a sputtering instrument, cleaning and drying a substrate material, and then installing at a sample position of a vacuum chamber of the sputtering instrument; and c, starting a sputtering process, and thus preparing the fluorine-doped tin oxide thin film. The method is simple, the production cost is low, and the fluorine-doped tin oxide (FTO) thin film also has high transmitting and electric conduction performance, is high in comprehensive index FTC value, and has good application prospect.

Description

technical field [0001] The invention relates to a method for preparing a fluorine-doped tin oxide (FTO) film, in particular to a method for preparing a fluorine-doped tin oxide film by using radio frequency magnetron sputtering technology with lower cost and simpler process. Background technique [0002] FTO transparent conductive glass has excellent photoelectric properties, and is widely used in solar cell window materials, low-loss optical waveguide materials, various displays and amorphous silicon solar cells as transparent glass electrodes, etc., and is closely related to life. [0003] Application on thin-film solar cells: Solar cells are photoelectric devices that directly convert solar radiation energy into electrical energy at the semiconductor p-n junction by using the photovoltaic effect. TCO thin film is one of the key materials of solar cells, and it can be used as transparent electrodes for dye-sensitized solar cells (DSCS), etc. The requirements for it are: lo...

Claims

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Application Information

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IPC IPC(8): C23C14/08C23C14/35
Inventor 蓝德均崔旭梅黄双华邹敏陈孝娥
Owner PANZHIHUA UNIV